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    180N15 Search Results

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    180N15 Price and Stock

    Littelfuse Inc IXFN180N15P

    MOSFET N-CH 150V 150A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN180N15P Tube 1,715 1
    • 1 $28.12
    • 10 $24.991
    • 100 $21.8578
    • 1000 $18.652
    • 10000 $18.652
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    Littelfuse Inc IXTK180N15P

    MOSFET N-CH 150V 180A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTK180N15P Tube 293 1
    • 1 $15.82
    • 10 $15.82
    • 100 $12.0546
    • 1000 $10.92444
    • 10000 $10.92444
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    Nisshinbo Micro Devices R1180N151B-TR-FE

    IC REG LINEAR 1.5V 150MA SOT23-5
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    DigiKey R1180N151B-TR-FE Cut Tape 90 1
    • 1 $0.68
    • 10 $0.6
    • 100 $0.46
    • 1000 $0.29088
    • 10000 $0.29088
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    R1180N151B-TR-FE Digi-Reel 1
    • 1 $0.68
    • 10 $0.6
    • 100 $0.46
    • 1000 $0.29088
    • 10000 $0.29088
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    R1180N151B-TR-FE Reel 3,000
    • 1 -
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    • 10000 $0.225
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    Mouser Electronics R1180N151B-TR-FE 97
    • 1 $0.68
    • 10 $0.564
    • 100 $0.428
    • 1000 $0.291
    • 10000 $0.225
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    Littelfuse Inc IXFX180N15P

    MOSFET N-CH 150V 180A PLUS247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFX180N15P Tube 55 1
    • 1 $11.12
    • 10 $11.12
    • 100 $9.32433
    • 1000 $9.32433
    • 10000 $9.32433
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    IXYS Corporation IXTK180N15

    MOSFET N-CH 150V 180A TO264
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    DigiKey IXTK180N15 Tube
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    180N15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    I 508 V

    Abstract: 180N15P IXTK180N15P
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 180N15P VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VDSS VGSM Continuous


    Original     		PDF 180N15P I 508 V 180N15P IXTK180N15P

    680-W

    Abstract: 180N15P IXFN180N15P
    Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous


    Original     		PDF 180N15P 03-23-06-C 680-W 180N15P IXFN180N15P

    180n15p

    Abstract: 180N15 PLUS247 IXFX180N15P
    Text: PolarTM HiPerFET Power MOSFET IXFK 180N15P IXFX 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 180N15P -55ombs 180n15p 180N15 PLUS247 IXFX180N15P

    IXTK180N15P

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 180N15P VDSS = 150 V ID25 = 180 A RDS on ≤ 10 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VDSS VGSM


    Original     		PDF 180N15P IXTK180N15P

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS = 150 V ID25 = 180 A RDS on ≤ 10 m Ω IXTK 180N15P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VDSS VGSM


    Original     		PDF 180N15P

    180N15

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		PDF 180N15 O-264 728B1 180N15

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous


    Original     		PDF 180N15P OT-227 E153432 03-23-06-C

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 180 A RDS on ≤ 11 m Ω ≤ 200 ns trr IXFK 180N15P IXFX 180N15P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 180N15P

    180N15

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ IXFK 180N15P N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100


    Original     		PDF 180N15P O-264 180N15

    180N15

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		PDF 180N15 728B1 180N15

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 180N15P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = = ≤ ≤ 150 V 100 A Ω 13 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 180N15P ISOPLUS247TM 03-23-06-C

    IXFR 180N15P

    Abstract: fd 715 ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 180N15P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = = ≤ ≤ 150 V 100 A Ω 13 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C


    Original     		PDF 180N15P ISOPLUS247TM 03-23-06-C IXFR 180N15P fd 715 ISOPLUS247

    180N15

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150


    Original     		PDF 180N15 728B1 123B1 728B1 065B1 180N15

    Untitled

    Abstract: No abstract text available
    Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS Continuous


    Original     		PDF 180N15 O-264 728B1

    180N15

    Abstract: 123B16
    Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS


    Original     		PDF 180N15 728B1 123B1 728B1 065B1 180N15 123B16

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP