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    Toshiba America Electronic Components TC554161AFT-70L

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    Bristol Electronics TC554161AFT-70L 230
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    Quest Components TC554161AFT-70L 4
    • 1 $16.9
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    Win Source Electronics TC554161AFT-70L 12,300
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    • 100 $8.125
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    Toshiba America Electronic Components TC554161AFT-85L

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    Bristol Electronics TC554161AFT-85L 1
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    TC554161A Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC554161A Toshiba SRAM - Low Power Scan PDF
    TC554161AFT Toshiba 4m CMOS SRAM 256k x 16 Scan PDF
    TC554161AFT-10 Toshiba 262,144-word by 16-bit static RAM, 100ns Original PDF
    TC554161AFT-10 Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161AFT-10 Toshiba Scan PDF
    TC554161AFT-10L Toshiba 262,144-word by 16-bit static RAM, 100ns Original PDF
    TC554161AFT-10L Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161AFT-10L Toshiba Scan PDF
    TC554161AFT-10V Toshiba 262,144-word by 16-bit static RAM, 100ns Original PDF
    TC554161AFT-10V Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161AFT-10V Toshiba 262,144-word by 16-bit static RAM Scan PDF
    TC554161AFT-10V Toshiba Scan PDF
    TC554161AFT-70 Toshiba 262,144-word by 16-bit static RAM, 70ns Original PDF
    TC554161AFT-70 Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161AFT-70 Toshiba Scan PDF
    TC554161AFT-70L Toshiba 262,144-word by 16-bit static RAM, 70ns Original PDF
    TC554161AFT-70L Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161AFT-70L Toshiba Scan PDF
    TC554161AFT-70V Toshiba 262,144-word by 16-bit static RAM, 70ns Original PDF
    TC554161AFT-70V Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF

    TC554161A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC554161AFT

    Abstract: TC554161AFT-70
    Text: TC554161AFT-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10%


    Original     		TC554161AFT-70 144-WORD 16-BIT TC554161AFT 304-bit 16bits. PDF

    TC554161AFTI

    Abstract: TC554161AFTI-70
    Text: TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		TC554161AFTI-70 144-WORD 16-BIT TC554161AFTI 304-bit 16bits. PDF

    Untitled

    Abstract: No abstract text available
    Text: TC554161AFT-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5V


    Original     		TC554161AFT-70V 144-WORD 16-BIT TC554161AFT 304-bit 16bits. PDF

    TC554161AFT

    Abstract: TC554161AFT-70V
    Text: TC554161AFT-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5V


    Original     		TC554161AFT-70V 144-WORD 16-BIT TC554161AFT 304-bit 16bits. PDF

    TC554161AFT

    Abstract: TC554161AFT-70
    Text: TC554161AFT-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10%


    Original     		TC554161AFT-70 144-WORD 16-BIT TC554161AFT 304-bit 16bits. PDF

    Untitled

    Abstract: No abstract text available
    Text: TC554161AFT-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10%


    Original     		TC554161AFT-70 144-WORD 16-BIT TC554161AFT 304-bit 16bits. PDF

    Untitled

    Abstract: No abstract text available
    Text: TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		TC554161AFTI-70 144-WORD 16-BIT TC554161AFTI 304-bit 16bits. PDF

    TC554161AFT

    Abstract: TC554161AFT-70V
    Text: TC554161AFT-70V,-85V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5V


    Original     		TC554161AFT-70V 144-WORD 16-BIT TC554161AFT 304-bit 16bits. PDF

    TC554161AFTI

    Abstract: TC554161AFTI-70
    Text: TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		TC554161AFTI-70 144-WORD 16-BIT TC554161AFTI 304-bit 16bits. PDF

    HC49U-V

    Abstract: clrc632 antenna clrc632 firmware MAX232 smd MFAN700 RC632 CLRD701 USB Interface IC NXP SAB-C161U-LF antenna 13.56MHz clrc632
    Text: CLRM701 Mifare & ICODE contactless reader module Rev. 3.2 — 24 May 2007 Product data sheet 101432 PUBLIC 1. General description This document describes the functionality of the CLRM701 reader module. It includes the functional and electrical specifications and gives the needed details to use this reader


    Original     		CLRM701 CLRM701 CLRD701, CLRC632 CLRC632 HC49U-V clrc632 antenna clrc632 firmware MAX232 smd MFAN700 RC632 CLRD701 USB Interface IC NXP SAB-C161U-LF antenna 13.56MHz clrc632 PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


    Original     		Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620 PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    TC554161AFTI

    Abstract: AFTI-70
    Text: TO SH IBA TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		TC554161 AFTI-70 144-WORD 16-BIT TC554161AFTI 304-bit 54-P-400-0 62MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC554161 AFT-70V,-85V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


    OCR Scan     		TC554161 AFT-70V 144-WORD 16-BIT TC554161AFT 304-bit 54-P-400-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161AFT-70,-85,-10,-701-,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD B Y 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		TC554161AFT-70 144-WORD 16-BIT TC554161AFT 304-bit 54-P-400-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		144-WORD 16-BIT TC554161AFTI-70 TC554161AFTI 304-bit 54-P-400-0 62MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: H3S- TOSHIBA 4Mbit Static RAM TC554161AFT-V Data Sheet TO SHIBA TC554161 AFT-70Vf-85Vf-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2S2,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		TC554161AFT-V TC554161 AFT-70Vf-85Vf-1 144-WORD 16-BIT TC554161AFT 304-bit AFT-70V 54-P-400-0 PDF

    s3 86c* -toshiba

    Abstract: No abstract text available
    Text: H3S- TOSHIBA 4Mbit Static RAM TC554161AFTI/AFTI-L Data Sheet TOSHIBA TC554161AFTI-70t-85>-10,-70Lf-85L>-10L T O SH IBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 262,144-W O R D BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		TC554161AFTI/AFTI-L 16-BIT TC554161AFTI-70t-85> -70Lf-85L> TC554161AFTI 304-bit TC554161AFTI-70 62MAX s3 86c* -toshiba PDF

    pts70

    Abstract: No abstract text available
    Text: TOSHIBA TC554161AFT-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		TC554161AFT-70 144-WORD 16-BIT TC554161AFT 304-bit 54-P-400-0 62MAX pts70 PDF

    TC554161AFT

    Abstract: No abstract text available
    Text: TOSHIBA_TC554161 AFT-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		TC554161 AFT-70V 144-WORD 16-BIT TC554161AFT 304-bit enab11-25 PDF

    TC554161AFT

    Abstract: No abstract text available
    Text: TOSHIBA TC554161 AFT-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


    OCR Scan     		TC554161 AFT-70V 144-WORD 16-BIT TC554161AFT 304-bit 54-P-400-0 62MAX PDF

    TC554161AFT

    Abstract: TC554161AFT-70
    Text: T O S H IB A TC554161AFT-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		TC554161AFT-70 144-WORD 16-BIT TC554161AFT 304-bit 54-p-400-0 62MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161AFTI-70>-85>-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		TC554161AFTI-70> 144-WORD 16-BIT TC554161AFTI 304-bit TC554161 AFTI-70 54-P-400-0 62MAX PDF