Untitled
Abstract: No abstract text available
Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others
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HY62QF16201A
128Kx16bit
LL/SL-pa6201A
HYQF621Ac
100ns
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PDF
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HY62SF16201A
Abstract: HY62SF16201A-I HY62UF16201A HY62UF16201A-I
Text: HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201A / HY62QF16201A / HY62EF16201A / HY62SF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The
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HY62UF16201A/
HY62QF16201A/
HY62EF16201A/
HY62SF16201A
128Kx16bit
HY62UF16201A
HY62QF16201A
HY62EF16201A
16bits.
HY62SF16201A-I
HY62UF16201A-I
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16201A uses high performance full CMOS process technology and is designed for high speed and
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Original
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HY62QF16201A
128Kx16bit
16bits.
48-FBGA
48ball
5M-1994.
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PDF
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BS62LV256-70
Abstract: M5M5408 BS62UV256-15 M5M5408B-55 t0808
Text: Package Descriptions PC / PI = PDIP SRAM CROSS REFERENCE 7700 Irvine Center Dr. STE: 420 SC / SI = SOP Irvine, CA 92618 Contact: TC / TI = TSOP Lena Patel STC / STI = STSOP BC / BI = BGA 8 x 10 email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277
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32Kx8
128Kx8
256Kx8
BS62XV256-25
BS62UV256-15
BS62LV256-70
BS62XV1024-25
BS62UV1024-15
BS62LV1024-70
BS62XV2000-25
BS62LV256-70
M5M5408
BS62UV256-15
M5M5408B-55
t0808
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62LF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 History Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information
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Original
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HY62LF16201A
128Kx16bit
HY62QF16201A
HY62LF16201A
o6201A
HYLF621Ac
100ns
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PDF
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TC554161A
Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA
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BH62UV4000
BH616UV4010
BH62UV8000
BH616UV8010
BH62UV1600
BH616UV1610
TC55V4000
TC55VEM208ASTN
T16LV8017
K6X8008T2B
TC554161A
HY62WT08081E
K6X8008C2B
CY62148E
r1lv0416
K6F1616
k6t0808c1d
BH616UV4010
BH616UV8010
BH62UV4000
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PDF
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TC55VEM416AXBN
Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA
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BH62UV4000
BH616UV4010
BH62UV8000
BH616UV8010
BH62UV1600
BH616UV1610
TC55V4000
TC55VEM208ASTN
T16LV8017
K6X8008T2B
TC55VEM416AXBN
K6F8016U6B
HY62WT08081E
K6X4008C1F
BH-Series
CY62147CV30
Hynix Cross Reference
samsung k6x1008c2d
CY62148E
TC55VEM216ABXN
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16201A Series 128K X 16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16201A uses high performance full CMOS process technology and is designed for high speed and
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OCR Scan
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HY62QF16201A
16bit
16bits.
48-FBGA
HYQF621AC
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PDF
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256Kx16bit
Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V
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OCR Scan
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GM76C256C
GM76V256C
GM76U256C
GM76C256CW
HY62CT08081E
HY62WT08081E
HY62K
T08081E
32Kx8-bit,
256Kx16bit
128KX16
HY628100B
512kx16bit
SRAM
SRAM 256kx16
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PDF
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FBGA 9 x 20
Abstract: HY62CT08081E hynix hy T0808
Text: Ordering Information Old Part No. System HY XX X XX X X X X X XX XX HYUNDAI HY XXX I TEMPERATURE BLANK : 0°C ~ 70°C E : -25°C - 85-C I : -40°C ~ 85°C : Memory Product PRODUCT GROUP 62 63 67 : Slow SRAM : Fast SRAM : Sync SRAM SPEED 80 10 12 15 17 20 25
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OCR Scan
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100ns
120ns
150ns
128KX
512Kx
256Kx
HY62UF16101C
HY62QF16101C
HY62SF16101C
HY62UF16201A
FBGA 9 x 20
HY62CT08081E
hynix hy
T0808
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PDF
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