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    NE740 Search Results

    NE740 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    SIT3808ACD22-33NE-74.000000 SiTime 1 to 80 MHz, ±10 to ±50 ppm VCXO Datasheet
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    NE740 Price and Stock

    TAIYO YUDEN PJ D5NE740M0P1C9MZA

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics PJ D5NE740M0P1C9MZA 1,000
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    NE740 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE74000 NEC 2.2 GHz, NPN medium power UHF-VHF transistor Scan PDF
    NE74014 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE74014 NEC 2 GHz, NPN medium power UHF-VHF transistor Scan PDF
    NE74020 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE74020 Unknown Transistor Replacements Scan PDF
    NE74020 NEC 2.2 GHz, NPN medium power UHF-VHF transistor Scan PDF
    NE74054 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE74054 Unknown Transistor Replacements Scan PDF

    NE740 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1251

    Abstract: NE74020 TVU005B
    Text: 2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. PACKAGE STYLE .204 4L STUD FEATURES INCLUDE: • Direct Replacement for NE74020 • High Gain - 10 dB min. @ 1.0 GHz


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    PDF 2SC1251 2SC1251 NE74020 NE74020 TVU005B

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    AA59569R36S0500

    Abstract: AA59569R36T0250 AA59569R36T0171 A-A-59569 AA59569R36T0375 aa59569r36t0500 AA59569r36t AA59569R36S0375 AA59569R34T0125 AA59569R36S0781
    Text: Braids, Cables & Strands Technical Information Bare, Tinned, & Silver-plated Copper . 2 & 3 Standard & Extrawide Braided Copper . 4 & 5 Extraflexible, Round Braided Copper . 5 & 6


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    PDF QQ-B-575) AA59569R36S0500 AA59569R36T0250 AA59569R36T0171 A-A-59569 AA59569R36T0375 aa59569r36t0500 AA59569r36t AA59569R36S0375 AA59569R34T0125 AA59569R36S0781

    Catalog

    Abstract: 100352 IEC 158-1 VDE 0660
    Text: PRODUCT SELECTION GUIDE CUSTOM ROPE-LAY CABLESTOLL BRAIDING FLAT WIRE BRAIDING RANDS G BRAID-REINFORCED CAPILLARY TUBING G SINGLE-THICKNESS BRAIDS SCOPE BRAIDS AIDING BRAID-REINFORCED TUBING AIDS SINGLE-THICKNESS BRAIDS BRAID-REINFORCED TUBING BRAIDS REINFORCED CABLES AND STRANDS


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    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


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    PDF NE74000 NE74014 NE740 NE90115 MIL-S-19500. IS12I 427SB5

    2SC1253

    Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for


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    PDF MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733

    2SC1253

    Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in­


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    PDF MS7414 NE74000 NE74014 NE74020 NE740 2SC1253 2SC1251 NEC k 2134 transistor NE74020 NE90115 CTO-39 2143E 1321E12

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES DESCRIPTION • HIGH GAIN BANDW IDTH PRO DUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for w ide bandw idth V H F and U H F am plifiers. Excellent intermodulation characteristics and low noise make the series


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    PDF NE74000 NE74014 NE740 NE90115 quality31

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


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    PDF NE74000 NE74014 NE740 NE90115 quali16

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


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    PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    2SA1224

    Abstract: E90115
    Text: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch­


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    PDF NE74014 NE90100 NE90115 NE901 665um) 462um) 690um) IS12I 2SA1224 E90115

    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


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    PDF LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    transistor IR 324 C

    Abstract: transistor selection guide
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency


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    PDF NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide