HY5118164B
Abstract: HY5118164BJC HY5116164B
Text: HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5118164B
HY5116164B
1Mx16,
16-bit
1Mx16
HY5118164BJC
HY5116164B
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IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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MB81141621
MB81141622
MB81G8322
MB81116421
TC59R1608
2ns500MHz
TC59R0808
IBM025161LG5D60
gm72v16821
MD908
KM48S2020
TC59R1809
GM72V1682
KM4232W259Q60
KM416S1120A
IBM025171LG5D-70
KM44S4020AT
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Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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16-bit
HY5116164B
16-bit.
HY5116164B
1ADS7-10-MAY95
HY5116164BJC
HY5116164BSLJC
HY5116164BTC
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HY5116164B
Abstract: HY5116164BJC wx19
Text: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116164B
16-bit
16-bit.
1AOS7-10-MAY95
HY5116164BJC
HY5116164BSLJC
wx19
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TIME03
Abstract: No abstract text available
Text: -H YU M Dfll -• HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5118164B
HY5116164B
1Mx16,
16-bit
DG0-DQ15)
TIME03
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PST34
Abstract: No abstract text available
Text: H YU N D AI H Y 5 1 1 6 1 6 4 B S e r ie s 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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PDF
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16-bit
HY5116164B
16-bit.
1ADS7-10-MAY95
HY5116164
HY5116164BTC
PST34
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Untitled
Abstract: No abstract text available
Text: • HY UNDAI HYM564104 X-Series 1M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564104 is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY5116164B in 42/42pin SOJ, two 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22[iF
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HYM564104
64-bit
HY5116164B
42/42pin
16-bit
HYM564104XG/SLXG
A0-A11
DQ0-DQ63)
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Untitled
Abstract: No abstract text available
Text: HYM564204 X-Series • H Y U K D / V I 2M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564204 is a 2M x 64-bit EDO mode CMOS DRAM module consisting ot eight HY5116164B in 42/42pin SOJ, two 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF
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HYM564204
64-bit
HY5116164B
42/42pin
16-bit
HYM564204XG/SLXG
A0-A11
DQ0-DQ63)
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1MX16BIT
Abstract: 16MX1
Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE
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256Kx4-bit,
1MX16BIT
16MX1
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A8303
Abstract: HY5118164BSLJC HY5118164B 5118164B marking da
Text: •HYUNDAI HY5118164B>HY51161646 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells
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HY5118164B
HY51161646
HY5118164BJC
HY5118164BSLJC
HY5118164BTC
HY5118164BSLTC
HY5116164BJC
HY5116164BSLJC
HY5116164BTC
HY5116164BSLTC
A8303
5118164B
marking da
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BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
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HY531000A.
HY534256A.
16-bit.
HY5216257.
x16-bit.
DB101-20-MAY95
BEDO RAM
hy5118160b
HY512264
HY5117404
HY5118164B
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HY5116400BT
Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC
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256KX4)
HY531000AJ
HY531000ALJ
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
HY512260SLJC
HY512264JC
HY512264LJC
HY5116400BT
HY5117400CJ
50-PIN
HY5117804BT
TSOP-II 44
26-PIN
HY5118160BJ
hy51v65804
HY5117400BJ
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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Hy5118164B
Abstract: hy51181648 HY5118164C HY5118164
Text: •HYUNDAI H Y 5 1 1 8 1 6 4 B .H Y 5 1 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process
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OCR Scan
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HY5118164B
HY5116164B
1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
1Mx16
hy51181648
HY5118164C
HY5118164
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