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Littelfuse Inc IXFR64N50P MOSFET N-CH 500V 35A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR64N50P	Tube	30		1	1 $17.99 10 $17.99 100 $11.85567 1000 $17.99 10000 $17.99	Buy Now
Newark	IXFR64N50P	Bulk			300	1 - 10 - 100 - 1000 $12.1 10000 $12.1	Buy Now
RS	IXFR64N50P	Bulk		8 Weeks	30	1 - 10 - 100 $17.85 1000 $17.85 10000 $17.85	Get Quote
Littelfuse Inc IXFX64N50P MOSFET N-CH 500V 64A PLUS247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFX64N50P	Tube	2		1	1 $16.65 10 $16.65 100 $10.906 1000 $16.65 10000 $16.65	Buy Now
Newark	IXFX64N50P	Bulk			300	1 - 10 - 100 - 1000 $10.99 10000 $10.99	Buy Now
Littelfuse Inc IXFK64N50P MOSFET N-CH 500V 64A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK64N50P	Tube			300	1 - 10 - 100 - 1000 $10.06887 10000 $10.06887	Buy Now
RS	IXFK64N50P	Bulk		8 Weeks	25	1 - 10 - 100 $15.57 1000 $15.57 10000 $15.57	Get Quote
Littelfuse Inc IXFN64N50P MOSFET N-CH 500V 61A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN64N50P	Tube			1	1 $29.93 10 $21.951 100 $29.93 1000 $29.93 10000 $29.93	Buy Now
Newark	IXFN64N50P	Bulk			300	1 - 10 - 100 - 1000 $19.74 10000 $19.74	Buy Now
RS	IXFN64N50P	Bulk		8 Weeks	10	1 - 10 $29.13 100 $29.13 1000 $29.13 10000 $29.13	Get Quote
IXYS Corporation IXFN64N50PD2 MOSFET N-CH 500V 52A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN64N50PD2	Tube			10	1 - 10 $22.341 100 $22.341 1000 $22.341 10000 $22.341	Buy Now

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64N50P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sot 227b diode fast Abstract: SOT227B 64N50 64N50P IXFN64N50P sot 227b Text: PolarHVTM HiPerFET Power MOSFET IXFN 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 64 A ≤ 85 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	64N50P 405B2 sot 227b diode fast SOT227B 64N50 64N50P IXFN64N50P sot 227b	PDF
64N50 Abstract: fd 715 64N50P ISOPLUS247 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 64N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 43 A ≤ 100 mΩ Ω ≤ 200 ns (Electrically Isolated Back Surface) Symbol	Original	64N50P ISOPLUS247TM 64N50 fd 715 64N50P ISOPLUS247	PDF
64N50P Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFN 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode = = ≤ ≤ 500 V 64 A Ω 85 mΩ 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	64N50P OT-227 E153432 64N50P	PDF
diode m4 Abstract: 64N50 uc pfc NS2004 Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 64N50PD2 VDSS ID25 RDS on Boost Configuration for PFC Circuits trr 3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 52 A ≤ 85 m Ω ≤ 200 ns 4 2 1 Symbol	Original	64N50PD2 405B2 diode m4 64N50 uc pfc NS2004	PDF
64N50 Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 AA (IXTK) Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	64N50P 64N50P O-264 PLUS247 405B2 64N50	PDF
64N50P Abstract: 64N50 PLUS247 ixfk64n50p IXFX64N50P Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	64N50P 64N50P 64N50 PLUS247 ixfk64n50p IXFX64N50P	PDF
64N50 Abstract: 64n50p IXFX64N50P PLUS247 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 AA (IXFK) Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	64N50P O-264 64N50 64n50p IXFX64N50P PLUS247	PDF
64N50 Abstract: 64N50P ISOPLUS247 Text: PolarHVTM HiPerFET Power MOSFET IXFR 64N50P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 500 V = 35 A ≤ 95 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	64N50P ISOPLUS247TM 64N50 64N50P ISOPLUS247	PDF
"SOT-227 B" dimensions Abstract: SOT-227 Package 64N50P 64N50 BE 64A HiperFET SOT-227B Outline IXFN64N50P Text: PolarHVTM HiPerFET Power MOSFET VDSS = 500 V ID25 = 61 A RDS on ≤ 85 m Ω ≤ 200 ns trr IXFN 64N50P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	64N50P OT-227 E153432 "SOT-227 B" dimensions SOT-227 Package 64N50P 64N50 BE 64A HiperFET SOT-227B Outline IXFN64N50P	PDF
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF

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64N50P Price and Stock

Littelfuse Inc IXFR64N50P

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Littelfuse Inc IXFN64N50P

IXYS Corporation IXFN64N50PD2

64N50P Datasheets Context Search

sot 227b diode fast

64N50

64N50P

diode m4

64N50

64N50P

64N50

64N50

"SOT-227 B" dimensions

2n60p

7N60B equivalent

STW20N60