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    48N50Q Price and Stock

    IXYS Corporation

    IXYS Corporation IXFN48N50Q

    MOSFET N-CH 500V 48A SOT-227B
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    IXYS Corporation IXFX48N50Q

    MOSFET N-CH 500V 48A PLUS247-3
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    Chip 1 Exchange IXFX48N50Q 150
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    Vyrian IXFX48N50Q 1,310
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    IXYS Corporation IXFR48N50Q

    MOSFET N-CH 500V 40A ISOPLUS247
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    IXYS Corporation IXFE48N50Q

    MOSFET N-CH 500V 41A SOT-227B
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    IXYS Corporation IXFK48N50Q

    MOSFET N-CH 500V 48A TO264AA
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    48N50Q Datasheets Context Search

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    48N50

    Abstract: 48N50Q 44N50
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q RDS on 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		44N50Q 48N50Q 44N50 48N50 OT-227 E153432 48N50 48N50Q 44N50 PDF

    48N50Q

    Abstract: 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings


    Original     		ISOPLUS247TM, 44N50Q 48N50Q 247TM E153432 IXFR44N50Q: IXFR48N50Q: 728B1 48N50Q 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q PDF

    44N50

    Abstract: 48N50 48N50Q ixys ixfk 44n50
    Text: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)


    Original     		48N50Q 44N50Q 247TM 44N50 48N50 ixys ixfk 44n50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original     		ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q: PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr ≤ 250 ns Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50


    Original     		44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFE 44N50Q IXFE 48N50Q ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions


    Original     		44N50Q 48N50Q 227TM 728B1 123B1 728B1 PDF

    48N50Q

    Abstract: s 404 p
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ IXFE 44N50Q IXFE 48N50Q trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings


    Original     		44N50Q 48N50Q 728B1 123B1 728B1 065B1 48N50Q s 404 p PDF

    48N50Q

    Abstract: IXFN48N50Q 44N50
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ IXFE 44N50Q IXFE 48N50Q trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions


    Original     		44N50Q 48N50Q 227TM IXFN48N50Q 44N50Q: 48N50Q: 48N50Q 44N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX)


    Original     		48N50Q 44N50Q 247TM O-264 44N50 48N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original     		ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q: PDF

    IXFR44N50Q

    Abstract: IXFR48N50Q 48N50Q ixfr48n5
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings


    Original     		ISOPLUS247TM, 44N50Q 48N50Q 728B1 123B1 728B1 065B1 IXFR44N50Q IXFR48N50Q 48N50Q ixfr48n5 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 44N50


    Original     		44N50Q 48N50Q 44N50 48N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr £ 250 ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A


    Original     		44N50Q 48N50Q 44N50 48N50 48N50 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet


    Original     		ISOPLUS247TM, 44N50Q 48N50Q 48N50Q -55ss PDF

    123B16

    Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM


    Original     		44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1 123B16 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q PDF

    buck-boost chopper

    Abstract: buck pfc sot 227b diode fast 48N50Q IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 IXFK48N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V 48N50QD2 48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 Preliminary data sheet 2 2 4 1 1 Symbol


    Original     		IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 227TM 44N50Q 48N50Q IXFK48N50Q buck-boost chopper buck pfc sot 227b diode fast 48N50Q IXFK48N50 PDF

    switch reluctance motor

    Abstract: A41A
    Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V 48N50QD2 48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 Preliminary data sheet 2 2 4 1 1 Symbol


    Original     		IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 44N50Q 48N50Q 48N50Q 227TM IXFN48N50U2/U3 switch reluctance motor A41A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information VDSS HiPerFET TM Power MOSFETs trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		48N50Q 44N50Q 247TM 44N50 48N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFET TM Power MOSFETs trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original     		48N50Q 44N50Q 247TM 44N50 48N50 728B1 123B1 PDF

    IXFK48N50

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V 48N50QD2 48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 2 2 4 D2 Symbol Test Conditions D3


    Original     		IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 227TM 44N50Q 48N50Q IXFK48N50Q IXFK48N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFET TM Power MOSFETs trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original     		48N50Q 44N50Q 247TM 728B1 123B1 728B1 065B1 PDF

    48N50Q

    Abstract: buck pfc IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 44N50Q IXFK48N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V 48N50QD2 48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 2 2 4 D2 HiPerFET MOSFET Symbol Test Conditions


    Original     		IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 44N50Q 48N50Q IXFK48N50Q IXFE44N50 48N50Q buck pfc 44N50Q IXFK48N50 PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 PDF

    48N50Q

    Abstract: 44N50 48N50
    Text: VDSS HiPerFET TM Power MOSFETs trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr PLUS 247TM IXFX Test Conditions Maximum Ratings G VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original     		247TM 44N50 48N50 728B1 123B1 728B1 065B1 48N50Q 44N50 48N50 PDF