Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
80N50P
80N50P
O-264
PLUS247
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS Test Conditions TO-264 AA IXFK Maximum Ratings IXFK IXFN VDSS T J = 25°C to 150°C 500 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50 48N50
|
Original
|
PDF
|
O-264
44N50
48N50
|
Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C
|
Original
|
PDF
|
80N50P
|
48N50
Abstract: ixys ixfk 44n50 44N50 IXFK48N50
Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS T J = 25°C to 150°C 500 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50
|
Original
|
PDF
|
O-264
44N50
48N50
48N50
ixys ixfk 44n50
44N50
IXFK48N50
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50
|
Original
|
PDF
|
O-264
44N50
48N50
|
80N50P
Abstract: IXFK 80N50P PLUS247
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
80N50P
O-264
80N50P
IXFK 80N50P
PLUS247
|
64N50P
Abstract: 64N50 PLUS247 ixfk64n50p IXFX64N50P
Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
|
Original
|
PDF
|
64N50P
64N50P
64N50
PLUS247
ixfk64n50p
IXFX64N50P
|
ixys ixfn 55n50
Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)
|
Original
|
PDF
|
55N50
50N50
250ns
O-264
ixys ixfn 55n50
50n50
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C
|
Original
|
PDF
|
55N50
PLUS247
O-264
IXFX55N50
IXFN55N50
125OC
IXFK55N50/IXFX55N50
|
Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr IXFK 180N15P IXFX 180N15P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
|
Original
|
PDF
|
180N15P
|
IXFX 44N80P
Abstract: 44n8 max2743 IXFK44N80P
Text: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 800 800
|
Original
|
PDF
|
44N80P
44N80P
O-264
PLUS247
IXFX 44N80P
44n8
max2743
IXFK44N80P
|
180N15
Abstract: No abstract text available
Text: Advance Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ IXFK 180N15P N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100
|
Original
|
PDF
|
180N15P
O-264
180N15
|
140N20P
Abstract: IXYS SP
Text: Preliminary Technical Information PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on = 18 mΩ ≤ 150 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
|
Original
|
PDF
|
140N20P
405B2
140N20P
IXYS SP
|
Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS on ≤ 7.5 mΩ ≤ 150 ns trr IXFK 200N10P IXFX 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
|
Original
|
PDF
|
200N10P
O-264
|
|
|
IXFH120N20P
Abstract: No abstract text available
Text: Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 140 ns trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
120N20P
IXFH120N20P
|
PLUS247
Abstract: IXFX120N25P
Text: PolarHTTM HiPerFET Power MOSFET IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS on = trr < 250 V 120 A Ω 24 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 250
|
Original
|
PDF
|
120N25P
O-264
PLUS247
PLUS247
IXFX120N25P
|
IXFK180N15P
Abstract: No abstract text available
Text: Advance Technical Information PolarTM HiPerFET Power MOSFET IXFK 180N15P VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 150 150 V V VDSS VGSM
|
Original
|
PDF
|
180N15P
O-264
IXFK180N15P
|
5080S
Abstract: No abstract text available
Text: Advance Technical Information PolarHTTM HiPerFET Power MOSFET IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS on = trr < 250 V 120 A Ω 24 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
|
Original
|
PDF
|
120N25P
120N25P
O-264
PLUS247
5080S
|
E 150N10
Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXFK100N10
IXFN150N10
O-264
ID120
E 150N10
150N10
100N10
IXFK100N10
IXFN150N10
|
Untitled
Abstract: No abstract text available
Text: PolarHTTM HiPerFET IXFH 150N15P IXFK 150N15P Power MOSFET VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ
|
Original
|
PDF
|
150N15P
O-247
|
Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V D trr DS on ^D25 55A 50A 55A 50A 85m£2 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol
|
OCR Scan
|
PDF
|
55N50
50N50
250ns
O-264
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings
|
OCR Scan
|
PDF
|
250ns
250ns
55N50
50N50
50N50
O-264
|
Untitled
Abstract: No abstract text available
Text: V DSS HiPerFET Power MOSFETs p ^D25 IXFK 100 N 10 100 V IXFN 150 N 10 100 V 100 A 150 A DS on 12 mfl 12 mfì N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t^ TO-264 AA (IXFK) Symbol Test Conditions vVDSS v DGR T0 = 25°C to 150°C 100 100
|
OCR Scan
|
PDF
|
O-264
D-68623
100N10
150N10
4bflh25b
|
Untitled
Abstract: No abstract text available
Text: □ IXYS VDSS HiPerFET Power MOSFETs 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 ix f k N-Channel Enhancement Mode AvalancheRated, High dv/dt, Lowtrr 800 800 800 800 V V V V D ^D25 27 25 27 25 A A A A D S o n 0.30 0.35 0.30 0.35 Q Q Q Q TO -264A A (IX FK )
|
OCR Scan
|
PDF
|
27N80
25N80
-264A
|