2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond
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IXFR48N60P
18N60P
30N60P
22N60P
36N60P
26N60P
48N60P
PLUS220
IXTV22N50PS.
2n60p
gsm based speed control of single phase induction motor
thyristor family
48N60
600v 20 amp mosfet
14n60
300V HiPerFET power MOSFET single die MOSFET
Wireless A.C motor speed controlling system
IXYS SCR MODULE Gate Drive
15N60P
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36N50
Abstract: 36N50P ISOPLUS247
Text: PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C
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36N50P
12-06-05-C
36N50
36N50P
ISOPLUS247
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plus220smd
Abstract: 36N50P IXFH36N50P
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 = 500 V = 36 A Ω = 170 mΩ RDS on TO-247 AD (IXFH) (TAB) Symbol Test Conditions
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36N50P
36N50PS
O-247
405B2
IXFH36N50P
plus220smd
36N50P
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS = 500 ID25 = 19 RDS on ≤ 190 ≤ 200 trr IXFC 36N50P IXFR 36N50P (Electrically Isolated Back Surface) V A mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings
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36N50P
12-06-05-C
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123B16
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR
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36N50P
36N50P
PLUS220
O-268
O-247
405B2
IXFH36N50P
123B16
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P VDSS ID25 RDS on = 500 V = 36 A Ω = 170 mΩ N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR
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36N50P
36N50P
PLUS220
O-268
O-247
405B2
IXFH36N50P
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IXFH36N50P
Abstract: 36N50PS 36N50 36n50P PLUS220SMD
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS VDSS ID25 RDS on trr = 500 V = 36 A ≤ 170 mΩ Ω ≤ 200 ms TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings
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36N50P
36N50PS
O-247
IXFH36N50P
36N50P
PLUS220
36N50PS
36N50
PLUS220SMD
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36n50P
Abstract: PLUS220SMD V36N50P
Text: Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 IXTH 36N50P IXTT 36N50P IXTQ 36N50P IXTV 36N50P IXTV 36N50PS RDS on = 500 V = 36 A Ω = 170 mΩ TO-3P (IXTQ) Symbol Test Conditions
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36N50P
36N50PS
O-247
PLUS220
PLUS220SMD
36n50P
PLUS220SMD
V36N50P
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I 508 V
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 24 A ≤ 200 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol
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ISOPLUS247TM
36N50P
I 508 V
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36n50P
Abstract: ISOPLUS247
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS ID25 = = RDS on ≤ ≤ trr (Electrically Isolated Back Surface) 500 18 190 250 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol
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36N50P
36n50P
ISOPLUS247
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36n50P
Abstract: No abstract text available
Text: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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36N50P
36n50P
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36N50P
Abstract: IXTQ36N50P
Text: Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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36N50P
36N50P
IXTQ36N50P
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Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A Ω ≤ 170 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C
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36N50P
36N50PS
O-247
O-268
PLUS220
PLUS220SMD
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36n50P
Abstract: 36N50 IXTH36N50P 4515 n 36n50P equivalent QG SMD TRANS IXTV36N50P PLUS220SMD IXTQ36N50P FS25
Text: PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 500 V = 36 A ≤ 170 mΩ Ω TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C
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36N50P
36N50PS
O-247
O-268
PLUS220
PLUS220SMD
36n50P
36N50
IXTH36N50P
4515 n
36n50P equivalent
QG SMD TRANS
IXTV36N50P
PLUS220SMD
IXTQ36N50P
FS25
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BERULUB FR 16 B
Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power
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IXBH40N160,
BERULUB FR 16 B
circuit diagram of 5kw smps full bridge
thyristor aeg
UC3854 5kw
harmer simmons
BERULUB FR 16
Grease Berulub FR 16
Berulub FR 66
5kw smps pfc
ups PURE SINE WAVE schematic diagram
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BERULUB FR 16
Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
Text: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits
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ISOPLUS247
UC3854A
UC3854B
DN-44,
TDA4817
BERULUB FR 16
ixys vuo 52-16
ups PURE SINE WAVE schematic diagram
Vienna Rectifier
TL 82036
BERULUB FR 43
UC3858
schema inverter welding
veridul
BERULUB FR 16 B
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STW20N60
Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal
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O-220,
ISOPLUS220TM,
O-247,
ISOPLUS247TM,
O-264,
ISOPLUS264TM.
PLUS220
ISOPLUS220TM
PLUS220SMD
O-252
STW20N60
2n60p
IXFB100N50
IXFB100N50P
STW20N60FD
IXFB100N50P TO-264
ixys ixfn100n50p
IXFN48n60p
IXFH30N60P
ixfn100n50p
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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ixys ixtn 36n50
Abstract: 36N50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50
Text: IXYS_ MegaMOS FET IXTN 36N50 VDSS = 500 V U = 36A DS on — 12 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =2 5°C to 150°C 500 V V 0GR T j = 2 5 °C to 150°C; RGS= 10ki2 500 V Vos Continuous 120 V v GSM
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36N50
10ki2
OT-227
E153432
C2-46
36N50
ixys ixtn 36n50
IXTN 36N50 C
IXYS 36N50
ac motor forward reverse control
ixtn36n50
IXTN 36N50
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IXTN 36N50 C
Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20
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O-247
O-220
O-263
O-264
67N10
75N10
50N20
79N20
35N30
40N30
IXTN 36N50 C
ixys ixth 21N50
mosfet irfp 250 N
c226
C278
C2100
13N110
C258
IRFP
ixys ixtn 36n50
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11n80
Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088
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O-247
O-251
O-204
O-264
15N60
20N60
15N70
01N80*
35N30
40N30
11n80
ixys ixth 21N50
C2100
G264
2N100
ixth75n10
74N20
C2104
C294
13n80
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36N50
Abstract: IXYS 36N50 IXTN 36N50 C ixys ixtn 36n50 193H IXTN36N50
Text: MegaMOS FRED IXTN36N50 VDSS = 500 V •□25 = 3 6 A ^ D S o n = 0 -1 2 N-Channel Enhancement Mode Symbol Test Conditions v ¥ d ss Tj = 25°C to 150°C 500 V V och Tj = 25°C to 150°C; RGS = 10 k£2 500 V V GS Continuous +20 V v T ransient ±30 V 36
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IXTN36N50
OT-227
36N50
IXYS 36N50
IXTN 36N50 C
ixys ixtn 36n50
193H
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36N50
Abstract: IXTN 36N50 C N36N50 ixys ixtn 36n50 IXTN36N50
Text: MegaMOS FRED IXTN36N50 V DSS = 500 V lD26 = 36 A ^ D S o n = 0 -1 2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS Tj = 25°C to 150°C V Tj = 25°C to 150°C; RGS = 10 500 V 500 V Continuous +20 V T ransient ±30 V ^□25 Tc = 25°C
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IXTN36N50
OT-227
36N50
36N50
IXTN 36N50 C
N36N50
ixys ixtn 36n50
IXTN36N50
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