NE76100
Abstract: NE76100M NE76100N
Text: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of
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NE76100
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NE76100
Abstract: NE76100M NE76100N
Text: GENERAL PURPOSE GaAs MESFET FEATURES DESCRIPTION Optimum Noise Figure, NFOPT dB • LG = 1.0 µm, WG = 400 µm 4 24 3.5 21 3 18 Ga 2.5 15 2 12 9 1.5 6 1 NF 0.5 3 NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure
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NE76100
NE76100
NE76100N
NE76100M
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE GaAs MESFET FEATURES • LOW NOISE FIGURE: NF - 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: Ga = 12.0 dB typical at f = 4 GHz • Lg = 1.0 |im, W g = 400 Jim NE7610o NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Id s = 10 mA
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NE7610o
NE76100
NE76100
NE761QQN
NE76100M
98B-3500«
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE GaAs MESFET FEATURES NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA LOW NOISE FIGURE: N F = 0.8 d B ty p ic a l at f = 4 G H z m "O HIGH ASSO CIATED GAIN: G a = 12.0 d B ty p ic a l at f = 4 G H z o z p T3 < Li_
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NE76100
IS12S21I
NE76100
140nm
NE76100N
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4435 ag
Abstract: 5q 1265 rf
Text: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz
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NE76100
E76100
NE76100
NE76100N
NE76100M
4435 ag
5q 1265 rf
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