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    NE680 Price and Stock

    California Eastern Laboratories (CEL) NE68030-T1-A

    SAME AS 2SC4228 NPN SILICON AMPL
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    DigiKey NE68030-T1-A Reel 15,000 3,000
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    NE68030-T1-A Digi-Reel 1
    • 1 $1.53
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    NE68030-T1-A Cut Tape
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    California Eastern Laboratories (CEL) NE68018-T1-A

    RF TRANS NPN 10V 10GHZ SOT343
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    DigiKey NE68018-T1-A Reel 12,000 3,000
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    Bristol Electronics NE68018-T1-A 2,600
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    California Eastern Laboratories (CEL) NE68033-T1B-A

    SAME AS 2SC3585 NPN SILICON AMPL
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    DigiKey NE68033-T1B-A Reel 12,000 3,000
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    NE68033-T1B-A Digi-Reel 1
    • 1 $1.53
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    Bristol Electronics NE68033-T1B-A 2,485 2
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    • 100 $1.5681
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    Quest Components NE68033-T1B-A 1,988
    • 1 $4.5
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    • 100 $4.5
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    California Eastern Laboratories (CEL) NE68039R-T1

    RF TRANS NPN 10V 10GHZ SOT143R
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    DigiKey NE68039R-T1 Cut Tape 667 1
    • 1 $0.64
    • 10 $0.529
    • 100 $0.4634
    • 1000 $0.4352
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    California Eastern Laboratories (CEL) NE68019-A

    RF TRANS NPN 10V 10GHZ SOT523
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    NE680 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE680 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68000 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68000 NEC NPN silicon high frequency transistor. Original PDF
    NE68000 NEC 10 GHz, NPN silicon high frequency transistor Scan PDF
    NE68018 NEC NPN silicon high frequency transistor. Original PDF
    NE68018 NEC Semiconductor Selection Guide Original PDF
    NE68018-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original PDF
    NE68018-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68018-T1 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68018-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT343 Original PDF
    NE68019 NEC NPN silicon high frequency transistor. Original PDF
    NE68019 NEC Semiconductor Selection Guide Original PDF
    NE68019-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ 3-SMD Original PDF
    NE68019-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68019-T1 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68019-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SMD Original PDF
    NE68030 NEC Semiconductor Selection Guide Original PDF
    NE68030 NEC NPN silicon high frequency transistor. Original PDF
    NE68030 NEC Super Minihold Transistors Scan PDF
    NE68030-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ SOT-323 Original PDF

    NE680 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m03 transistor

    Abstract: NE AND micro-X nec 08e 2SC5434 NE680 NE680M03 S21E BF179 bjt npn m03 low noise transistor bF 179
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:


    Original     		PDF NE680M03 NE680M03 24-Hour m03 transistor NE AND micro-X nec 08e 2SC5434 NE680 S21E BF179 bjt npn m03 low noise transistor bF 179

    transistor 8730

    Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		PDF UPA800T NE680 UPA800T 24-Hour transistor 8730 NPN Transistor 8440 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68033 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 3.84e-16 MJC 0.64 time seconds BF 124.9 XCJC capacitance farads


    Original     		PDF NE68033 84e-16 0e-14 01e-4 358e-12 162e-12 7e-12 635e-9 6803ts 08e-12

    NE68019

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68019 Q1 Collector Base Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS UNITS Parameter seconds 0.64 capacitance farads inductance henries resistance ohms volts amps


    Original     		PDF NE68019 84e-16 0e-14 01e-4 358e-12 162e-12 7e-12 635e-9 08e-12 NE68019

    Untitled

    Abstract: No abstract text available
    Text: NE68019 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 1 UNITS Parameter Units IS 3.84e-16 MJC 0.64 time seconds BF 124.9 XCJC capacitance farads NF 1.05


    Original     		PDF NE68019 84e-16 0e-14 01e-4 358e-12 162e-12 7e-12 635e-9 6801arameters 08e-12

    NF NPN Silicon Power transistor TO-3

    Abstract: UPA800T bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 NE680 S21E UPA800T-T1 97 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz


