Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    128KX16BIT Search Results

    128KX16BIT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY62UF16201A-I

    Abstract: HY62UF16201A
    Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


    Original
    HY62UF16201A 128Kx16bit HYUF621Ac 100ns HY62UF16201A-I PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


    Original
    HY62QF16201A 128Kx16bit LL/SL-pa6201A HYQF621Ac 100ns PDF

    SM-1994

    Abstract: No abstract text available
    Text: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The


    Original
    HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 128Kx16bit HY62UF16200 HY62QF16200 HY62EF16200 16bits. SM-1994 PDF

    SM-1994

    Abstract: No abstract text available
    Text: HY62UF16201 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201 is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62UF16201 uses high performance full CMOS process technology and designed for high speed low power circuit


    Original
    HY62UF16201 128Kx16bit 16bit. 48ball SM-1994. SM-1994 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any


    Original
    HY62LF16206B-DT12C 128Kx16bit HY62LF16206B 16bits. 120ns PDF

    HY62UF16201A

    Abstract: HY62UF16201A-I HY62UF16201AF HYUF621 REV08
    Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 07 08 History Draft Date Remark Divide output load into two factors Dec.10. 2000 Final - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW


    Original
    HY62UF16201A 128Kx16bit HY62UF16201AF1) HY62UF16201AF) HYUF621Ac 100ns HY62UF16201A-I HY62UF16201AF HYUF621 REV08 PDF

    HY62QF16200A

    Abstract: No abstract text available
    Text: HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200A / HY62QF16200A / HY62EF16200A / HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The


    Original
    HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A 128Kx16bit HY62UF16200A HY62QF16200A HY62EF16200A 16bits. PDF

    HY62SF16201A

    Abstract: HY62SF16201A-I HY62UF16201A HY62UF16201A-I
    Text: HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201A / HY62QF16201A / HY62EF16201A / HY62SF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The


    Original
    HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A 128Kx16bit HY62UF16201A HY62QF16201A HY62EF16201A 16bits. HY62SF16201A-I HY62UF16201A-I PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62LF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 History Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information


    Original
    HY62LF16201A 128Kx16bit HY62QF16201A HY62LF16201A o6201A HYLF621Ac 100ns PDF

    kor 2001

    Abstract: MARKING HYNIX Origin Country HYNIX Origin Country
    Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 07 History Draft Date Remark Divide output load into two factors Dec.10. 2000 Final - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW


    Original
    HY62UF16201A 128Kx16bit HY62UF16201AF1) HY62UF16201AF) HYUF621Ac 100ns kor 2001 MARKING HYNIX Origin Country HYNIX Origin Country PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


    Original
    HY62SF16201A 128Kx16bit HY62SF16201A 16bit. HY62SY62SF16201A HYSF621Ac 100ns 120ns PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16201A is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62SF16201A uses high performance full CMOS process technology and designed for high speed low


    Original
    HY62SF16201A 128Kx16bit 16bit. HY62SF16201A-I 48ball 5M-1994. PDF

    hynix hy

    Abstract: HY62LF16206A HY62LF16206A-LT12C 48-TSOP1 MARKING HYNIX MARKING HYNIX Origin Country 48TSOP1
    Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration


    Original
    HY62LF16206A-LT12C 128Kx16bit 48-TSOP1 120ns hynix hy HY62LF16206A HY62LF16206A-LT12C MARKING HYNIX MARKING HYNIX Origin Country 48TSOP1 PDF

    HY62SF16201A

    Abstract: HY62SF16201A-I
    Text: HY62SF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


    Original
    HY62SF16201A 128Kx16bit HY62SF16201A Y62SF16201A HYSF621Ac 100ns 120ns HY62SF16201A-I PDF

    MARKING HYNIX

    Abstract: MARKING HYNIX Origin Country
    Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration


    Original
    HY62LF16206A-LT12C 128Kx16bit 120ns MARKING HYNIX MARKING HYNIX Origin Country PDF

    MARKING HYNIX Origin Country

    Abstract: No abstract text available
    Text: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any


    Original
    HY62LF16206B-DT12C 128Kx16bit HY62LF16206B 16bits. 120ns MARKING HYNIX Origin Country PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16201A uses high performance full CMOS process technology and is designed for high speed and


    Original
    HY62QF16201A 128Kx16bit 16bits. 48-FBGA 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62UF16200A uses high performance full CMOS process technology and is designed for high speed and


    Original
    HY62UF16200A 128Kx16bit 16bits. 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62UF16201A uses high performance full CMOS process technology and is designed for high speed and


    Original
    HY62UF16201A 128Kx16bit 16bits. 48-FBGA HY62UF16201ACKAGE 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16200A uses high performance full CMOS process technology and is designed for high speed and


    Original
    HY62QF16200A 128Kx16bit 16bits. 48-FBGA 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: Y62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention • Standard pin configuration


    Original
    Y62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 128Kx16bit HY62UF16200 HY62QF16200 HY62EF16200 16bits. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62SF16200A uses high performance full CMOS process technology and is designed for high speed and


    Original
    HY62SF16200A 128Kx16bit 16bits. 48ball 5M-1994. PDF

    EM128J16B

    Abstract: EM128J16T
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128J16 Preliminary EM128J16 128Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128J16 is an integrated memory device


    Original
    EM128J16 128Kx16bit EM128J16 EM128U16 EM128J16T EM128J16B EM128J16T PDF

    DSP56F803

    Abstract: DSP56F80X 64Kx16-bit
    Text: BR1537/D Preliminary Information . APPLICATIONS: Steppers and Encoders Home Appliance Controls Integrated with Voice Control Smart Appliances Home Security Digital Telephone Answering Machine Engine Management Power Line Modem Servo Drives Automotive Control


    Original
    BR1537/D DSP56F80X 80MHz, DSP56F803 A0-A15 D0-D15 GS71116 DQ1-DQ16 DSP56F803 64Kx16-bit PDF