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    120NS Search Results

    120NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C256-120DC Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    AM27C256-120DIB Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    AM27C256-120DI Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    X28C512EM-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32 Visit Rochester Electronics LLC Buy
    SF Impression Pixel

    120NS Price and Stock

    Anatech Electronics Inc AE120NS2142

    RF FILTER BANDSTOP 120MHZ MODULE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AE120NS2142 Box 100 1
    • 1 $549
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    Jensen Global JG120NS

    IT SERIES DISPENSING TIPS W/ AIR
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    DigiKey JG120NS Box 1
    • 1 $71.02
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    IDEC Corporation ABD120N-S

    PUSHBUTTON 30MM
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    DigiKey ABD120N-S Bulk
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    BEI Sensors 9902120NS

    HALL EFFECT ROTARY SENSOR
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    DigiKey 9902120NS Bag
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    BEI Sensors 9901120NS

    HALL EFFECT ROTARY SENSOR
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    DigiKey 9901120NS Bag
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    Find more 120NS price and stock on Findchips.com

    120NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XM28C010P

    Abstract: No abstract text available
    Text: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times


    Original     		PDF XM28C010P --150ns, 120ns, Size--64 XM28C010P

    M27V201

    Abstract: PDIP32 PLCC32 TSOP32
    Text: M27V201 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V


    Original     		PDF M27V201 256Kb 120ns FDIP32W PDIP32 M27V201 PDIP32 PLCC32 TSOP32

    MAX4189

    Abstract: MAX4189ESD MAX4190 TAJB106M010 MAX4188 RG3390
    Text: 19-1369; Rev 0; 7/98 MAX4188 Evaluation Kit _Features ♦ Fast Enable/Disable Times 120ns/35ns _Component List _Ordering Information DESIGNATION QTY DESCRIPTION C1, C4 2 10µF, 10V, 20% tantalum capacitors


    Original     		PDF MAX4188 120ns/35ns) TAJB106M010 293D106X0010B 70MHz MAX4188EVKIT 130MHz MAX4188/MAX4189 MAX4189 MAX4189ESD MAX4190 RG3390

    29F800T

    Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
    Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption


    Original     		PDF MX29F800T/B 1Mx8/512Kx16] 70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/08/2000 DEC/04/2000 FEB/12/2001 29F800T 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12

    MASK ROM 32M PROGRAM

    Abstract: K3N6C4000E-DC mask rom A2034
    Text: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)


    Original     		PDF K3N6C4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF 42-DIP-600 K3N6C4000E-DC MASK ROM 32M PROGRAM mask rom A2034

    Untitled

    Abstract: No abstract text available
    Text: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF


    Original     		PDF 1000E-D 16M-Bit /1Mx16) 100ns 120ns 100pF 1000E-DC 42-DIP-600

    A94-10

    Abstract: 4000E
    Text: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF 4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF A94-10 4000E

    555H

    Abstract: MX29F200B MX29F200T
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 555H MX29F200B MX29F200T

    29F080

    Abstract: 29f080-90 MX29F080 SA10 SA11 SA12 SA13 SA14
    Text: PRELIMINARY MX29F080 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • 1,048,576 x 8 byte mode only stuction Single power supply operation - 5.0V only operation for read, erase and program operation Fast access time: 70/90/120ns


    Original     		PDF MX29F080 1024K 70/90/120ns 64K-Byte AUG/10/2000 JUN/18/2001 PM0579 JAN/16/2002 29F080 29f080-90 MX29F080 SA10 SA11 SA12 SA13 SA14

    Untitled

    Abstract: No abstract text available
    Text: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF


    Original     		PDF 1000E-TC 16M-Bit /1Mx16) 100ns 120ns 100pF 44-TSOP2-400

    Untitled

    Abstract: No abstract text available
    Text: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF


    Original     		PDF 1000B-TC 64M-Bit /4Mx16) 100ns 120ns 100pF 44-TSOP2-400

    Untitled

    Abstract: No abstract text available
    Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900*  Weight FEATURES  Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical  Access Times of 70ns (SRAM) and 120ns (FLASH)


    Original     		PDF WSF128K16-XXX 128Kx16 WSF128K16-H1X WSF128K16-XG1UX1 120ns 66-pin, ICCx32

    Untitled

    Abstract: No abstract text available
    Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture


    Original     		PDF WSF512K16-XXX 512KX16 120ns ICCx16

    Untitled

    Abstract: No abstract text available
    Text: UM23C24100 1,572,864 X 16/3,145,728 X 8 BIT CMOS MASK ROM P R E L IM IN A R Y Features • 1,572,864 x 16/3,145,728 x 8-bit organization * Single +5V power supply * Access time: 120ns max. ■ Current: Operating: 60mA (max.) Standby: 50 <;A (max.) ■ Three-state outputs for wired-OR expansion


