Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HY5117400 Search Results

    SF Impression Pixel

    HY5117400 Price and Stock

    SK Hynix Inc HY5117400JC-70

    FAST PAGE DRAM, 4MX4, 70NS, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5117400JC-70 32
    • 1 $9
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
    • 10000 $4.5
    		Buy Now

    hyn HY5117400BT60

    4M X 4, FAST PAGE MODE Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY5117400BT60 54
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    HY5117400 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY5117400C Hyundai 4Mx4, Fast Page mode Original PDF

    HY5117400 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR PDF

    HYM53

    Abstract: No abstract text available
    Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each


    OCR Scan     		HYM536A810A 36-bit HYM536A81OA HY5117400A HYM536A81OAM/ASLM HYM536A810AMG/ASLMG HYM536A800A/ASL 1CF16-10-AUG95 HYM53 PDF

    HYM536410MG

    Abstract: No abstract text available
    Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling


    OCR Scan     		HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A HY5117400A 1AD27-10-MAY94 HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC PDF

    HYM532810

    Abstract: HY5117400 HYM53
    Text: ••HYUNDAI HYM532810 M-Series 8M X 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532810 is a 8M x 32-bit Fast page mode C M O S DRAM module consisting of sixteen HY5117400 in 24/28 pin S O J on a 72 pin glass-epoxy printed circuit board. 0.22fi? decoupling capacitor is mounted for each DRAM,


    OCR Scan     		HYM532810 32-blt 32-bit HY5117400 HYM532810M/LM HYM532810MG/LMG 1CF02-10-JUN94 4b75D 0D03577 HYM53 PDF

    hym536810

    Abstract: HYM53
    Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.


    OCR Scan     		HYM536810 36-blt 36-bit HY5117400 HY514100A 22fiF HYM53681OM/LM/TM/LTM HYM53681OMG/LMG/TMG/LTMG HYM53681OT/LT HYM53 PDF

    HYM532810BM

    Abstract: HY5117400B HYM532810B HYM532810BMG
    Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532810B 8Mx32 8Mx32-bit HY5117400B HYM532810BM HYM532810BMG 72-Pin PDF

    M53241

    Abstract: No abstract text available
    Text: HYM532410 N-Series •HYUN DAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5117400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0 22^F decoupling capacitor is


    OCR Scan     		HYM532410 32-bit HY5117400A HYM532410TNG/SLTNG 32va24 004J1 1DE02-10-AUG95 M53241 PDF

    HY5117400A

    Abstract: No abstract text available
    Text: ••H Y U N D A I HY5117400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit, The HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A 1AD27-10-M HY5117400AJ HY5117400ASU HY5117400AT HY5117400ASLT PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM572A410A N-Series “H Y U N D A I 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A410A is a 4M x 72-bit Fast page m ode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.


    OCR Scan     		HYM572A410A 72-bit HY5117400A 16-bit HYM572A410ATNG/ASLTNG DQ0-DQ72) 1EE11-10-DEC94 PDF

    PD1-P04

    Abstract: No abstract text available
    Text: “ H Y U M P f t l • HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8M x32-bit Fast Page mode CMOS DRAM m odule consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1


    OCR Scan     		HYM532810C 8Mx32 x32-bit HY5117400C HYM532810CM HYM532810CMG 72-Pln 72iMiN. PQ062 PD1-P04 PDF

    Untitled

    Abstract: No abstract text available
    Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin


    OCR Scan     		8Mx36-blt HYM536810A 36-bit HY5117400A HY514100A HYM53681OAM/ASLM/ATM/ASLTM HYM53681OAMG/ALMG/ATMG/ALTMG 1CE13-10-DEC94 HYM536810AM HYM53681 PDF

    HY5117400CJ

    Abstract: MAX7523
    Text: - « y u n d â « HY5117400C,HY5116400C T 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		HY5117400C HY5116400C A0-A11) HY5117400CJ MAX7523 PDF

    PP-T20

    Abstract: HY5117400B bel power QBS
    Text: HY5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The HY5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400B HY5117400B Y5117400B 4b750fl 1AD46-00-MAY9S GG0457E HY5117400BJ HY5117400BSLJ PP-T20 bel power QBS PDF

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling


    OCR Scan     		HYM594000B HY5117400 HY514100A 22jiF HYM594000BM/BLM 1BC06-11-MAR94 50fifi PDF

    HY5117400B

    Abstract: HY514100A
    Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		HYM536410B 4Mx36 4Mx36-bit HY5117400B HY514100A HYM536410BM HYM536410BMG 72-Pin PDF

    HY5117400B

    Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
    Text: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed


    Original     		HYM536810D 8Mx36 8Mx36-bit HY5117400B HY514100A HYM536810DM HYM536810DMG 72-Pin PDF

    HYM532410BM

    Abstract: HY5117400B HYM532410B HYM532410BMG HYM532410
    Text: HYM532410B M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410B M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532410B 4Mx32 4Mx32-bit HY5117400B HYM532410BM HYM532410BMG 72-Pin HYM532410 PDF

    1CE13-10-DEC94

    Abstract: HY5117400A
    Text: HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted


    Original     		HYM532410A 4Mx32-bit 32-bit HY5117400A HYM532410AAM/ASLM/ATM/ASLTM HYM532410AMG/ASLMG/ATMG/ASLTMG 1CE13-10-DEC94 72pin 1CE13-10-DEC94 HY5117400A PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532810C 8Mx32 8Mx32-bit HY5117400C HYM532810CM HYM532810CMG 72-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: » « Y I I H D W I HYM532810A M-Series 8Mx32-blt CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SQJ or TSOPfl on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		HYM532810A 8Mx32-blt 32-bit HY5117400A HYM532810AM/ASLM/ATM/ASLTM HYM53281OAMG/ALMG/ATMG/ALTMG 72pin HYM53281OA/AL HYM532810AT/ALT PDF

    MAX7523

    Abstract: No abstract text available
    Text: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.


    OCR Scan     		HY5117400A, HY5116400A HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT HY5116400AJ Y5116400ASLJ HY5116400AT HY5116400ASLT MAX7523 PDF

    HY5116400BT

    Abstract: No abstract text available
    Text: -HYUNDAI • HY5117400B, HY5116400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		HY5117400B, HY5116400B A0-A11) HY5116400BT PDF