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    MGF1303 Search Results

    MGF1303 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGF1303 Mitsubishi LOW NOISE GaAs FET Scan PDF
    MGF1303 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGF1303 Unknown FET Data Book Scan PDF
    MGF1303B Mitsubishi LOW NOISE GaAs FET Original PDF
    MGF1303B Mitsubishi Low Noise GaAs FET Scan PDF
    MGF1303B Mitsubishi LOW NOISE GaAs FET Scan PDF

    MGF1303 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MGF1303 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)80m P(D) Max. (W)200m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20m


    Original     		PDF MGF1303

    MGF1303B

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1303B LOW NOISE GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGF1303B MGF1303B

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    FN1016

    Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
    Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773


    Original     		PDF 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016

    BUZ90af

    Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
    Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198


    Original     		PDF O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"

    Q631

    Abstract: NOV-97 682 FET
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1303B LOW NOISE GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel 4 M IN . Schottky gate is designed fo r use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF1303B MGF1303B Q631 NOV-97 682 FET

    MGF1403

    Abstract: 3B14-03 b1403 MGFC1403 I-3-40 MGF1903 1303B
    Text: Die_ MGFC1403 Package MGF1303B A m itsu b ish i MGF1903B ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES Devices in this family are constructed using the MGFC1403 die. These devices are N-channel Schottky gate type and are suitable for use in amplifier and oscillator applications.


    OCR Scan     		PDF MGFC1403 MGF1303B/1403/1903B MGF1903B MGF1303B MGF1903B MGF1403 3B14-03 b1403 I-3-40 MGF1903 1303B

    251C

    Abstract: MGF1303B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1303B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel 4 M IN . 1.85 + 0.2 4 M IN . 0 .1 5 7 M IN . (0.0 7 3'± 0 .0 0 8) (0 .1 5 7 M IN .) Schottky gate is designed for use in S to Ku band ampli­


    OCR Scan     		PDF MGF1303B MGF1303B 12GHz 251C

    M5M27C102

    Abstract: M5M27C102P MGF1303B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1303B LOW NOISE GaAs F E T DESCRIPTION O U TLIN E DRAWING The MGF1303B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1303B MGF1303B M5M27C102P RV-15 1048576-BIT 65536-W0RD 16-BIT) T-46-13-25 M5M27C102

    MGF1200

    Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.


    OCR Scan     		PDF MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan     		PDF MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A

    mgf1908

    Abstract: MGF1908A MGF1303B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1908A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and


    OCR Scan     		PDF MGF1908A MGF1908A MGF1303B. 12GHz mgf1908 MGF1303B

    MGF1202

    Abstract: MG15G1AM1 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E MG15C4HM1 MG15D4GM1
    Text: - 150 - * m MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 MG15G4GM1 MGX5G6EM1 ffl % M2 M2 M2 M2 M2 M2 M2 & m ÎS + 11/ . \ V* K V X E# * » j£ Vg s * X * * (V) X P d /P c h (A) * * (W) (min) (max) Vd s (V) (V) (V) gm (min) (typ) V d s (S) (V) (S)


    OCR Scan     		PDF MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 450220AB) MG30N10E 05typ O-220AB) MG30N06EL MGF1202 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E

    F-1303

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> i M G F1303Bj I f LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 3 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed fo r use in S to Ku band am pli­ fiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF F1303Bj F-1303