    Original     		PDF UPA800T NE680 UPA800T 24-Hour NF NPN Silicon Power transistor TO-3 bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 S21E UPA800T-T1 97 transistor

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR UPA811T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz


    Original     		PDF NE680 UPA811T UPA811T UPA811T-T1-A 24-Hour

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    transistor k 4110

    Abstract: mje 3007 UPA800T 3019 Transistor BJT 5240
    Text: SILICON TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • UPA800T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz


    Original     		PDF NE680 UPA800T UPA800T 24-Hour transistor k 4110 mje 3007 3019 Transistor BJT 5240

    014e1

    Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 014e1 transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE68018

    Untitled

    Abstract: No abstract text available
    Text: NE68030 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units time seconds IS 3.84e-16 MJC 0.64 BF 124.9 XCJC capacitance farads


    Original     		PDF NE68030 84e-16 0e-14 01e-4 358e-12 162e-12 7e-12 635e-9 08e-12

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


    Original     		PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    NE46734

    Abstract: NE46134 NE681 NE685 1817 transistor NE680 ne85634 NE021 NE734 NE856
    Text: Small Signal Bipolar Transistor Performance Guide Optimum Noise Figure, NFOPT dB NE734 NE856 NE685 NE021 NE734 NE685 NE681 NE021 NE681 NE856 NE680 3.0 NE680 2.0 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10.0 Gain at Optimum Noise Figure, GA (dB) 4.0 Output Power, POUT (dBm) & Gain GA (dB)


    Original     		PDF NE734 NE856 NE685 NE021 NE681 NE46734 NE46134 NE681 NE685 1817 transistor NE680 ne85634 NE021 NE734 NE856

    upa dual transistor

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR U P A q00T PRELIMINARY FEATURES OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz HIGH GAIN: |S21 E|2 = 7.5 dB TYP at 2 GHz


    OCR Scan     		PDF NE680 UPA800T UPA800T-T1, bM27525 00b5771 upa dual transistor

    NE68018

    Abstract: No abstract text available
    Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10


    OCR Scan     		PDF OT-23) NE68018

    CHIP transistor 348

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE680M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


    OCR Scan     		PDF NE680M03 NE680M03 NE680 CHIP transistor 348

    mje 1303

    Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100

    HA 12058

    Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 HA 12058 TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor

    NE68019

    Abstract: NE68839 NE68018 NE68719
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3


    OCR Scan     		PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 OT-343 NE68019 NE68119 NE68839 NE68719

    transistor mje 350

    Abstract: UPA800T 40164
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPMQQj OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: N F = 1.9 dB TYP at 2 GHz • HIGH GAIN: IS2 1EI2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    OCR Scan     		PDF NE680 UPA800T 84e-16 1e-14 358e-12 162e-12 7e-12 635e-9 UPA800T transistor mje 350 40164

    ha 1452 Amplifiers

    Abstract: 702 sot 23 100Z3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz ;• .6 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 3.0 dB TYP at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 OT-23) ha 1452 Amplifiers 702 sot 23 100Z3

    702 TRANSISTOR sot-23

    Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B 702 TRANSISTOR sot-23 mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331

    ls 7413 n

    Abstract: V 8623 transistor UPA800T HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor
    Text: UPA800T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: • HIGH GAIN: • EXCELLENT LOW VOLTAGE, LOW CURRENT


    OCR Scan     		PDF NE680 UPA800T UPA800T 24-Hour ls 7413 n V 8623 transistor HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor

    2SC3586

    Abstract: NE68000 2SC3585 NE68035 2SC3587 NE68033 NE680 NE68037 epitaxial micro-x IE68C
    Text: N E C / S 1SE CALIFORNIA E D • 1=427414 QDG143b b tsh t NE68000 NE68033 NE68035 NE68037 NPN SILICON HIGH FREQUENCY TRANSISTOR C FEATURES DESCRIPTION AND APPLICATIONS • HIG H GAIN BANDW IDTH PRODUCT: fr = 10 GHz The NE680 series o f NPN epitaxial silicon transistors is


    OCR Scan     		PDF NE68000 NE68033 NE68035 NE68037 NE680 2SC3586 2SC3585 2SC3587 NE68037 epitaxial micro-x IE68C