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    80N50P Search Results

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    80N50P Price and Stock

    Littelfuse Inc IXFN80N50P

    MOSFET N-CH 500V 66A SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN80N50P Tube 1,043 1
    • 1 $35.15
    • 10 $31.232
    • 100 $27.3165
    • 1000 $27.3165
    • 10000 $27.3165
    		Buy Now
    Newark IXFN80N50P Bulk 103 1
    • 1 $34.45
    • 10 $30.61
    • 100 $26.77
    • 1000 $26.77
    • 10000 $26.77
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    Littelfuse Inc IXFK80N50P

    MOSFET N-CH 500V 80A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK80N50P Tube 600 1
    • 1 $21.36
    • 10 $21.36
    • 100 $16.6018
    • 1000 $14.1669
    • 10000 $14.1669
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    Newark IXFK80N50P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $14.36
    • 10000 $14.36
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    Littelfuse Inc IXFX80N50P

    MOSFET N-CH 500V 80A PLUS247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFX80N50P Tube 1
    • 1 $22.03
    • 10 $22.03
    • 100 $18.262
    • 1000 $14.60967
    • 10000 $14.60967
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    Newark IXFX80N50P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $14.81
    • 10000 $14.81
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    Littelfuse Inc IXFR80N50P

    MOSFET N-CH 500V 45A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR80N50P Tube 1
    • 1 $23.77
    • 10 $23.77
    • 100 $19.70567
    • 1000 $15.76453
    • 10000 $15.76453
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    Newark IXFR80N50P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $15.98
    • 10000 $15.98
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    IXYS Corporation IXFX80N50P

    MOSFETs 500V 80A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFX80N50P 290
    • 1 $22.03
    • 10 $20.67
    • 100 $18.05
    • 1000 $14.61
    • 10000 $14.61
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    TTI IXFX80N50P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $14.49
    • 10000 $14.49
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    TME IXFX80N50P 1
    • 1 $25.03
    • 10 $19.89
    • 100 $17.93
    • 1000 $17.93
    • 10000 $17.93
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    Find more 80N50P price and stock on Findchips.com

    80N50P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80N50P

    Abstract: IXFK 80N50P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF 80N50P O-264 80N50P IXFK 80N50P PLUS247

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF 80N50P 80N50P O-264 PLUS247

    80n50

    Abstract: 80N50P ISOPLUS247 4525 GE alize
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C


    Original     		PDF ISOPLUS247TM 80N50P 80n50 80N50P ISOPLUS247 4525 GE alize

    80N50P

    Abstract: IXFN 80N50P E153432
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50P 80N50P IXFN 80N50P E153432

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous


    Original     		PDF 80N50P

    80N50

    Abstract: 80N50P IXFN 80N50P
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous


    Original     		PDF 80N50P 80N50 80N50P IXFN 80N50P

    80N50P

    Abstract: IXFK 80N50P 80N50 PLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM


    Original     		PDF 80N50P 80N50P IXFK 80N50P 80N50 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS247TM 80N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original     		PDF 80N50P

    80N50P

    Abstract: ISOPLUS247 PLUS247
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF ISOPLUS247TM 80N50P ISOPLUS247 E153432 405B2 80N50P ISOPLUS247 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50P OT-227 E153432 405B2

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p