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    IRFY340 Price and Stock

    International Rectifier IRFY340C

    Trans MOSFET N-CH 400V 8.7A 3-Pin(3+Tab) TO-257AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRFY340C 115
    • 1 $158.65
    • 10 $158.65
    • 100 $158.65
    • 1000 $158.65
    • 10000 $158.65
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    IRFY340 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY340 International Rectifier HEXFET Power Mosfet Original PDF
    IRFY340 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY340 International Rectifier HEXFET Transistors Scan PDF
    IRFY340 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY340C International Rectifier HEXFET Power Mosfet Original PDF
    IRFY340C Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY340C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY340CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY340CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY340CM International Rectifier Power MOSFET Original PDF
    IRFY340CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY340M International Rectifier 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY340M International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY340M International Rectifier HEXFET Transistors Scan PDF

    IRFY340 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFY340C

    Abstract: IRFY340CM MOSFETs. Rectifier
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1290B IRFY340CM HEXFET POWER MOSFET N-CHANNEL Product Summary 400 Volt, 0.55Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


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    PDF 1290B IRFY340CM IRFY340C IRFY340CM MOSFETs. Rectifier

    IRFY340

    Abstract: IRFY340C IRFY340CM IRFY340M
    Text: PD - 94189 POWER MOSFET THRU-HOLE TO-257AA IRFY340,IRFY340M 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY340 0.55 Ω 8.7A Glass IRFY340M 0.55 Ω 8.7A Glass HEXFET® MOSFET technology is the key to International


    Original
    PDF O-257AA) IRFY340 IRFY340M IRFY340 IRFY340, O-257AA IRFY340C IRFY340CM IRFY340M

    IRFY340

    Abstract: 87A DIODE
    Text: IRFY340 MECHANICAL DATA N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 BVDSS ID RDS(on) 10.41 10.92 13.39 13.64 16.38 16.89 10.41 10.67 12.70 19.05 1 2 3 400V 8.7A 0.55Ω FEATURES • 0.89 1.14


    Original
    PDF IRFY340 O-220 O-220M O-257AB) IRFY340 87A DIODE

    IRFY340

    Abstract: SHD2264 SHD226404
    Text: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. B Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 400 Volt, 0.55 Ohm, 6.9 A MOSFET • Low RDS on • Equivalent to IRFY340 Series • Add a C after SHD for ceramic eyelets


    Original
    PDF SHD226404 SHD2264 IRFY340 SHD2264 SHD226404

    Untitled

    Abstract: No abstract text available
    Text: IRFY340 MECHANICAL DATA N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 BVDSS ID RDS(on) 10.41 10.92 13.39 13.64 16.38 16.89 10.41 10.67 12.70 19.05 1 2 3 400V 8.7A 0.55 FEATURES • 0.89 1.14 •


    Original
    PDF IRFY340 O-220 O-220M O-257AB)

    Untitled

    Abstract: No abstract text available
    Text: PD - 91290C POWER MOSFET THRU-HOLE TO-257AA IRFY340C,IRFY340CM 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY340C 0.55 Ω 8.7A Ceramic IRFY340CM 0.55 Ω 8.7A Ceramic HEXFET® MOSFET technology is the key to International


    Original
    PDF 91290C O-257AA) IRFY340C IRFY340CM IRFY340C IRFY340C, O-257AA

    IRFY340C

    Abstract: No abstract text available
    Text: IRFY340C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 8.7A RDS(ON) = 0.55Ω Ω 1.0 (0.039)


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    PDF IRFY340C O257AB O257AB O220M) 13-Sep-02 IRFY340C

    IRFY340C

    Abstract: IRFY340CM
    Text: PD - 91290C POWER MOSFET THRU-HOLE TO-257AA IRFY340C,IRFY340CM 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY340C 0.55 Ω 8.7A Ceramic IRFY340CM 0.55 Ω 8.7A Ceramic HEXFET® MOSFET technology is the key to International


    Original
    PDF 91290C O-257AA) IRFY340C IRFY340CM IRFY340C IRFY340C, O-257AA IRFY340CM

    IRFY340C

    Abstract: IRFY340CM
    Text: Provisional Data Sheet No. PD 9.1290B IRFY340CM HEXFET POWER MOSFET N-CHANNEL Product Summary 400 Volt, 0.55Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original
    PDF 1290B IRFY340CM IRFY340C IRFY340CM

    irfy340

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. A Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.55 Ohm, 6.9 A MOSFET œ Low RDS on œ Equivalent to IRFY340 Series œ Add a C after SHD for ceramic eyelets


    Original
    PDF SHD2264 SHD226404 IRFY340 O-257

    IRFY340

    Abstract: No abstract text available
    Text: IRFY340 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 1 2 3 400V 6.9A Ω 0.55Ω 12.70 19.05 FEATURES 0.89


    Original
    PDF IRFY340 300ms, IRFY340

    IRFY340

    Abstract: SHD2264 SHD226404
    Text: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. A Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.55 Ohm, 6.9 A MOSFET œ Low RDS on œ Equivalent to IRFY340 Series œ Add a C after SHD for ceramic eyelets


    Original
    PDF SHD226404 SHD2264 IRFY340 250mA SHD2264 SHD226404

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


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    PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    SHD239608

    Abstract: shd239606
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM


    Original
    PDF O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original
    PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


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    PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    Untitled

    Abstract: No abstract text available
    Text: mi =Vr= INI IRFY340 SEM E LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 .70 5 .00 10.41 1 0.67 0.70 0.90 3.56 Dia. 3.81 V DSS 400V 6.9A 0.55ft ID(cont) 1 2 ^DS(on) FEATURES • HERMETICALLY SEALED T 0-220 METAL


    OCR Scan
    PDF IRFY340 O-220M 300ms,

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1290B International ICR Rectifier HEXFET PO W ER M O S FE T IRFY340CM N-CHANNEL Product Summary 400 Volt, 0.55Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­


    OCR Scan
    PDF 1290B IRFY340CM 6C731

    Untitled

    Abstract: No abstract text available
    Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17


    OCR Scan
    PDF IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan
    PDF IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan
    PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD

    JANTX2N7334

    Abstract: irfy430
    Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6


    OCR Scan
    PDF irfg110 M0-036AB 2n7334 jantx2n7334 jantxv2n7334 irfg5110 irfg6110 2n7336 irfy430

    MO-D36AB

    Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
    Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for


    OCR Scan
    PDF MIL-S-19500 T0-254AA T0-204AA/AE MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542