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    NE681 Price and Stock

    California Eastern Laboratories (CEL) NE68119-T1-A

    SAME AS 2SC5007 NPN SILICON AMPL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE68119-T1-A Reel 87,000 3,000
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    • 10000 $0.68
    		Buy Now

    California Eastern Laboratories (CEL) NE68133-T1B-R34-A

    RF TRANS NPN 10V 9GHZ SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE68133-T1B-R34-A Reel 27,000 3,000
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    • 10000 $1.6
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    California Eastern Laboratories (CEL) NE68139-T1-A

    SAME AS 2SC4094 NPN SILICON AMPL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE68139-T1-A Reel 15,000 3,000
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    Quest Components NE68139-T1-A 2,280
    • 1 $1.352
    • 10 $1.352
    • 100 $1.352
    • 1000 $0.5408
    • 10000 $0.4732
    		Buy Now

    Rochester Electronics LLC TLE4983CHTNE6815HAMA1

    MAGNETIC SWITCH PROG MONO CEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TLE4983CHTNE6815HAMA1 Bulk 13,500 106
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    • 1000 $2.85
    • 10000 $2.85
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    California Eastern Laboratories (CEL) NE68118-T1-A

    RF TRANS NPN 10V 9GHZ SOT343
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE68118-T1-A Reel 3,000 3,000
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    • 10000 $2
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    Find more NE681 price and stock on Findchips.com

    NE681 Datasheets (66)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE681 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68100 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68100 NEC NPN silicon high frequency transistor. Original PDF
    NE68100 NEC 9 GHz, NPN silicon high frequency transistor Scan PDF
    NE68118 NEC NPN silicon high frequency transistor. Original PDF
    NE68118 NEC Semiconductor Selection Guide Original PDF
    NE68118-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-343 Original PDF
    NE68118-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68118-T1 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68118-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT343 Original PDF
    NE68119 NEC Semiconductor Selection Guide Original PDF
    NE68119 NEC NPN silicon high frequency transistor. Original PDF
    NE68119-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD Original PDF
    NE68119-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68119-T1 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68119-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD Original PDF
    NE68130 NEC Semiconductor Selection Guide Original PDF
    NE68130 NEC NPN silicon high frequency transistor. Original PDF
    NE68130 NEC Super Minihold Transistors Scan PDF
    NE68130-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original PDF

    NE681 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE68135

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68135 Q1 CCB_PKG 0.11pF 0.07pF LC 0.96 nH CCB RB_PKG LB_PKG LB 0.15nH 0.45nH RC_PKG COLLECTOR 0.1 ohms CCE 0.01pF BASE 0.1 ohms LC_PKG 0.15nH CCE_PKG 0.2pF LE_PKG 0.38nH CBE_PKG 0.05pF RE_PKG 0.1 ohms CBEX_PKG CCEX_PKG 0.2pF 0.1pF


    Original     		PDF NE68135 7e-16 77e-11 2e-12 8e-12 14e-12 24-Hour NE68135

    NE68118

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68118 Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LC LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185 XCJC NF 1.02 CJS VAF 15 VJS 0.75 IKF 0.055 MJS ISE 1.77e-11


    Original     		PDF NE68118 7e-16 77e-11 2e-12 8e-12 14e-12 07e-12 01e-12 16NAL NE68118

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor

    ic 741 free

    Abstract: 2SA1977 NE68133 NE97733 NE97733-T1 S21E iC 828 Transistor
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97733 NE68133 NE97733 2SA1977 NE97733-T1 24-Hour ic 741 free 2SA1977 NE68133 NE97733-T1 S21E iC 828 Transistor

    Untitled

    Abstract: No abstract text available
    Text: NE68130 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10


    Original     		PDF NE68130

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR UPA812T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz


    Original     		PDF UPA812T NE681 UPA812T UPA812T-T1-A 24-Hour

    ic 741 free

    Abstract: T92 marking 2SA1977 NE68133 NE97733 S21E 682 MARKING SOT-23 sot-23 24
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97733 NE68133 NE97733 2SA1977 24-Hour ic 741 free T92 marking 2SA1977 NE68133 S21E 682 MARKING SOT-23 sot-23 24

    Untitled

    Abstract: No abstract text available
    Text: NE68137 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10


    Original     		PDF NE68137

    Untitled

    Abstract: No abstract text available
    Text: NE68133 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10


    Original     		PDF NE68133

    Untitled

    Abstract: No abstract text available
    Text: NE68100 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10


    Original     		PDF NE68100

    2SA1977

    Abstract: NE68133 NE97733 S21E
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97733 NE68133 NE97733 2SA1977 2SA1977 NE68133 S21E

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original     		PDF NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118

    NE681M03

    Abstract: m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 NE681 S21E 2SC543
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


    Original     		PDF NE681M03 NE681M03 NE681 m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 S21E 2SC543

    c 5929 transistor

    Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299
    Text: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz


    Original     		PDF UPA802T NE681 UPA802T UPA802T-T1-A 24-Hour c 5929 transistor transistor k 2541 Transistor C 4927 741 LEM 2955 transistor lem 723 733 transistor c 5299

    UPA802T

    Abstract: 10 ghz transistor npn dual emitter RF Transistor NE681 S21E UPA802T-T1 2 ghz transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz


    Original     		PDF UPA802T NE681 UPA802T UPA802T-T1, 24-Hour 10 ghz transistor npn dual emitter RF Transistor S21E UPA802T-T1 2 ghz transistor

    2SC5650

    Abstract: NE681 NE681M23 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height


    Original     		PDF NE681M23 NE681M23 24-Hour 2SC5650 NE681 S21E

    2SC5615

    Abstract: NE681 NE681M13 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –


    Original     		PDF NE681M13 NE681M13 24-Hour 2SC5615 NE681 S21E

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz 2.1 HIGH GAIN: IS21 EI2 = 12 dB TYP at 1 GHz


    OCR Scan     		PDF NE681 UPA812T UPA812T-T1

    Transistors BF 494

    Abstract: Transistor BJT 547 b transistor kf 469
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469

    NE66100

    Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr - 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP


    OCR Scan     		PDF NE681 NE66100 transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806

    transistor npn c 6073

    Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)


    OCR Scan     		PDF NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139

    NE68019

    Abstract: NE68839 NE68018 NE68719
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3


    OCR Scan     		PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 OT-343 NE68019 NE68119 NE68839 NE68719

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN:


    OCR Scan     		PDF NE681 UPA812T UPA812T UPA812T-T1, 24-Hour

    bjt npn m03

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS um ts in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: pi • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


    OCR Scan     		PDF NE681M03 NE681M03 NE681 4e-12 24-Hour bjt npn m03