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    PSMN4

    Abstract: No abstract text available
    Text: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,


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    PDF PSMN4R6-100XS O220F OT186A) PSMN4

    Untitled

    Abstract: No abstract text available
    Text: BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.


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    PDF BUK762R0-40C BUK762R0-40C 771-BUK762R0-40C

    771-BUK7215-55A118

    Abstract: No abstract text available
    Text: DP AK BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    PDF BUK7215-55A 771-BUK7215-55A118 BUK7215-55A

    MBK10

    Abstract: No abstract text available
    Text: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.


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    PDF PSMN015-100P/100B OT404 771-PSMN015-100P PSMN015-100P MBK10

    PMV213SN

    Abstract: PMV213
    Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.


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    PDF PMV213SN M3D088 PMV213SN MBB076 MSB003 771-PMV213SN215 PMV213

    BSS138PW

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
    Text: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using


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    PDF BSS138PW OT323 SC-70) AEC-Q101 771-BSS138PW115 BSS138PW TRANSISTOR SMD CODE PACKAGE SOT323

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


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    PDF PSMN3R0-30YLD LFPAK56 LFPAK56

    PHB66NQ03LT

    Abstract: PHD66NQ03LT
    Text: PHB66NQ03LT N-channel TrenchMOS logic level FET Rev. 07 — 30 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PHB66NQ03LT PHB66NQ03LT PHD66NQ03LT

    BUK9Y14-40B

    Abstract: No abstract text available
    Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This


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    PDF BUK9Y14-40B BUK9Y14-40B

    2N7002F

    Abstract: 2N7002F_2
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


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    PDF 2N7002F mbb076 2N7002F 2N7002F_2

    JESD625-A

    Abstract: PMZ760SN SC-101
    Text: PMZ760SN N-channel TrenchMOS standard level FET Rev. 02 — 12 July 2007 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features


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    PDF PMZ760SN PMZ760SN JESD625-A SC-101

    BUK75

    Abstract: BUK754R3-75C BUK7E4R3-75C
    Text: BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.


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    PDF BUK754R3-75C; BUK7E4R3-75C 7E4R3-75C BUK75 BUK754R3-75C BUK7E4R3-75C

    55A4

    Abstract: BUK98150-55A SC-73
    Text: BUK98150-55A N-channel TrenchMOS logic level FET Rev. 04 — 11 June 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.


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    PDF BUK98150-55A BUK98150-55A 55A4 SC-73

    PHU97NQ03LT

    Abstract: No abstract text available
    Text: PHU97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.


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    PDF PHU97NQ03LT PHU97NQ03LT

    PH3120L

    Abstract: 10S100
    Text: PH3120L N-channel TrenchMOS logic level FET Rev. 03 — 30 March 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PH3120L PH3120L 10S100

    PHP75NQ08T

    Abstract: No abstract text available
    Text: PHP75NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PHP75NQ08T PHP75NQ08T

    BUK75

    Abstract: BUK753R4-30B BUK763R4-30B
    Text: BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 — 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS technology.


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    PDF BUK753R4-30B; BUK763R4-30B BUK75 BUK753R4-30B BUK763R4-30B

    buk9520-100b

    Abstract: c774
    Text: BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    PDF BUK9520-100B AEC-Q101 buk9520-100b c774

    Untitled

    Abstract: No abstract text available
    Text: BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been designed


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    PDF BUK725R0-40C BUK725R0-40C

    PSMN8R0-40PS

    Abstract: No abstract text available
    Text: PSMN8R0-40PS N-channel 40 V 7.6 mΩ standard level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


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    PDF PSMN8R0-40PS PSMN8R0-40PS

    BUK9620-100B

    Abstract: c778 c776 BUK9620 10S100
    Text: BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    PDF BUK9620-100B AEC-Q101 BUK9620-100B c778 c776 BUK9620 10S100

    BUK7Y13-40B

    Abstract: automotive abs 10S100
    Text: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This


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    PDF BUK7Y13-40B BUK7Y13-40B automotive abs 10S100

    BUK7608-40B_4

    Abstract: BUK75 BUK7608-40B
    Text: BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 — 24 September 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    PDF BUK7608-40B BUK7608-40B_4 BUK75 BUK7608-40B

    BUK7880-55A

    Abstract: SC-73
    Text: BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 — 1 November 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.


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    PDF BUK7880-55A BUK7880-55A SC-73