Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGF1100 Search Results

    MGF1100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGF1100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MGF1100 Unknown FET Data Book Scan PDF

    MGF1100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MGF1100 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)60m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)60m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.10m


    Original     		PDF MGF1100

    3SK242

    Abstract: MGF1100 3SK246 3SK243 3SK244 tv tuner 3SK245 470M M91F gaas fet vhf uhf
    Text: - 184 - f € m £ tt € m & m & * 1 * K # X fê Æ: S r- V m * à (V) * * * (A) P d/ P c h (W> Igss (max) (A) Vg s (V) fô & fê V pi (min) (max) V g 2S (max) (V) (A) (A) (V) te ìf (Ta=25'C) Vp2 (max) (V) gm (min) (typ) V d s (S) 1 (si (V) Vg i s (V)


    OCR Scan     		PDF 3SK242 3SK243 3SK244 3SK245 3SK246 15dBmin/17dBtyp 900MHz 3SK244 20dBmin/23dBtyp MGF1100 tv tuner 470M M91F gaas fet vhf uhf

    MGF1200

    Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.


    OCR Scan     		PDF MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A

    MGF1100

    Abstract: GF1100 Gf-1100 mgf11 dual-gate N-Channel, Dual-Gate FET
    Text: MITSUBISHI {DISCRETE SC> "TI DE IbEMTfla11! □□10007 MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 2 4 98 29 MITSUBISHI DISCRETE SC 9 ID 10007 D 1-31-2S M GF1100 FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TY P E DESCRIPTION The M G F 1 1 0 0 is designed fo r use in the 500 M H z to 4 G H z


    OCR Scan     		PDF 1-31-2S GF1100 MGF1100 GF1100 Gf-1100 mgf11 dual-gate N-Channel, Dual-Gate FET