MGF1402B
Abstract: MGF1402
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC
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MGF1402B
MGF1402B
MGF1402
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MGF1404
Abstract: No abstract text available
Text: MGF1404-61-16 Transistors P-Channel UHF/Microwave MOSFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)80m P(D) Max. (W)200m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20m
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MGF1404-61-16
MGF1404
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MGF1451A
Abstract: No abstract text available
Text: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1451A Low Noise MES FET DESCRIPTION Outline Drawing The MGF1451A is designed for use in S to Ku band power amplifiers. FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION S to Ku band power Amplifiers
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MGF1451A
MGF1451A
13dBm
12GHz
Decl/2006
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MGF1403B
Abstract: GaAs FET
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET MITSUBISHI ELECTRIC
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MGF1403B
MGF1403B
GaAs FET
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ku Band Power GaAs FET
Abstract: No abstract text available
Text: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1451A Microwave Power GaAs FET DESCRIPTION Outline Drawing The MGF1451A is designed for use in S to Ku band power amplifiers. FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION
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MGF1451A
MGF1451A
13dBm
12GHz
Decl/2006
ku Band Power GaAs FET
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gaas fet micro-X Package marking
Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
Text: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers
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MGF1451A
MGF1451A
13dBm
12GHz
gaas fet micro-X Package marking
gaas fet micro-X Package
gaas fet marking
gaas fet micro-X
micro-X ceramic Package
marking 133 micro-x
133 marking Micro-X
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 3 B low -rtoise GaAs FET w ith an N-channel S ch o ttky gate is designed fo r use in S to Ku band am pli fiers. The herm etically sealed m etal-ceram ic package as
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MGF1403B
MGF1403B
Ta-251S
12GHz
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0619
Abstract: g720
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li U n it m i l l i m e t e r s i .r ic h e s t
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MGF1423B
157MIN
12GHz
10rcA
0619
g720
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MGF1502
Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
Text: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A
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MGF1403
MGF1404
MGF1405
MGF1412
MGF1413
12GHz
MGF2117
35MHz
MGF2124
MGF1502
MGF1601
mgf2116
MGF1802
MGF2124
MGF1902
MGF1501
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MGF1412
Abstract: MGF1412-11-09 MGFC1412 79S12
Text: ^M ITSUBISHI Die_ MGFC1412 Package MGF1412 ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFC1412 and MGF1412 are low noise GaAs FETs with a N-channel Schottky gare and are designed for use in low noise amplifiers. The MGF1412 features a hermetically sealed
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MGFC1412
MGF1412
MGF1412
200jim
MGFC1412-T01
MGF1412-11-09
79S12
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MGF1423B
Abstract: fet sm 367 KU 612 614 104 133 21 D094 MGF1423
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION T he M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -chann el S ch o ttky gate, is designed fo r use in S to Ku band am pli fiers. FEATURES • High linear power gain • High o utp ut power at 1 dB gain compression
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MGF1423B
MGF1423B,
13dBm
157MIN.
