Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFY9240 Search Results

    SF Impression Pixel

    IRFY9240 Price and Stock

    International Rectifier IRFY9240

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NexGen Digital IRFY9240 90
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IRFY9240 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY9240 International Rectifier 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY9240 Semelab P-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY9240 International Rectifier HEXFET Transistors Scan PDF
    IRFY9240C International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9240C Semelab P-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY9240C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY9240CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9240CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY9240CM International Rectifier Power MOSFET Original PDF
    IRFY9240CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY9240M International Rectifier 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY9240M International Rectifier POWER MOSFET THRU-HOLE (TO-257AA) Original PDF
    IRFY9240M International Rectifier HEXFET Transistors Scan PDF

    IRFY9240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HEXFET Power MOSFET P-Channel

    Abstract: IRFY9240C IRFY9240CM
    Text: Provisional Data Sheet No. PD 9.1295A IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200 Volt, 0.51Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF IRFY9240CM HEXFET Power MOSFET P-Channel IRFY9240C IRFY9240CM

    IRFY9240

    Abstract: SHD226410
    Text: SENSITRON SEMICONDUCTOR SHD226410 TECHNICAL DATA DATA SHEET 621, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -200 Volt, 0.5 Ohm, -7.7A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY9240 Series MAXIMUM RATINGS


    Original     		PDF SHD226410 IRFY9240 -250mA -15VDS SHD226410

    Untitled

    Abstract: No abstract text available
    Text: IRFY9240 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)7.7 I(DM) Max. (A) Pulsed I(D)4.9 @Temp (øC)100# IDM Max (@25øC Amb)30 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55


    Original     		PDF IRFY9240

    IRFY9240C

    Abstract: IRFY9240CM U 94a
    Text: PD - 91295B POWER MOSFET THRU-HOLE TO-257AA IRFY9240C,IRFY9240CM 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 Ω -9.4A Ceramic IRFY9240CM 0.51 Ω -9.4A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91295B O-257AA) IRFY9240C IRFY9240CM IRFY9240C IRFY9240C, -150A/ -200V, IRFY9240CM U 94a

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD226410 TECHNICAL DATA DATA SHEET 621, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -200 Volt, 0.5 Ohm, -7.7A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY9240 Series MAXIMUM RATINGS


    Original     		PDF SHD226410 IRFY9240 38www SHD226410 O-257

    IRFY9240C

    Abstract: No abstract text available
    Text: IRFY9240C Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 9.4A RDS(ON) = 0.51Ω Ω 1.0 (0.039)


    Original     		PDF IRFY9240C O257AB O257AB O220M) 13-Sep-02 IRFY9240C

    Untitled

    Abstract: No abstract text available
    Text: PD - 91295B POWER MOSFET THRU-HOLE TO-257AA IRFY9240C,IRFY9240CM 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240C 0.51 Ω -9.4A Ceramic IRFY9240CM 0.51 Ω -9.4A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91295B O-257AA) IRFY9240C IRFY9240CM IRFY9240C IRFY9240C, -150A/Â -200V,

    IRFY9240

    Abstract: IRFY9240C IRFY9240CM IRFY9240M mosfet 60a 200v
    Text: PD - 94199 POWER MOSFET THRU-HOLE TO-257AA IRFY9240,IRFY9240M 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number Rds(on) Id Eyelets IRFY9240 0.51 Ω -9.4A Glass IRFY9240M 0.51 Ω -9.4A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY9240 IRFY9240M IRFY9240 IRFY9240, -150A/ -200V, O-257AA IRFY9240C IRFY9240CM IRFY9240M mosfet 60a 200v

    IRFY9240

    Abstract: No abstract text available
    Text: IRFY9240 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 9.4A RDS(ON) = 0.51Ω Ω 1.0 (0.039)


    Original     		PDF IRFY9240 O257AB O257AB O220M) 13-Sep-02 IRFY9240

    HEXFET Power MOSFET P-Channel

    Abstract: IRFY9240C IRFY9240CM rg 96 rectifier
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1295A IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200 Volt, 0.51Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF IRFY9240CM HEXFET Power MOSFET P-Channel IRFY9240C IRFY9240CM rg 96 rectifier

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    SHD239608

    Abstract: shd239606
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM


    Original     		PDF O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    5S45S

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­


    OCR Scan     		PDF IRFY9240CM -200Volt, 5545S DD24541 5S45S

    Untitled

    Abstract: No abstract text available
    Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17


    OCR Scan     		PDF IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan     		PDF IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan     		PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD

    JANTX2N7334

    Abstract: irfy430
    Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6


    OCR Scan     		PDF irfg110 M0-036AB 2n7334 jantx2n7334 jantxv2n7334 irfg5110 irfg6110 2n7336 irfy430

    MO-D36AB

    Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
    Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for


    OCR Scan     		PDF MIL-S-19500 T0-254AA T0-204AA/AE MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542

    IRFY9120

    Abstract: diode ED 84 IRFY120 660B IRFV460 ISFV460D TO-257AB
    Text: Data Sheet No. PD-9.660B I3R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV4BO N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    OCR Scan     		PDF IRFV460 IRFY044IM) O-257AA IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 IRFY440 IRFY9120 diode ED 84 660B IRFV460 ISFV460D TO-257AB

    IRF1644

    Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
    Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.


    OCR Scan     		PDF 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140 10D05-10010. 10DF1100F8 10JF1-10JF4. 10JQ030-10JQ100. 1OJTF10-10JTF40 10MQ040-10MQ090. IRF1644 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003