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    sk 0632

    Abstract: No abstract text available
    Text: NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • OUTPUT POWER AND EFFICIENCY HIGH P out 18W 42.5 dBm Typ PidB for NEZ5964-15D/15DL 9W (39.5 dBm) Typ P idB for NEZ5964-8D/8DL 4.5W (36.5 dbm) Typ PidB for NEZ5964-4D/40L


    OCR Scan     		PDF NEZ5964-15D/15DL NEZ5964-8D/8DL NEZ5964-4D/40L NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL -15DL sk 0632

    2sa1424

    Abstract: NE88900 NE889
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in


    OCR Scan     		PDF NE88900 NE88912 NE88933 NE88935 NE88900, NE88912, NE88933, NE88935 OT-23) 2sa1424 NE889

    2SC2570

    Abstract: 2sc2570 transistor NE02132
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,


    OCR Scan     		PDF NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132

    ne800299

    Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
    Text: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY


    OCR Scan     		PDF NE800196 NE800296 NE8001 NE8002 lS21l lS22l IS12I L42752S ne800299 NE800199 NE800200 40MAG NE800

    NE72089A

    Abstract: NE720 MB427 ne72089 NE72000 2SK354A RN50
    Text: NEC GENERAL PURPOSE GaAs MESFET FEATURES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7dB at8G H z • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz m "D HIGH MAXIMUM AVAILABLE GAIN 16.0 dB at 4 GHz


    OCR Scan     		PDF NE720 NE72089A NE72000) NE72089A) NE72000 PACKAGEOUTUNE89A NE72000M MB427 ne72089 2SK354A RN50

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


    OCR Scan     		PDF NE74000 NE74014 NE740 NE90115 MIL-S-19500. IS12I 427SB5

    Untitled

    Abstract: No abstract text available
    Text: NEZ5964-15D NEZ5964-15DD NEZ5964-8D NEZ5964-8DD NEZ5964-4D NEZ5964-4DD C-BAND POWER GaAs MESFET O UTPUT POWER AND EFFICIENCY FEATURES HIGH P o u t 18W 42.5 dBm Typ P id B for NEZ5964-15D /15D D 9W (39.5 dBm) Typ P id B for NEZ5964-8D/8D D 4.5W (36.5 dbm) Typ P id B for NEZ5964-4D/4DD


    OCR Scan     		PDF NEZ5964-15D NEZ5964-15DD NEZ5964-8D NEZ5964-8DD NEZ5964-4D NEZ5964-4DD NEZ5964-15D NEZ5964-8D/8D NEZ5964-4D/4DD -15DD

    Untitled

    Abstract: No abstract text available
    Text: 3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2748T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 6mA FEATURES 2.8 dB NOISE FIG URE LOW VO LTA G E - LOW CU RREN T: 6 mA at 3 V GS LOW PO W ER CO NSU M PTIO N: 18 mW TYP SUPER SM A LL PACKAG E 3.5 TAPE AN D REEL PAC KAG ING OPTIO N AVA ILAB LE


    OCR Scan     		PDF UPC2748T 2748T UPC2748T-E3 b4Z75E5 DDLST73

    IS12I

    Abstract: NE334S01
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE334S01 FEATURES_ MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.25 dB TYP at 4 GHz 24 - — -


    OCR Scan     		PDF NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B 24-Hour IS12I

    ET 8211

    Abstract: No abstract text available
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 20 mA FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CO HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF OT-343) NE34018 NE34018 NE34018-TI-63 NE34018-TI-64 24-Hour ET 8211

    Untitled

    Abstract: No abstract text available
    Text: |\|EC SUPER LOW NOISE C TO KA BAND AMPLIFIER NE27200 N-CHANNEL HJ FET CHIP FEATURES_ OUTLINE DIMENSIONS Units in nm • S U P E R L O W N O IS E FIG U R E : 0.45 dB TYP at 12 GHz CHIP • H IG H A S S O C IA T E D G A IN : 12.5 dB TYP at 12 GHz


    OCR Scan     		PDF NE27200 NE27200 IS12S21I 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES_ NE32500 OUTLINE DIMENSIONS Units in nm • S U P E R L O W N O IS E FIG U R E : 0.45 dB TYP at 12 GHz CHIP • H IG H A S S O C IA T E D G A IN : 12.5 dB TYP at 12 GHz


    OCR Scan     		PDF NE32500 NE32500 IS12S21I 24-Hour

    Nec 4558 c

    Abstract: NE33284A-SL NE33284AS 33284a
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA V ER Y LO W NO ISE FIG URE: 0.8 dB typical at 12 GHz HIG H A S S O C IA T E D G AIN : 10.5 dB Typical at 12 GHz m G A TE LE N G T H : 0.3 urn «


    OCR Scan     		PDF NE33284A NE33284A NE33284AS NE33284A-T1 84ASL NE33284A-SL. Nec 4558 c NE33284A-SL 33284a

    transistor NEC D 882

    Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION


    OCR Scan     		PDF NE856 24-Hour transistor NEC D 882 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55

    date sheet ic 7483

    Abstract: uc 3843 gm 8 pin ic 9435 9435 GM
    Text: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, G a = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE


    OCR Scan     		PDF NE429M01 NE429M01 NE429M01-T1 24-Hour date sheet ic 7483 uc 3843 gm 8 pin ic 9435 9435 GM

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage


    OCR Scan     		PDF NE6500496 NE6500496 IS12I IS22I2 IS12S21I NEC Microwave Semiconductors

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE GaAs MESFET FEATURES • LOW NOISE FIGURE: NF - 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: Ga = 12.0 dB typical at f = 4 GHz • Lg = 1.0 |im, W g = 400 Jim NE7610o NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Id s = 10 mA


    OCR Scan     		PDF NE7610o NE76100 NE76100 NE761QQN NE76100M 98B-3500« 24-Hour

    mje 1303

    Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100

    Untitled

    Abstract: No abstract text available
    Text: NECSUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET SPACE QUALIFIED FEATURES_ NE23383B OUTLINE DIMENSIONS • SUPER LOW NOISE FIGURE: (Units in mm) PACKAGE OUTLINE 83B NF = 0.35 dB TVP at f = 4 GHz • HIGH ASSOCIATED GAIN: G a = 15.0 dB TYP at f = 4 GHz


    OCR Scan     		PDF NE23383B NE23383B IS2212 IS12I IS12S21I

    Transistors BF 494

    Abstract: Transistor BJT 547 b transistor kf 469
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469

    Untitled

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF NE329S01 NE329S01 Rn/50 NE329S01-T1 NE329S01-T1B

    80500 TRANSISTOR

    Abstract: No abstract text available
    Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200


    OCR Scan     		PDF NE85002 NE8500295 AN-1001 80500 TRANSISTOR

    EZ 707

    Abstract: 2SC3544 EZ 0710 EZ 728
    Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry


    OCR Scan     		PDF NE944 EZ 707 2SC3544 EZ 0710 EZ 728

    transistor npn c 6073

    Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)


    OCR Scan     		PDF NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139