    OCR Scan     		PDF UM23C24100 120ns 42-pin 44-pin UM23C24100 100pF 015/A-1

    as3145

    Abstract: No abstract text available
    Text: UM23C24002 3,145,728 X 8 BIT CMOS MASK ROM PRELIM INARY Features • ■ ■ ■ ■ ■ ■ TTL-compatible inputs and outputs 3,145,728 x 8-bit organization Single +5V power supply Access time: 120ns max. Current: Operating: 60mA (max.) Three-state outputs for w ired-OR expansion


    OCR Scan     		PDF UM23C24002 120ns 36-pin UM23C24002 100pF as3145

    Untitled

    Abstract: No abstract text available
    Text: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.


    OCR Scan     		PDF 2SK2044 120ns) O-220FI 51193TH X-9260

    3A73

    Abstract: No abstract text available
    Text: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at


    OCR Scan     		PDF TC531024P/F 120ns 150ns, 600mil 40pin 525mil 3A73

    Untitled

    Abstract: No abstract text available
    Text: IDT7130SA/LA 1DT7140SA/LA CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) —Commercial: 20/25/30/35/45/55/70/90/100ns (max.) • Low-power operation


    OCR Scan     		PDF IDT7130SA/LA 1DT7140SA/LA 25/30/35/45/55/70/90/100/120ns 20/25/30/35/45/55/70/90/100ns IDT7130/IDT7140SA 325mW IDT7130/IDT7140LA IDT7130 16-or-more-bits

    32-TSOP2-400F

    Abstract: altl
    Text: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Ststic RAM Low VoltQge Operstion FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :3«W(Typ.) L-Version 1.5« W(Typ.) LL-Version


    OCR Scan     		PDF KM68V4000AL/AL-L 120ns 18mW/1MHz KM68V4000ALG/ALG-L 32-SOP-525 KM68V4000ALT/ALT-L 32-TSOP2-400F KM68V4000ALR/ALR-L 32-TSOP2-4COR KM68V4000AL/AL-L altl

    Untitled

    Abstract: No abstract text available
    Text: & 27C128 Microchip 128K 16K X 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C128 is a CMOS 128K • • • • — 120ns access tim e available CMOS Technology for low power consumption — 20mA Active current


    OCR Scan     		PDF 27C128 27C128 120ns 120ns. 11003H

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS XL28C64B E x txH o n ctin? 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F E A TU R ES • Fast Read A ccess T im es — 120ns, 150ns, 200ns and 250ns ■ Low C M O S P o w er C onsum ption


    OCR Scan     		PDF XL28C64B 150pA 120ns, 150ns, 200ns 250ns 120ns 100pF

    Untitled

    Abstract: No abstract text available
    Text: ELMO SEMIC OND UCTOR CORP M3E D • BSTQSbM QQDDÜS1 0 * E S C C PRELIMINARY T-Hb-\3-»'7 8 M egabit FLASH MEMORY Features: ♦ 1Mb x 8 Organization ♦ Access Time of 120ns ♦ Low Power Operation: Standby: 1mA Max. Operating: 50mA Max. ♦ 10,000 Erase/Program Cycles


    OCR Scan     		PDF 120ns 16sec. EM1024K8-M05 1024K

    Untitled

    Abstract: No abstract text available
    Text: '7 005120 F eatures 4 « n v-t'cA. Paged. C onfigurations w ith Page Reset on Pozuet—Up AT27C512 - Not Paged, 64K x B AT27C51S - 4 Pages. 16K x fl AT27CS1S - 2 Pages. S2K x 8 Low Power CMOS Operation 40mA max. Active a t SMHx 100y,A max. Stan dby F ast Read Access Time — 120ns


    OCR Scan     		PDF AT27C512 AT27C51S AT27CS1S 120ns 200mA 1FN41

    Untitled

    Abstract: No abstract text available
    Text: T T WPF29640-120GVI WHITE /MICROELECTRONICS 64M BYTE 4x4Mx32 FLASH (5VSupply;5V Program) SIMM MODULE A D VA N C ED * FEATURES • A ccess Tim e of 120ns ■ 10,000 E rase/Program Cycles Packaging: • B lock Erase/Program Lockout du ring Pow er T ra n sitio n s


    OCR Scan     		PDF WPF29640-120GVI 4x4Mx32) 120ns 28F320J5