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    Abstract: No abstract text available
    Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400A HY51V16400A HY51V16400Ato 4b75Dfifl 1AD31-00-MAY95 0QG441D HY51V16400AJ HY51V16400ASU

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    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400A HY51V16400A HY51V16400Ato 1AD31-00-MAY94 4b750flfl HY51V16400AJ HY51V16400ASLJ HY51V16400AT HY51V16400ASLT

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    Abstract: No abstract text available
    Text: • H Y U N D A I HY51V16400A Series 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400A HY51V16400Ato such300 1AD31-00-MAY94 HY51V16400AJ HY51V16400ASLJ HY51V16400AT 8500K25