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    IXYS 16N50P Search Results

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    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


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    PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    16N50P

    Abstract: f16n50p
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 16N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 10 A ≤ 450 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR


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    PDF ISOPLUS220TM 16N50P 1-30-05-A 16N50P f16n50p

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    PDF 16N50P 16N50P O-220 O-263 405B2

    16N50P

    Abstract: IXYS 16N50P f16n50
    Text: PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFH 16N50P IXFP 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGS VGSM


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    PDF 16N50P O-220 O-263 O-247 O-220) 5J-745) 16N50P IXYS 16N50P f16n50

    16N50P

    Abstract: IXYS 16N50P IXTP IXTP IXTP IXTP IXYS DIODE
    Text: PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P = 500 V = 16 A ≤ 400 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500


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    PDF 16N50P 16N50P IXYS 16N50P IXTP IXTP IXTP IXTP IXYS DIODE

    16N50P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 16N50P VDSS ID25 RDS on trr = 500 V = 10 A Ω = 450 mΩ = 200 ns Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


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    PDF 16N50P 16N50P

    16N50p

    Abstract: IXYS 16N50P
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 16N50P O-220 O-263 16N50p IXYS 16N50P

    16N50P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500


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    PDF 16N50P O-220 O-263 O-247 16N50P

    16n50

    Abstract: 646V
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ = 200 ns RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


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    PDF 16N50P 16N50P O-220 O-263 O-247 16n50 646V

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2