64N50 Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
DF61664N50FPV		Renesas Electronics Corporation	Microcontrollers with 32-bit CISC CPU for System Control Applications (Non Promotion), LQFP, /

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Littelfuse Inc IXFN64N50P MOSFET N-CH 500V 61A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN64N50P	Tube	164		1	1 $29.37 10 $26.1 100 $22.8276 1000 $19.47952 10000 $19.47952	Buy Now
Renesas Electronics Corporation DF61664N50FPV IC MCU 32BIT 512KB FLSH 144LFQFP
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DigiKey	DF61664N50FPV	Tray	68		1	1 $36.27 10 $33.835 100 $32.417 1000 $28.36483 10000 $28.36483	Buy Now
Avnet Americas	DF61664N50FPV	Tray		12 Weeks	60	1 - 10 - 100 $29.087 1000 $26.078 10000 $25.4762	Buy Now
Mouser Electronics	DF61664N50FPV					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics America	DF61664N50FPV	Tray	68		1	1 $36.27 10 $33.835 100 $32.417 1000 $28.36483 10000 $28.36483	Buy Now
Littelfuse Inc IXFR64N50P MOSFET N-CH 500V 35A ISOPLUS247
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DigiKey	IXFR64N50P	Tube	20		1	1 $13.76 10 $13.76 100 $11.539 1000 $11.539 10000 $11.539	Buy Now
Littelfuse Inc IXFX64N50P MOSFET N-CH 500V 64A PLUS247-3
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DigiKey	IXFX64N50P	Tube			1	1 $17.78 10 $17.78 100 $14.393 1000 $12.27631 10000 $12.27631	Buy Now
Littelfuse Inc IXFK64N50P MOSFET N-CH 500V 64A TO264AA
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DigiKey	IXFK64N50P	Tube			25	1 - 10 - 100 $13.8308 1000 $11.79669 10000 $11.79669	Buy Now

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64N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
sot 227b diode fast Abstract: SOT227B 64N50 64N50P IXFN64N50P sot 227b Text: PolarHVTM HiPerFET Power MOSFET IXFN 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 64 A ≤ 85 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	64N50P 405B2 sot 227b diode fast SOT227B 64N50 64N50P IXFN64N50P sot 227b
64N50 Abstract: fd 715 64N50P ISOPLUS247 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 64N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 43 A ≤ 100 mΩ Ω ≤ 200 ns (Electrically Isolated Back Surface) Symbol	Original	PDF	64N50P ISOPLUS247TM 64N50 fd 715 64N50P ISOPLUS247
64N50P Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFN 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode = = ≤ ≤ 500 V 64 A Ω 85 mΩ 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	64N50P OT-227 E153432 64N50P
diode m4 Abstract: 64N50 uc pfc NS2004 Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 64N50PD2 VDSS ID25 RDS on Boost Configuration for PFC Circuits trr 3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 52 A ≤ 85 m Ω ≤ 200 ns 4 2 1 Symbol	Original	PDF	64N50PD2 405B2 diode m4 64N50 uc pfc NS2004
64N50 Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 AA (IXTK) Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	64N50P 64N50P O-264 PLUS247 405B2 64N50
64N50P Abstract: 64N50 PLUS247 ixfk64n50p IXFX64N50P Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	64N50P 64N50P 64N50 PLUS247 ixfk64n50p IXFX64N50P
64N50 Abstract: 64n50p IXFX64N50P PLUS247 Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 AA (IXFK) Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	64N50P O-264 64N50 64n50p IXFX64N50P PLUS247
64N50 Abstract: 64N50P ISOPLUS247 Text: PolarHVTM HiPerFET Power MOSFET IXFR 64N50P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 500 V = 35 A ≤ 95 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	PDF	64N50P ISOPLUS247TM 64N50 64N50P ISOPLUS247
"SOT-227 B" dimensions Abstract: SOT-227 Package 64N50P 64N50 BE 64A HiperFET SOT-227B Outline IXFN64N50P Text: PolarHVTM HiPerFET Power MOSFET VDSS = 500 V ID25 = 61 A RDS on ≤ 85 m Ω ≤ 200 ns trr IXFN 64N50P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	64N50P OT-227 E153432 "SOT-227 B" dimensions SOT-227 Package 64N50P 64N50 BE 64A HiperFET SOT-227B Outline IXFN64N50P
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	PDF	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p