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    HY5116400 Price and Stock

    SK Hynix Inc HY5116400CJ-60DR

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    Bristol Electronics HY5116400CJ-60DR 275
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    hyn HY5116400CT60

    4M X 4, FAST PAGE MODE Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY5116400CT60 712
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    HY5116400 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY5116400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY5116400CJ-50 Hynix Semiconductor DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 26-Pin Original PDF
    HY5116400CJ-60 Hynix Semiconductor DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 26-Pin Original PDF
    HY5116400CJ-70 Hynix Semiconductor DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 26-Pin Original PDF
    HY5116400CSLJ-50 Hynix Semiconductor DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 26-Pin Original PDF
    HY5116400CSLT-50 Hynix Semiconductor DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 26-Pin Original PDF
    HY5116400CSLT-60 Hynix Semiconductor DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 26-Pin Original PDF
    HY5116400CSLT-70 Hynix Semiconductor DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 26-Pin Original PDF
    HY5116400CT-50 Hynix Semiconductor DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 26-Pin Original PDF

    HY5116400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYM564400A

    Abstract: No abstract text available
    Text: HYM564400A N-Series 4Mx64-bit CMOS DRAM MODULE DESCRIPTION The HYM564400A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY5116400A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glassepoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The


    Original     		PDF HYM564400A 4Mx64-bit 64-bit HY5116400A 16-bit HYM564400ANG/ATNG/ASLNG/ASLTNG 110mW 198mW A0-A11

    HY5117400C

    Abstract: HY5117400CJ
    Text: HY5117400C,HY5116400C 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5117400C HY5116400C HY5117400CJ

    HY5117400C

    Abstract: HY5117400CJ
    Text: HY5117400C,HY5116400C 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5117400C HY5116400C 10/Sep HY5117400CJ

    socket, 72 pin, simm

    Abstract: No abstract text available
    Text: HYM572A400A N-Series 4Mx72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM572A400ATNG/ASLTNG is


    Original     		PDF HYM572A400A 4Mx72-bit 72-bit HY5116400A 16-bit HYM572A400ATNG/ASLTNG 121mW 220mW A0-A11 socket, 72 pin, simm

    HY5117400B

    Abstract: HY5116400B HY5117400 4Mx4 DRAM
    Text: HY5117400B,HY5116400B 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5117400B HY5116400B HY5116400B HY5117400 4Mx4 DRAM

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC

    Untitled

    Abstract: No abstract text available
    Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM536400B 36-bit HY5116400 HYM536400BM/BLM HYM536400BMG/BLMG 1CE05-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM540A400 M-Series 4M x 40-blt CMOS DRAM MODULE PREUMINARY DESCRIPTION The HYM540A400 is a 4M x 40-blt Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22^ F decoupling capacitor Is mounted for


    OCR Scan     		PDF HYM540A400 40-blt HY5116400 HYM540A400M/LM/TM/LTM HYM540A400MG/LMG/TMG/LTMG HYM540400M/MG HYM540400TM/TMG 1CE08-01-FEB94

    HY5116400

    Abstract: I3101A Hyundai Semiconductor dram
    Text: HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400 Schottk160) 2-10-A HY5116400JC HY5116400LJC HY5116400TC I3101A Hyundai Semiconductor dram

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HY5116400 Series 4M x 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400 1AD02-10-MAY94 HY5116400JC HY5116400UC HY5116400TC HY5116400LTC

    HY5117400CJ

    Abstract: MAX7523
    Text: - « y u n d â « HY5117400C,HY5116400C T 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117400C HY5116400C A0-A11) HY5117400CJ MAX7523

    MAX7523

    Abstract: No abstract text available
    Text: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.


    OCR Scan     		PDF HY5117400A, HY5116400A HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT HY5116400AJ Y5116400ASLJ HY5116400AT HY5116400ASLT MAX7523

    Untitled

    Abstract: No abstract text available
    Text: • HSEMICONDUCTOR YUNDAI HYM540400 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5116400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22/j F decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM540400 40-bit HY5116400 HYM540400M/LM/TM/LTM HYM540400MG/LMG/TMG/LTMG HYM540400M/MG HYM540400TM/TMG

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM H Y U N D A I DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit The HY5116400A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400A 1A023-10-MAY95 HY5116400AJ HY5116400ASLJ HY5116400AT HV51164CX HY5116400AR

    HY5116400A

    Abstract: No abstract text available
    Text: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400A 04711JOOl 43c12 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM540400 Series 4M X 40<bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each


    OCR Scan     		PDF HYM540400 40-bit HY5116400 22/iF HYM540400M/LM/TM/LTM HYM540400MG/LMG/TMG/LTMG HYM540400M/MG HYM54Ã 400TM/TMG

    TAA 691

    Abstract: No abstract text available
    Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116400A HY5116400A HY5116400Ato 1AD23-10-MAY94 HY5116400AJ HY5116400ASU HY5116400Ã HY5116400ASLT TAA 691

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI HYM572A400A N-Series 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOP-ll and two 16-bit BiCMOS line drivers in TSSOP on a t68 pin glass-epoxy printed circuit board.


    OCR Scan     		PDF HYM572A400A 72-bit HY5116400A 16-bit HYM572A400ATNG/ASLTNG 121mW 220mW A0-A11

    CH371

    Abstract: No abstract text available
    Text: " H Y U H D ftl HYM572A400A N-Series 4Mx72-btt CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOPII and two 16-bit BiCMOS tin driver in TSSOP on a 168 pin glass-epoxy


    OCR Scan     		PDF HYM572A400A 4Mx72-btt 72-bit HY5116400A 16-bit 22nFdecoupiing HYM572A400ATNG/ASLTNG 121mW 220mW CH371

    AY83

    Abstract: TCA 810 KA5 capacitor
    Text: H Y U ND A I SEMICONDUCTOR HYM536400B Series 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CM O S DRAM module consisting of nine HY5116400 In 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22ftF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM536400B 36-bit HY5116400 22ftF HYM536400BM/BLM HYM536400BMG/BLMG 1CE05-00-MAY93 AY83 TCA 810 KA5 capacitor

    Untitled

    Abstract: No abstract text available
    Text: HY5116400 Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY5116400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400 1AD02-10-MAV94 4b750fifi HY5116400JC HY5116400UC

    IN2804

    Abstract: No abstract text available
    Text: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM539400 39-bit HY5116400 HYM539400MG/ 1CE10-10-MAY94 DQD3S35 IN2804

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM564400A N-Series 4M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564400A is a 4M x 64-brt Fast page mode CMOS DRAM module consisting of sixteen HY5116400A in 24/28 pin SOJ or TSOF-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit


    OCR Scan     		PDF HYM564400A 64-bit 64-brt HY5116400A 16-bit HYM564400ANGMTNGVASLNGyASLTNG 110mW 198mw A0-A11