Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
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80N50P
80N50P
O-264
PLUS247
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS Test Conditions TO-264 AA IXFK Maximum Ratings IXFK IXFN VDSS T J = 25°C to 150°C 500 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50 48N50
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O-264
44N50
48N50
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C
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80N50P
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48N50Q
Abstract: 44N50 48N50 44N50Q ixfx48n50q
Text: VDSS HiPerFETTM Power MOSFETs trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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48N50Q
44N50Q
247TM
728B1
48N50Q
44N50Q
44N50
48N50
ixfx48n50q
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50
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44N50
48N50
48N50
O-264
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80N50P
Abstract: IXFK 80N50P 80N50 PLUS247
Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM
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80N50P
80N50P
IXFK 80N50P
80N50
PLUS247
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48N50
Abstract: ixys ixfk 44n50 44N50 IXFK48N50
Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS T J = 25°C to 150°C 500 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50
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O-264
44N50
48N50
48N50
ixys ixfk 44n50
44N50
IXFK48N50
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50
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O-264
44N50
48N50
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80N50P
Abstract: IXFK 80N50P PLUS247
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
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80N50P
O-264
80N50P
IXFK 80N50P
PLUS247
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64N50P
Abstract: 64N50 PLUS247 ixfk64n50p IXFX64N50P
Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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64N50P
64N50P
64N50
PLUS247
ixfk64n50p
IXFX64N50P
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PDF
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66N50Q2
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFK 66N50Q2 IXFX 66N50Q2 Q-Class = = = 500 V 66 A Ω 80 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol Test Conditions
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66N50Q2
66N50Q2
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55n50
Abstract: ixys ixfn 55n50 IXFK50N50
Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings
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55N50
50N50
50N50
250ns
100mW
ixys ixfn 55n50
IXFK50N50
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IXFK50N50
Abstract: IXYs M ixys ixfn 55n50 125OC 50N50 IXFK55N50 IXFN50N50 IXFN55N50 55n50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on RMMs RMMs RMMs RMMs RR^ RM^ RR^ RM^ =UMãΩ NMMãΩ =UMãΩ NMMãΩ trr ORMåë ORMåë ORMåë ORMåë Preliminary data sheet Symbol Test Conditions
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55N50
50N50
O-264
125OC
IXFK50N50
IXYs M
ixys ixfn 55n50
125OC
50N50
IXFK55N50
IXFN50N50
IXFN55N50
55n50
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ixys ixfn 55n50
Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)
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55N50
50N50
250ns
O-264
ixys ixfn 55n50
50n50
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
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55N50
PLUS247
O-264
IXFX55N50
IXFN55N50
125OC
IXFK55N50/IXFX55N50
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MD 202
Abstract: IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions PLUS247 55n5
Text: IXFK 55N50 IXFX 55N50 IXFN 55N50 HiPerFETTM Power MOSFET VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
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55N50
PLUS247
O-264
IXFX55N50
IXFN55N50
125OC
IXFK55N50/IXFX55N50
MD 202
IXFX55N50
IXFK55N50
SOT-227B Outline
IXFN55N50
55N50
"SOT-227 B" dimensions
55n5
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Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr IXFK 180N15P IXFX 180N15P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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180N15P
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180n15p
Abstract: 180N15 PLUS247 IXFX180N15P
Text: PolarTM HiPerFET Power MOSFET IXFK 180N15P IXFX 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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180N15P
-55ombs
180n15p
180N15
PLUS247
IXFX180N15P
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V D trr DS on ^D25 55A 50A 55A 50A 85m£2 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol
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55N50
50N50
250ns
O-264
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings
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250ns
250ns
55N50
50N50
50N50
O-264
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PDF
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1XFN48N50
Abstract: No abstract text available
Text: □IXYS VDSS HiPerFET Power MOSFETs TO-264 AA IXFK Preliminary data Maximum Ratings IXFK IXFN Symbol Test Conditions v*DSS v DGR Tj = 25°C to 150°C 500 500 V Td = 25°C to 150°C; RGS = 1 M fi 500 500 V VGS v GSM Continuous ±20 ±20 V Transient ±30
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O-264
44N50
48N50
1XFN48N50
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52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70
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76N06-11
76N07-11
76N07-12
67N10
75N10
50N20
58N20
74N20
80N20
35N30
52N30
20n80
ixfh 60N60
IXFX 44N80
15n10
7n80
E51G
44N80
60n60
46N50
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C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268
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67N10
75N10
75N10Q
80N10Q
O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
C1218
C1222
ixfh 60N60
IXFX 44N80
C1138
C1238
20n80
C1228
C1172
IXFN 230N10 230N10
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IXfk 75 N 50
Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400
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76N06-11
76N06-12
76N07-11
76N07-12
67N10
75N10
42N20
50N20
50N20S
58N20
IXfk 75 N 50
15N80
50N-2
110N06 n
100N10
110N06
10n90
IXFH40N30
ixfk73n30
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