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    HYUNDAI TV CIRCUITS Search Results

    HYUNDAI TV CIRCUITS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    HYUNDAI TV CIRCUITS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PST34

    Abstract: No abstract text available
    Text: H YU N D AI H Y 5 1 1 6 1 6 4 B S e r ie s 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		16-bit HY5116164B 16-bit. 1ADS7-10-MAY95 HY5116164 HY5116164BTC PST34 PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51161 HY5116100Ato 9-10-MAY94 HY5116100A HY5116100AJ HY5116100ASU HY5116100AT HY51161OOASLT HY5116100AR PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM584000B M-Series «HYUNDAI 4M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000B is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0 .22/ jF decoupling capacitors are mounted under each DRAMs.


    OCR Scan     		HYM584000B HY5117400 HYM584000BM/BLM 1BC0S-11-MARM 781MIN. 1BC05-11-MAR94 4b750flfl PDF

    HY5RC1809

    Abstract: concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53
    Text: HY5RC1809 / 6408 Series “HYUNDAI 18Mb 2Mx9 / 64Mb(8Mx8), Concurrent RDRAM Preliminary Overview The 18/64M b C o n cu rre n t R am bus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M words by 9 bits or 8M words by 8 bits. They are capable of bursting unlimited length of


    OCR Scan     		18/64M SVP-32 HY5RC1809 concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53 PDF

    5DOF

    Abstract: A12U HY628400 HAB 20-S
    Text: HY628400 Series » H Y U N D A I 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY628400 512Kx 288x8-bits speed-55/70/85/100ns 00b353 1DE01 -11-MAY95 5DOF A12U HAB 20-S PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM540400 Series 4M X 40<bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each


    OCR Scan     		HYM540400 40-bit HY5116400 22/iF HYM540400M/LM/TM/LTM HYM540400MG/LMG/TMG/LTMG HYM540400M/MG HYM54Ã 400TM/TMG PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM591000C HY531000A 22/iF HYM591OOOCM/CLM 1BB08-10-MAYW 4b750Ã 07IV7B1 PDF

    A17a

    Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16
    Text: HY628400 Series •HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY628400 512KX 288x8-bits speed-55/70/85/100ns 1DE01 -11-MAY95 A17a HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A tsop 338 IR 1A13 DA16 PDF

    IN2804

    Abstract: No abstract text available
    Text: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM539400 39-bit HY5116400 HYM539400MG/ 1CE10-10-MAY94 DQD3S35 IN2804 PDF

    l9735

    Abstract: No abstract text available
    Text: HY62256B- I Series “H Y U N D A I 32Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62256B/ HY62256B-I is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. It is


    OCR Scan     		HY62256B- HY62256B/ HY62256B-I 32Kx8bit 330mil 28pin l9735 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM532100A 32-blt 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG M532100A 1CC03-01-FEB94 4b75DBB PDF

    Hyundai Semiconductor

    Abstract: hy27c64-20 HY27C64A
    Text: HY27C64 Æ HYUNDAI S E M IC O N D U C T O R DESCRIPTION 8192x8-B it CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where


    OCR Scan     		HY27C64 8192x8-Bit 536-bit HY27C64. 150/200/300ns 150ns 200ns 300ns K29793/4 Hyundai Semiconductor hy27c64-20 HY27C64A PDF

    Untitled

    Abstract: No abstract text available
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


    Original     		HY29F040A r-61400755 S-128 PDF

    29F040A

    Abstract: hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


    Original     		HY29F040A S-128 29F040A hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve


    OCR Scan     		256KX 16-bit HY51V4260B 400mil 40pin 40/44pin 1AC26-00-MAY94 4b75Gflfl PDF

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands


    OCR Scan     		HY29F040 32-Pin P-121, T-121, R-121 P-12E, PDF

    HY5118160

    Abstract: No abstract text available
    Text: 'HYUNDAI HYM536220 W-Series 2M X 36-b¡l CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		HYM536220 36-bit HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG DQ0-DQ35) 1C006-01-SEP94 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V16400A HY51V16400A HY51V16400Ato 4b75Dfifl 1AD31-00-MAY95 0QG441D HY51V16400AJ HY51V16400ASU PDF

    Untitled

    Abstract: No abstract text available
    Text: •'H Y U N D A I HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mourlted for


    OCR Scan     		HYM532220A 32-bit HY5118160B HYM532220AW/SLW/TW/SLTW HYM532220AWG/SLWG 880mW 825mW 770mW PDF

    C551

    Abstract: HY29F040A P55i
    Text: “H Y U N D A I HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 55 ns access tim e Com patible with JEDEC-Standard Comm ands


    OCR Scan     		HY29F040A 32-Pin HY29F040A C551 P55i PDF

    Untitled

    Abstract: No abstract text available
    Text: HY534256 Series "HYUNDAI 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY534256 256KX 300mil 1AB03-30-M 4tj75Dflfl QD02353 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y 5116410 S e rie s 4M X 4-blt CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		HY5116410 1AD03-10-APR93 4b7500fl HY5116410JC HY5116410UC HY5116410TC HY5116410LTC PDF

    Untitled

    Abstract: No abstract text available
    Text: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 15 mA typical active read current


    Original     		HY29F080 S-128 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V17805B Series •«HYUNDAI 2M X 8-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V17805B is the new generation and fast dynamic RAM organized 2,097,152x8-bit. The HY51V17805B utilized Hyundai’s CMOS silicon gate process technology as well as advenced circuit techniques to prove wide


    OCR Scan     		HY51V17805B 152x8-bit. HY51V17805B 1AD62-00-MAY95 HY51V17805BJC HY51V17805BTC HY51V17805BRC PDF