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    sk 0632

    Abstract: No abstract text available
    Text: NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • OUTPUT POWER AND EFFICIENCY HIGH P out 18W 42.5 dBm Typ PidB for NEZ5964-15D/15DL 9W (39.5 dBm) Typ P idB for NEZ5964-8D/8DL 4.5W (36.5 dbm) Typ PidB for NEZ5964-4D/40L


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    PDF NEZ5964-15D/15DL NEZ5964-8D/8DL NEZ5964-4D/40L NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL -15DL sk 0632

    2sa1424

    Abstract: NE88900 NE889
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in


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    PDF NE88900 NE88912 NE88933 NE88935 NE88900, NE88912, NE88933, NE88935 OT-23) 2sa1424 NE889

    2SC2570

    Abstract: 2sc2570 transistor NE02132
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,


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    PDF NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132

    ne800299

    Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
    Text: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY


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    PDF NE800196 NE800296 NE8001 NE8002 lS21l lS22l IS12I L42752S ne800299 NE800199 NE800200 40MAG NE800

    NE72089A

    Abstract: NE720 MB427 ne72089 NE72000 2SK354A RN50
    Text: NEC GENERAL PURPOSE GaAs MESFET FEATURES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7dB at8G H z • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz m "D HIGH MAXIMUM AVAILABLE GAIN 16.0 dB at 4 GHz


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    PDF NE720 NE72089A NE72000) NE72089A) NE72000 PACKAGEOUTUNE89A NE72000M MB427 ne72089 2SK354A RN50

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


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    PDF NE74000 NE74014 NE740 NE90115 MIL-S-19500. IS12I 427SB5

    Untitled

    Abstract: No abstract text available
    Text: NEZ5964-15D NEZ5964-15DD NEZ5964-8D NEZ5964-8DD NEZ5964-4D NEZ5964-4DD C-BAND POWER GaAs MESFET O UTPUT POWER AND EFFICIENCY FEATURES HIGH P o u t 18W 42.5 dBm Typ P id B for NEZ5964-15D /15D D 9W (39.5 dBm) Typ P id B for NEZ5964-8D/8D D 4.5W (36.5 dbm) Typ P id B for NEZ5964-4D/4DD


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    PDF NEZ5964-15D NEZ5964-15DD NEZ5964-8D NEZ5964-8DD NEZ5964-4D NEZ5964-4DD NEZ5964-15D NEZ5964-8D/8D NEZ5964-4D/4DD -15DD

    Untitled

    Abstract: No abstract text available
    Text: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 6mA FEATURES 2.8 dB NOISE FIG URE LOW VO LTA G E - LOW CU RREN T: 6 mA at 3 V GS LOW PO W ER CO NSU M PTIO N: 18 mW TYP SUPER SM A LL PACKAG E 3.5 TAPE AN D REEL PAC KAG ING OPTIO N AVA ILAB LE


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    PDF UPC2748T 2748T UPC2748T-E3 b4Z75E5 DDLST73

    IS12I

    Abstract: NE334S01
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE334S01 FEATURES_ MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.25 dB TYP at 4 GHz 24 - — -


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    PDF NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B 24-Hour IS12I

    ET 8211

    Abstract: No abstract text available
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 20 mA FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CO HIGH ASSOCIATED GAIN:


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    PDF OT-343) NE34018 NE34018 NE34018-TI-63 NE34018-TI-64 24-Hour ET 8211

    Untitled

    Abstract: No abstract text available
    Text: |\|EC SUPER LOW NOISE C TO KA BAND AMPLIFIER NE27200 N-CHANNEL HJ FET CHIP FEATURES_ OUTLINE DIMENSIONS Units in nm • S U P E R L O W N O IS E FIG U R E : 0.45 dB TYP at 12 GHz CHIP • H IG H A S S O C IA T E D G A IN : 12.5 dB TYP at 12 GHz


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    PDF NE27200 NE27200 IS12S21I 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES_ NE32500 OUTLINE DIMENSIONS Units in nm • S U P E R L O W N O IS E FIG U R E : 0.45 dB TYP at 12 GHz CHIP • H IG H A S S O C IA T E D G A IN : 12.5 dB TYP at 12 GHz


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    PDF NE32500 NE32500 IS12S21I 24-Hour

    Nec 4558 c

    Abstract: NE33284A-SL NE33284AS 33284a
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA V ER Y LO W NO ISE FIG URE: 0.8 dB typical at 12 GHz HIG H A S S O C IA T E D G AIN : 10.5 dB Typical at 12 GHz m G A TE LE N G T H : 0.3 urn «


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    PDF NE33284A NE33284A NE33284AS NE33284A-T1 84ASL NE33284A-SL. Nec 4558 c NE33284A-SL 33284a

    transistor NEC D 882

    Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION


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    PDF NE856 24-Hour transistor NEC D 882 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55

    date sheet ic 7483

    Abstract: uc 3843 gm 8 pin ic 9435 9435 GM
    Text: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, G a = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE


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    PDF NE429M01 NE429M01 NE429M01-T1 24-Hour date sheet ic 7483 uc 3843 gm 8 pin ic 9435 9435 GM

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage


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    PDF NE6500496 NE6500496 IS12I IS22I2 IS12S21I NEC Microwave Semiconductors

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE GaAs MESFET FEATURES • LOW NOISE FIGURE: NF - 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: Ga = 12.0 dB typical at f = 4 GHz • Lg = 1.0 |im, W g = 400 Jim NE7610o NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Id s = 10 mA


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    PDF NE7610o NE76100 NE76100 NE761QQN NE76100M 98B-3500« 24-Hour

    mje 1303

    Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100

    Untitled

    Abstract: No abstract text available
    Text: NECSUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET SPACE QUALIFIED FEATURES_ NE23383B OUTLINE DIMENSIONS • SUPER LOW NOISE FIGURE: (Units in mm) PACKAGE OUTLINE 83B NF = 0.35 dB TVP at f = 4 GHz • HIGH ASSOCIATED GAIN: G a = 15.0 dB TYP at f = 4 GHz


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    PDF NE23383B NE23383B IS2212 IS12I IS12S21I

    Transistors BF 494

    Abstract: Transistor BJT 547 b transistor kf 469
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)


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    PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469

    Untitled

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:


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    PDF NE329S01 NE329S01 Rn/50 NE329S01-T1 NE329S01-T1B

    80500 TRANSISTOR

    Abstract: No abstract text available
    Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200


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    PDF NE85002 NE8500295 AN-1001 80500 TRANSISTOR

    EZ 707

    Abstract: 2SC3544 EZ 0710 EZ 728
    Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry


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    PDF NE944 EZ 707 2SC3544 EZ 0710 EZ 728

    transistor npn c 6073

    Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)


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    PDF NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139