LCC-18
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD248305 Technical Data Datasheet 4195, Rev. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 500 Volt, 1.5 Ohm, 1.5A MOSFET • Fast Switching • Low RDS on • Electrically Equivalent to IRFE430 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
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SHD248305
IRFE430
SHD248305
LCC-18
LCC-18
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD248305 Technical Data Datasheet 4195, Rev. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 500 Volt, 1.5 Ohm, 1.5A MOSFET • Fast Switching • Low RDS on • Electrically Equivalent to IRFE430 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
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SHD248305
IRFE430
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IRFE430
Abstract: JANTX2N6802U JANTXV2N6802U LCC-18 step recovery diode 4.5v to 100v input regulator
Text: PD - 91719B IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTORS JANTXV2N6802U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/557] 500V, N-CHANNEL Product Summary Part Number IRFE430 BVDSS 500V RDS(on) 1.50Ω ID 2.5A The leadless chip carrier (LCC) package represents the
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91719B
IRFE430
JANTX2N6802U
JANTXV2N6802U
LCC-18)
MIL-PRF-19500/557]
electrical252-7105
IRFE430
JANTX2N6802U
JANTXV2N6802U
LCC-18
step recovery diode
4.5v to 100v input regulator
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IRF 725
Abstract: 2N6802U IRFE430 JANTX2N6802U JANTXV2N6802U rectifier diode for max 250v 1.5A
Text: Provisional Data Sheet No. PD - 9.1719 IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:MIL-PRF-19500/557] N-CHANNEL Ω , HEXFET 500Volt, 1.50Ω The leadless chip carrier LCC package represents the logical next step in the continual evolution of
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IRFE430
JANTX2N6802U
JANTXV2N6802U
MIL-PRF-19500/557]
500Volt,
IRF 725
2N6802U
IRFE430
JANTX2N6802U
JANTXV2N6802U
rectifier diode for max 250v 1.5A
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Untitled
Abstract: No abstract text available
Text: PD - 91719B IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTORS JANTXV2N6802U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/557] 500V, N-CHANNEL Product Summary Part Number IRFE430 BVDSS 500V RDS(on) 1.50Ω ID 2.5A The leadless chip carrier (LCC) package represents the
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91719B
IRFE430
JANTX2N6802U
JANTXV2N6802U
LCC-18)
MIL-PRF-19500/557]
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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2N6796
Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/557F
MIL-S-19500/557E
2N6796,
2N6796U,
2N6798,
2N6798U,
2N6800,
2N6800U,
2N6802,
2N6802U
2N6796
2N6796U
2N6798
2N6798U
2N6800
2N6800U
2N6802
2N6802U
c 2811 transistor
irff130 marking
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irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
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4246A
IRHG567110
MO-036AB)
IRHG563110
MO-036AB
O-254AA
22JGQ045SCV
irf5n5210sc
IRHNA57064SCS
IRHM597260
irf5n5210
irhna597160scs
irhf7110scs
IRHG57110
IRHNA57264SESCS
35CLQ045SCS
12CLQ150SCS
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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IRHNA57064SCS
Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5
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94046B
IRHNJ597230
IRHNJ593230
O-254AA
22JGQ045SCV
22GQ100SCV
25GQ045SCS
IRHNA57064SCS
IRHNJ597230SCS
IRHNJ9130SCS
IRHG6110SCS
IRHY7434
IRHE57130SCS
8CLJQ045SCV
IRHNJ57034SCS
irfy9230
35CLQ045SCS
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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ciss 200v
Abstract: IRFE310
Text: Search Results Part number search for devices beginning "IRF9140" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF9140 P-Channel TO3 100V 18A 125W
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IRF9140"
IRF9140
IRF9140-JQR-B
IRF9140SMD
IRF9140SMD-JQR-B
O276AB)
1400pF
ciss 200v
IRFE310
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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MOSFET cross-reference
Abstract: 2N6798 557h 2N6796 2N6796U 2N6798U 2N6800 2N6800U 2N6802 2N6802U
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2010. MIL-PRF-19500/557H 24 June 2010 SUPERSEDING MIL-PRF-19500/557G 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/557H
MIL-PRF-19500/557G
2N6796,
2N6796U,
2N6798,
2N6798U,
2N6800,
2N6800U,
2N6802,
2N6802U
MOSFET cross-reference
2N6798
557h
2N6796
2N6796U
2N6798U
2N6800
2N6800U
2N6802
2N6802U
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents
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IRFE430
JANTX2N6802U
JANTXV2N6802U
MIL-PRF-19500/557]
500Volt,
46SS452
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1719 International I R Rectifier IRFE430 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:MIL-PRF-19500/557] N -C H A N N E L 500Vo It, 1.50i2, HEXFET Product Summary T he le a d le ss c h ip c a rrie r LC C p a cka g e re p re se n ts
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IRFE430
JANTX2N6802U
JANTXV2N6802U
MIL-PRF-19500/557]
500Vo
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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n10 smd
Abstract: No abstract text available
Text: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2
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IRFE024
IRFE110
IRFE120
IRFE130
IRFE210
IRFE220
IRFE230
IRFE310
IRFE320
IRFE330
n10 smd
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IRF540
Abstract: T0-220
Text: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722
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IRF452
IRF453
IRF460
IRF520
IRF521
IRF522
IRF523
IRF530
IRF531
IRF532
IRF540
T0-220
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Untitled
Abstract: No abstract text available
Text: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number
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IRHM7250
IRHM3250
IRHM4250
IRHM8250
JANSR2N7269
JANSF2N7269
JANSG2N7269
JANSH2N7269
IRHM7260
IRHM8260
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Untitled
Abstract: No abstract text available
Text: TOR IRFE Series Devices IRFE Series Data Sheet The IRFE Data Sheet describes 19 devices, 12 N-Channel and 7 P-Channel, all contained in the LCC package. This data sheet is arranged to show common tabular and graphical information between devices. alphabetical order. W here the information is device
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IRFE9210
IRFE9220
IRFE9230
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