IRF9140
Abstract: No abstract text available
Text: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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93976B
IRF9140
O-204AA/AE)
-100V
-100A/
-100V,
--TO-204AA
IRF9140
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Untitled
Abstract: No abstract text available
Text: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)
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IRF9140
300ms,
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IRF9140
Abstract: TA17521 TB334
Text: IRF9140 Data Sheet February 1999 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF9140
-100V,
TA17521.
O-204AA
IRF9140
TA17521
TB334
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD219409 TECHNICAL DATA DATA SHEET 682, REV - Formerly part number SHD2199 HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.2 Ohm, -18A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9140 Series
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SHD2199
SHD219409
IRF9140
CHARACTERISTIC221
SHD219409
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Untitled
Abstract: No abstract text available
Text: PD - 93976 IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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O-204AA/AE)
IRF9140
-100V
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IRF9140
Abstract: No abstract text available
Text: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)
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IRF9140
300ms,
IRF9140
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.2 Ohm, -18A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9140 Series
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SHD218409
SHD218409A
SHD218409B
IRF9140
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ciss 200v
Abstract: IRFE310
Text: Search Results Part number search for devices beginning "IRF9140" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF9140 P-Channel TO3 100V 18A 125W
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IRF9140"
IRF9140
IRF9140-JQR-B
IRF9140SMD
IRF9140SMD-JQR-B
O276AB)
1400pF
ciss 200v
IRFE310
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IRF9140
Abstract: No abstract text available
Text: PD - 93976A IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF9140 BVDSS -100V RDS(on) 0.2Ω ID -18A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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3976A
IRF9140
O-204AA/AE)
-100V
electrica52-7105
IRF9140
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IRF9140
Abstract: SHD219409 SHD2199
Text: SENSITRON SEMICONDUCTOR SHD219409 TECHNICAL DATA DATA SHEET 682, REV - Formerly part number SHD2199 HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.2 Ohm, -18A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9140 Series
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SHD219409
SHD2199
IRF9140
-250mA
SHD219409
SHD2199
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IRF9140
Abstract: P channel Mosfets P-CHANNEL SHD218509B
Text: Part Number Search: MOSFETs Product Specifications MOSFETs, P Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style -100 -18 -11 125 0.2 @ -11 1 IRF9140
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IRF9140
SHD218509B
IRF9140
P channel Mosfets
P-CHANNEL
SHD218509B
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Untitled
Abstract: No abstract text available
Text: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)
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IRF9140
300ms,
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IRF9140
Abstract: SHD218409 SHD218409A SHD218409B
Text: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • -100 Volt, 0.2 Ohm, -18A MOSFET • Electrically Isolated Hermetically Sealed • Low RDS on • Equivalent to IRF9140 Series
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SHD218409
SHD218409A
SHD218409B
IRF9140
SHD218409
SHD218409A
SHD218409B
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l 9143
Abstract: irf9140
Text: IRF9140, IRF9141, IRF9142, IRF9143 S E M I C O N D U C T O R -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -19A and -15A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF9140,
IRF9141,
IRF9142,
IRF9143
-100V,
TA17521.
l 9143
irf9140
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IRF9
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD239409 TECHNICAL DATA DATA SHEET 4051, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.2 Ohm, -18A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9140 Series MAXIMUM RATINGS
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SHD239409
IRF9140
IRF9
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SHD218409A
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.2 Ohm, -18A MOSFET Electrically Isolated Hermetically Sealed Low RDS on Equivalent to IRF9140 Series
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SHD218409
SHD218409A
SHD218409B
IRF9140
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Untitled
Abstract: No abstract text available
Text: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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93976B
IRF9140
O-204AA/AE)
-100V
-100A/Â
-100V,
O-204AA
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1RF9540
Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
Text: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY
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D0GS40Ö
IRF9140/
IRFP9140/9141
IRF9540/
9541Z
IRF/IRFP9140,
IRF9540
IRF/IRFP9141,
IRF9541
IRF/IRFP9142,
1RF9540
l 9143
irf 409
IRF 9540
L 9141
IRF95XX
IRF high current p-channel
IRF9140
IRF9140 TO 220
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diode 6.2
Abstract: No abstract text available
Text: lili SEM E IRF9140 LAB MECHANICAL DATA D im e nsio ns in mm inches P-CHANNEL POWER MOSFET -1 0 0 V V DSS -1 8 A I D(cont) 0.2Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE 20.32 (0.800) 18.80 (0.740) dia. • SIMPLE DRIVE REQUIREMENTS
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IRF9140
500mJ
diode 6.2
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irf9140
Abstract: No abstract text available
Text: IRF9140, IRF9141, IRF9142, IRF9143 HARRIS S E M I C O N D U C T O R •19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -1 9A and -1 5A, -80V and -1 00V • High Input Im pedance These are P-Channel enhancement mode silicon gate
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IRF9140,
IRF9141,
IRF9142,
IRF9143
-100V,
TA17521.
RF9142,
irf9140
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1RF9140
Abstract: F9142 IRF high current p-channel lts 543 pin diagram F9140 IRF 543 MOSFET
Text: H A R R I S IRF9140, IRF9141 IRF9142, IRF9143 Avalanche Energy Rated P-Channel Power MOSFETs Ja n u ary 1 994 Package Features T O -2 0 4 A A BOTTOM VIEW • -19 A and -15A , -80 V and -100V • rQS ON = 0 .2 0 0 and 0.30H DRAIN (FLANGE) SOURCE • Single Pulse Avalanche Energy Rated
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IRF9140,
IRF9141
IRF9142,
IRF9143
-100V
IRF9141,
IRF9142
IRF9143
1RF9140,
1RF9140
F9142
IRF high current p-channel
lts 543 pin diagram
F9140
IRF 543 MOSFET
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TA17521
Abstract: IRF9140
Text: HAJims S IRF9140, IRF9141, IRF9142, IRF9143 Semiconductor y y -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -19A and -15A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate
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IRF9140,
IRF9141,
IRF9142,
IRF9143
-100V,
TA1752E
RF9142,
IRF9143
TA17521
IRF9140
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IRF9140SM
Abstract: No abstract text available
Text: Illl iF t i mi IRF9140SM SEME LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 2.0 3.5 n a ^D(cont) 3.0 3.5 -100V -14A 0.020Û VDss 0.25 M R DS(on) <£> FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE n • SM ALL FOOTPRINT - EFFICIENT USE OF
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IRF9140SM
-100V
220SM
-100A/
300ms,
IRF9140SM
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f9140
Abstract: IRF9140 IRF9141 IRF9142 IRF9143
Text: Rugged Power M O IRF9140, IRF9141 IRF9142, IRF9143 File Number 2278 Avalanche-Energy-Rated P-Channel Power MOSFETs -19 A and -15 A, -60 V and -100 V fDSion» = 0.20 O and 0.30 fì TERMINAL DIAGRAM
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IRF9140,
IRF9141
IRF9142,
IRF9143
IRF9141,
IRF9143
F9140
IRF9140
IRF9142
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