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    256KX16BIT Search Results

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    HYUF6404D

    Abstract: HYUF6404
    Text: HY62UF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02


    Original     		PDF HY62UF16404D 256Kx16bit HYUF6404D HYUF6404D HYUF6404

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values


    Original     		PDF HY62UF16406C 256Kx16bit 16bits. HYUF6406C

    Untitled

    Abstract: No abstract text available
    Text: HY62LF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values


    Original     		PDF HY62LF16406C 256Kx16bit HYQF6406C

    VDR 0047

    Abstract: No abstract text available
    Text: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Dec.26.2001 Preliminary 0.1 Absolute Maximum Ratings - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V


    Original     		PDF HY62KF16403E 256Kx16bit 16bit HY62KF6403E HY62KF1ical 44pin 400mil VDR 0047

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16406E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002


    Original     		PDF HY62SF16406E 256Kx16bit HY62SF1S HYUF6406E

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02


    Original     		PDF HY62SF16404D 256Kx16bit HYSF6404D

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16401 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401 is a high speed, low power and 4M bit full CMOS SRAM organized as 262,144 words by 16bit. The HY62UF16401 uses high performance full CMOS process technology and designed for high speed low power circuit


    Original     		PDF HY62UF16401 256Kx16bit 16bit. 48ball 5M-1994.

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any


    Original     		PDF HY62QF16406D 256Kx16bit 16bits. HYQF6406D

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16404C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Jul.06.2000 Preliminary 01 Part No Change 100ns Part Delete Oct.30.2000


    Original     		PDF HY62QF16404C 256Kx16bit 100ns HYQF6404C

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16403A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16403A uses high performance full CMOS process technology and is designed for high speed and low power


    Original     		PDF HY62QF16403A 256Kx16bit 16bits. 48-ball 48ball 5M-1994.

    Untitled

    Abstract: No abstract text available
    Text: HY63V16400A 256Kx16bit CMOS FAST SRAM Preliminary DESCRIPTION FEATURES The HY63V16400A is a 4,194,304-bit high-speed SRAM organized as 262,144 words by 16 bits. The HY63V16400A uses sixteen common input and output lines and has an output enable pin which operates faster than address access time at


    Original     		PDF HY63V16400A 256Kx16bit HY63V16400A 304-bit 44pin 400mil

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16401A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16401A uses high performance full CMOS process technology and is designed for high speed and low power


    Original     		PDF HY62UF16401A 256Kx16bit 16bits. 48-ball 48ball 5M-1994.

    HY62SF16404E

    Abstract: HY62SF16404E-I
    Text: HY62SF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002


    Original     		PDF HY62SF16404E 256Kx16bit HY62SF1 HYSF6404E HY62SF16404E-I

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The


    Original     		PDF HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A 256Kx16bit HY62UF16400A HY62QF16400A HY62EF16400A 16bits.

    Untitled

    Abstract: No abstract text available
    Text: HY62LF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02


    Original     		PDF HY62LF16404D 256Kx16bit HYQF6404D

    hysf643

    Abstract: No abstract text available
    Text: HY62SF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 08 Icc1 Value change. 30mA -> 20mA Nov.22.2000 Final 09 Marking Information add tBLZ / tOLZ value is changed


    Original     		PDF HY62SF16403A 256Kx16bit HYSF643A 100ns 120ns hysf643

    CMOS 4091

    Abstract: No abstract text available
    Text: HY62SF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02


    Original     		PDF HY62SF16406D 256Kx16bit HYSF6406D CMOS 4091

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002


    Original     		PDF HY62SF16404E 256Kx16bit 4091Ohm 3273Ohm 3070Ohm 3150Ohm HYSF6404E

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention


    Original     		PDF HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 256Kx16bit HY62UF16400 HY62QF16400 HY62EF16400 16bits.

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16403A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16403A uses high performance full CMOS process technology and is designed for high speed and low power


    Original     		PDF HY62UF16403A 256Kx16bit 16bits. 48-ball 48ball 5M-1994.

    EM256J16B

    Abstract: EM256J16T
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM256J16 Preliminary EM256J16 256Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM256J16 is an integrated memory device


    Original     		PDF EM256J16 256Kx16bit EM256J16 EM256U16 EM256J16T EM256J16B EM256J16T

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The


    Original     		PDF HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A 256Kx16bit HY62UF16401A HY62QF16401A HY62EF16401A 16bits.

    Untitled

    Abstract: No abstract text available
    Text: HY62VF08401C Series 256Kx16bit full CMOS SRAM Document Title 512K x 8bit 3.0 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.18.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values


    Original     		PDF HY62VF08401C 256Kx16bit HY62UF08401C

    Untitled

    Abstract: No abstract text available
    Text: EDI8M16256C 35/45/55/70 Module The fu tu re . •■ A E>VAM C E OKIFOIF8MATDOM 256Kx16 SRAM CMOS, High Speed Module Features The EDI8M16256C is a 4096K 256Kx16bit High Speed Static RAM module constructed using sixteen EDI81256C (256Kx1) Static RAMs in ieadless chip


    OCR Scan     		PDF EDI8M16256C 256Kx16 EDI8M16256C 4096K 256Kx16bit) EDI81256C 256Kx1) EDI816H64C 1024K