12GHz
MGF1423B
fet sm 367
KU 612
614 104 133 21
D094
MGF1423
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MGF1403
Abstract: 2SK276
Text: MITSUBISHI {DISCRETE S O TL T|,E4‘ÌAEe] 001G043 S T ~ m MITSUBISHI SEMICONDUCTOR <GaAs FET> _ ; 6249829 MITSUBISHI MGF1403 2SK276 ( D I S C R E T E SC) 91D 10043 D T-BM5 FOR M IC R O W A VE LO W -NO ISE A M P L IF IE R S N-CHANNEL SCHOTTKY BARR IER GATE T Y P E
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001G043
MGF1403
2SK276)
MGF1403
2SK276
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MGF1425
Abstract: No abstract text available
Text: MITSUBISHI {DISCRETE SC> TÏ 0^1^54^,32^ 00100L0 B 1~ MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 249 82 9 MITSUBISHI DISCRETE SC I : MGF1425 91 D 10060 DT-31'35 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The M G F1425
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00100L0
MGF1425
DT-31
F1425
MGF1425
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MGF1425
Abstract: MGFC1423 MGF1425-61-16 MGF1423 MGFC1425 mitsubishi application mg series gaas MGF-C MGF1923-01
Text: A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION The MGF1423/1425 series devices are low noise GaAs FETs wtih N-channel schottky gates. These devices are suitable for a wide range of amplifier and oscillator applications in S to Ku-band. In die form, the devices are
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MGF1423/1425
MGF1323
MGF1923
MGFC1423,
MGFC1425
MGF1323,
MGF1423,
MGF1425,
MGF1923
MGF1425
MGFC1423
MGF1425-61-16
MGF1423
mitsubishi application mg series gaas
MGF-C
MGF1923-01
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fet K 793
Abstract: MGF1402 cdb 838 S22VS MGF1402B Q017 91 569 775 -35 S 30ria
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> • b24tlfl2ti 0017040 b47 ■ MGF1402B LOW NOISE GaAs FET DESCRIPTION OU TLINE DRAWING The MGF1402B low-noise GaAs FET w ith an N-channel Schottky gate is designed fo r use in S to X band ampli fiers and oscillators. The hermetically sealed metalceramic
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b241fl2tÃ
MGF1402B
12GHz
MGF1402B
157MIN.
fet K 793
MGF1402
cdb 838
S22VS
Q017
91 569 775 -35 S
30ria
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mgf1903b
Abstract: MGF1403B MGF1402
Text: LOW NOISE GaAs FET M G F Ix x x x Series Typical Characteristics Type Froq. GHe NFmin. (dB| M V 11M MOF1302 MSF1303B M8F1323 MGF1402B MGF1412B MGF1403B MQF1423B MBF142SB MGF19028 MGF1903B MOF1923 4 4 12 12 12 12 12 12 12 12 12 12 1.4 1.2 1.8 101*1) <*1): P i dB(dBm)
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MOF1302
MSF1303B
M8F1323
MGF1402B
MGF1412B
MGF1403B
MQF1423B
MBF142SB
MGF19028
MGF1903B
MGF1402
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MGF1402
Abstract: 2SK274 MGF1402 -01
Text: MITSUBISHI {DISCRETE SC> TI DE IbaMTflET 0010033 2 MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 249 82 9 MITSUBISHI MGF1402 2SK274 (DISCRETE SC) D T -a -zs 9 1 D 10033 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTIONS The M G F1402
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MGF1402
2SK274)
F1402
MGF1402
2SK274
MGF1402 -01
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0g18
Abstract: 0G66
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band am pli fiers. The hermetically sealed metal-ceram ic package as
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MGF1403B
MGF1403B
F1403B
12GHz
0g18
0G66
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to X band ampli fiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a
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MGF1402B
12GHz
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mgf*1412
Abstract: MGF1412 MGF1412B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1412B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli fiers. The hermetically sealed metal-ceramic package as sures minimum parasitic losses, and has a configuration
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MGF1412B
MGF1412B
12GHz
mgf*1412
MGF1412
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cha 0438
Abstract: No abstract text available
Text: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 2 B low-rtoise GaAs FET w ith an N -ch an nel S ch o ttk y g ate is designed fo r use in S to X band am pli fiers and oscillators. Th e herm etically sealed m etalceram ic
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MGF1402B
MGF1402B
cha 0438
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z
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176SC
MGF1425B
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MGF1403B
Abstract: GSO 69 fet K 727
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E SC R IP T IO N T h e M G F 1 4 0 3 B lo w -n o is e G aAs FET w ith an N -c h a n n e l S c h o ttk y g ate is designed fo r use in S to Ku ban d a m p li fiers. T h e h erm etically sealed m e ta l-c e ra m ic p ac k a g e as
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MGF1403B
MGF1403B
157MIN.
12GHz
GSO 69
fet K 727
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel O U TLIN E DRAW ING Unit: m illim eters inches 4 M ÍN . (0 .1 5 7 M IN . ) 4 M IN . ( 0 .1 5 7 M IN .) S cho ttky gate is designed fo r use in Ku band am plifiers.
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MGF1425B
MGF1425B
GF1425B
12GHz
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