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    HY5117400 Price and Stock

    SK Hynix Inc HY5117400JC-70

    FAST PAGE DRAM, 4MX4, 70NS, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5117400JC-70 32
    • 1 $9
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
    • 10000 $4.5
    		Buy Now

    hyn HY5117400BT60

    4M X 4, FAST PAGE MODE Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY5117400BT60 54
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    HY5117400 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY5117400C Hyundai 4Mx4, Fast Page mode Original PDF

    HY5117400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYM532810BM

    Abstract: HY5117400B HYM532810B HYM532810BMG
    Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		PDF HYM532810B 8Mx32 8Mx32-bit HY5117400B HYM532810BM HYM532810BMG 72-Pin

    HY5117400B

    Abstract: HY514100A
    Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		PDF HYM536410B 4Mx36 4Mx36-bit HY5117400B HY514100A HYM536410BM HYM536410BMG 72-Pin

    HY5117400B

    Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
    Text: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		PDF HYM536810D 8Mx36 8Mx36-bit HY5117400B HY514100A HYM536810DM HYM536810DMG 72-Pin

    HYM532410BM

    Abstract: HY5117400B HYM532410B HYM532410BMG HYM532410
    Text: HYM532410B M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410B M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		PDF HYM532410B 4Mx32 4Mx32-bit HY5117400B HYM532410BM HYM532410BMG 72-Pin HYM532410

    1CE13-10-DEC94

    Abstract: HY5117400A
    Text: HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted


    Original     		PDF HYM532410A 4Mx32-bit 32-bit HY5117400A HYM532410AAM/ASLM/ATM/ASLTM HYM532410AMG/ASLMG/ATMG/ASLTMG 1CE13-10-DEC94 72pin 1CE13-10-DEC94 HY5117400A

    Untitled

    Abstract: No abstract text available
    Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		PDF HYM532810C 8Mx32 8Mx32-bit HY5117400C HYM532810CM HYM532810CMG 72-Pin

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR

    HYM53

    Abstract: No abstract text available
    Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM536A810A 36-bit HYM536A81OA HY5117400A HYM536A81OAM/ASLM HYM536A810AMG/ASLMG HYM536A800A/ASL 1CF16-10-AUG95 HYM53

    HYM536410MG

    Abstract: No abstract text available
    Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling


    OCR Scan     		PDF HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 1AD27-10-MAY94 HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC

    HYM532810

    Abstract: HY5117400 HYM53
    Text: ••HYUNDAI HYM532810 M-Series 8M X 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532810 is a 8M x 32-bit Fast page mode C M O S DRAM module consisting of sixteen HY5117400 in 24/28 pin S O J on a 72 pin glass-epoxy printed circuit board. 0.22fi? decoupling capacitor is mounted for each DRAM,


    OCR Scan     		PDF HYM532810 32-blt 32-bit HY5117400 HYM532810M/LM HYM532810MG/LMG 1CF02-10-JUN94 4b75D 0D03577 HYM53

    hym536810

    Abstract: HYM53
    Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.


    OCR Scan     		PDF HYM536810 36-blt 36-bit HY5117400 HY514100A 22fiF HYM53681OM/LM/TM/LTM HYM53681OMG/LMG/TMG/LTMG HYM53681OT/LT HYM53

    M53241

    Abstract: No abstract text available
    Text: HYM532410 N-Series •HYUN DAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5117400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0 22^F decoupling capacitor is


    OCR Scan     		PDF HYM532410 32-bit HY5117400A HYM532410TNG/SLTNG 32va24 004J1 1DE02-10-AUG95 M53241

    Untitled

    Abstract: No abstract text available
    Text: HYM572A410A N-Series “H Y U N D A I 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A410A is a 4M x 72-bit Fast page m ode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.


    OCR Scan     		PDF HYM572A410A 72-bit HY5117400A 16-bit HYM572A410ATNG/ASLTNG DQ0-DQ72) 1EE11-10-DEC94

    PD1-P04

    Abstract: No abstract text available
    Text: “ H Y U M P f t l • HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8M x32-bit Fast Page mode CMOS DRAM m odule consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1


    OCR Scan     		PDF HYM532810C 8Mx32 x32-bit HY5117400C HYM532810CM HYM532810CMG 72-Pln 72iMiN. PQ062 PD1-P04

    Untitled

    Abstract: No abstract text available
    Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin


    OCR Scan     		PDF 8Mx36-blt HYM536810A 36-bit HY5117400A HY514100A HYM53681OAM/ASLM/ATM/ASLTM HYM53681OAMG/ALMG/ATMG/ALTMG 1CE13-10-DEC94 HYM536810AM HYM53681

    HY5117400CJ

    Abstract: MAX7523
    Text: - « y u n d â « HY5117400C,HY5116400C T 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117400C HY5116400C A0-A11) HY5117400CJ MAX7523

    HYUNDAI SEMICONDUCTOR

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM540410 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540410 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5117400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM540410 40-bit HY5117400 HYM54041OM/LM/TM/LTM HYM54041OMG/LMG/TMG/LTMG HYM540410M/LM HYM54041 HYUNDAI SEMICONDUCTOR

    PP-T20

    Abstract: HY5117400B bel power QBS
    Text: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400B HY5117400B Y5117400B 4b750fl 1AD46-00-MAY9S GG0457E HY5117400BJ HY5117400BSLJ PP-T20 bel power QBS

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling


    OCR Scan     		PDF HYM594000B HY5117400 HY514100A 22jiF HYM594000BM/BLM 1BC06-11-MAR94 50fifi

    Untitled

    Abstract: No abstract text available
    Text: » « Y I I H D W I HYM532810A M-Series 8Mx32-blt CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SQJ or TSOPfl on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM532810A 8Mx32-blt 32-bit HY5117400A HYM532810AM/ASLM/ATM/ASLTM HYM53281OAMG/ALMG/ATMG/ALTMG 72pin HYM53281OA/AL HYM532810AT/ALT

    MAX7523

    Abstract: No abstract text available
    Text: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.


    OCR Scan     		PDF HY5117400A, HY5116400A HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT HY5116400AJ Y5116400ASLJ HY5116400AT HY5116400ASLT MAX7523

    HY5116400BT

    Abstract: No abstract text available
    Text: -HYUNDAI • HY5117400B, HY5116400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117400B, HY5116400B A0-A11) HY5116400BT