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    6N60 Search Results

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    STMicroelectronics STB6N60M2

    MOSFET N-CH 600V 4.5A D2PAK
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    DigiKey STB6N60M2 Digi-Reel 9,889 1
    • 1 $2.16
    • 10 $1.383
    • 100 $0.9379
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    STB6N60M2 Cut Tape 9,889 1
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    STB6N60M2 Reel 9,000 1,000
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    Newark STB6N60M2 Cut Tape 1,289 1
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    STMicroelectronics STB6N60M2 1
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    ComSIT USA STB6N60M2 1,000
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    Chip One Stop STB6N60M2 Cut Tape 1,970 0 Weeks, 1 Days 1
    • 1 $0.551
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    EBV Elektronik STB6N60M2 15 Weeks 1,000
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    STMicroelectronics STD16N60M6

    MOSFET N-CH 600V 12A DPAK
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    DigiKey STD16N60M6 Cut Tape 2,262 1
    • 1 $2.16
    • 10 $1.601
    • 100 $1.1424
    • 1000 $0.89804
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    STD16N60M6 Digi-Reel 2,262 1
    • 1 $2.16
    • 10 $1.601
    • 100 $1.1424
    • 1000 $0.89804
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    EBV Elektronik STD16N60M6 15 Weeks 2,500
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    Vishay Siliconix IRFP26N60LPBF

    MOSFET N-CH 600V 26A TO247-3
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    DigiKey IRFP26N60LPBF Tube 1,354 1
    • 1 $10.65
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    • 100 $5.4965
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    onsemi FCA76N60N

    MOSFET N-CH 600V 76A TO3PN
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    DigiKey FCA76N60N Tube 1,348 1
    • 1 $19.19
    • 10 $19.19
    • 100 $12.71367
    • 1000 $12.50617
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    Ameya Holding Limited FCA76N60N 16,670
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    STMicroelectronics STF26N60M2

    MOSFET N-CH 600V 20A TO220FP
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    DigiKey STF26N60M2 Tube 894 1
    • 1 $3.57
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    • 100 $1.6265
    • 1000 $1.22959
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    Avnet Americas STF26N60M2 Tube 14 Weeks 1,000
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    • 10000 $1.15913
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    STMicroelectronics STF26N60M2 1
    • 1 $3.39
    • 10 $1.76
    • 100 $1.6
    • 1000 $1.3
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    ComSIT USA STF26N60M2 50
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    Avnet Silica STF26N60M2 600 15 Weeks 50
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    EBV Elektronik STF26N60M2 15 Weeks 50
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    Find more 6N60 price and stock on Findchips.com

    6N60 Datasheets (7)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    6N60 Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    6N-60 Inmet ATTENUATOR Scan PDF
    6N-60 TXC 7 x 5 mm SMD Seam Cxo Tyoe / 6N Series Scan PDF
    6N60-ATA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    6N-60F Inmet ATTENUATOR Scan PDF
    6N60L-ATA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    6N60L-BTA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF

    6N60 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		QW-R502-117 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 „ DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		O-220F O-220 O-220F1 O-220F2 O-252 O-251 QW-R502-117 PDF

    6N-60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		6N60L QW-R502-117 6N-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60Z Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		6N60Z 6N60Z QW-R502-741 PDF

    SSS6N60

    Abstract: ADE 443 TI MOSFET 6n60 6n60 K300 SSS6N55
    Text: N-CHANNEL POWER MOSFETS SSS6N55/6N60 FEATU RES • A • • 9 • • • TO-270* Low er Ros com* 1im ffMp ro /Nvo hiAo<4 a i •«eA ru rn••gAgAeAd n eAsAsA inMdrAu••c tiv F es! s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e il s tru c tu re


    OCR Scan     		SSS6N55/6N60 O-270* SSS6N5S6N60 SSS6N55 SSS6N60 SSSSN55 SSSSM60 Tc-25-C Tc-25 ADE 443 TI MOSFET 6n60 6n60 K300 PDF

    SGW6N60UF

    Abstract: No abstract text available
    Text: SGW 6N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 2.1 V (@ lc=3A) * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply


    OCR Scan     		SGW6N60UF SGW6N60UF PDF

    6N60

    Abstract: SSM6N55
    Text: _98D_0 5319 - 7964.142 SAMSUNG SEMICONDUCTOR INC. DE I TTtiM m E Q0QS3n 3 | ‘ ' . D _ 7 ~ -3 7 ^ / 2 N-CHANNEL PO WER MOSFETS SSM6N55/6N60 FEATURES Low Ros on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times


    OCR Scan     		SSM6N55/6N60 SSM6N55 SSM6N60 6N60 PDF

    6n55

    Abstract: power mosfet 6n60 TH6N55 6n55 data
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 6N 55 M T H 6 N 60 M TM 6N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		6N60-P O-220F O-220 6N60-P O-220F1 O-220F2 O-263 O-251 O-252 QW-R502-969 PDF

    6n60a

    Abstract: 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-220 O-251 O-220F O-220F1 QW-R502-117 6n60a 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251 PDF

    6n60a

    Abstract: 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6n60 equivalent 6N60L TO-220F MOSFET+6n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		6N60L 6N60G QW-R502-117 6n60a 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6n60 equivalent 6N60L TO-220F MOSFET+6n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		6N60K-MT 6N60K-MT QW-R205-021 PDF

    igbt 200V 4A

    Abstract: SGW6N60UFD 200v 1.5v 3a diode
    Text: SGW 6N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 2.1 V (@ lc=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		SGW6N60UFD igbt 200V 4A SGW6N60UFD 200v 1.5v 3a diode PDF

    SSP6N60

    Abstract: 6N60 MOSFET 6n60
    Text: N-CHANNEL POWER MOSFETS SSP6N55/6N60 FEATURES • Lower Ros • • • • • • ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		SSP6N55/6N60 SSP6N55 SSP6N60 SSP6N60 SSP6N55/60 6N60 MOSFET 6n60 PDF

    6N60Z

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60Z Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		6N60Z 6N60Z 6N60ZL-TF3-T 6N60ZG-TF3-T O-220F QW-R502-741 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		QW-R502-117. PDF

    6n60 data

    Abstract: UTC6N60 6N60L TO-220F
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-251 O-220 O-220F O-220F1 O-252 QW-R502-117 6n60 data UTC6N60 6N60L TO-220F PDF

    6n60c

    Abstract: mosfet 6n60c 6n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60-C Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and


    Original     		6N60-C 6N60-C 6N60L-TF3-T 6N60G-TF3-T O-220F QW-R502-A50 6n60c mosfet 6n60c 6n60 PDF

    6N60

    Abstract: ssp6n SSP6N60
    Text: SSP6N55/6N60 SSH6N55/6N60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		SSP6N55/6N60 SSH6N55/6N60 SSP6N55 SSH6N55 6N60 ssp6n SSP6N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		QW-R502-117. PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 6N60Z Power MOSFET 6 .2 A, 6 0 0 V N -CH AN N EL POWER M OSFET  DESCRI PT I ON The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		6N60Z 6N60Z 6N60ZL-TF3-Tat QW-R502-741 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		O-220F O-220 O-220F1 O-220F2 QW-R502-117 PDF

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original     		PDF

    6N60

    Abstract: 6n60 equivalent 6n60 data
    Text: E 6N60 VDSS=600V; ID=6.0A; RDS ON =1.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO­220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain­to­Source Breakdown Voltage


    Original     		100nA 6N60 6n60 equivalent 6n60 data PDF