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    FSX017 Price and Stock

    Fuji Electric Co Ltd FSX017LG

    MESFET Transistor, N-CHAN, SOT-173VAR
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    Quest Components FSX017LG 8
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    SUMITOMO ELECTRIC Interconnect Products FSX017LGT

    INSTOCK
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    Chip 1 Exchange FSX017LGT 818
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    FSX017 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSX017LG Eudyna Devices General Purpose GaAs FET Original PDF
    FSX017LG/001 Fujitsu GaAs FET Original PDF
    FSX017LG/001 Fujitsu FET Transistor: Packaged GaAs FET Original PDF
    FSX017LG/001-E1 Fujitsu FET Transistor: Packaged GaAs FET Original PDF
    FSX017LG-E1 Fujitsu FET: P Channel: ID 0.075 A Original PDF
    FSX017WF Fujitsu General Purpose GaAs FET Original PDF
    FSX017X Fujitsu GaAs FET & HEMT Chip Original PDF
    FSX017X/001 Fujitsu FET Transistor: Packaged GaAs FET Original PDF
    FSX017X/001 Fujitsu GaAs FET Original PDF
    FSX017X/001-E1 Fujitsu FET Transistor: Packaged GaAs FET Original PDF
    FSX017X-E1 Fujitsu FET: P Channel: ID 0.075 A Original PDF

    FSX017 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FSX017X

    Abstract: No abstract text available
    Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX017X FSX017X 12GHz. FCSI0598M200

    FSX017LG

    Abstract: fujitsu gaas fet
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. FCSI0598M200 fujitsu gaas fet

    FSX017WF

    Abstract: No abstract text available
    Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


    Original     		PDF FSX017WF FSX017WF 12GHz. FCSI0598M200

    fujitsu hemt

    Abstract: No abstract text available
    Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX017X FSX017X 12GHz. fujitsu hemt

    FSX017L

    Abstract: S12MAG Eudyna Devices X BAND power amplifiers
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. FSX017L S12MAG Eudyna Devices X BAND power amplifiers

    Untitled

    Abstract: No abstract text available
    Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


    Original     		PDF FSX017WF FSX017WF 12GHz.

    FSX017X

    Abstract: fujitsu hemt GaAs FET HEMT Chips
    Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX017X FSX017X 12GHz. FCSI0598M200 fujitsu hemt GaAs FET HEMT Chips

    GaAs FET HEMT Chips

    Abstract: 12GHz 8GHz oscillator FSX017X fsx017
    Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX017X FSX017X 12GHz. GaAs FET HEMT Chips 12GHz 8GHz oscillator fsx017

    EUDYNA

    Abstract: FSX017X/001 FSX017X
    Text: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high


    Original     		PDF FSX017LG/001 FSX017X/001 FSX017/001 FSX017LG/001 RATINGS4888 EUDYNA FSX017X/001 FSX017X

    FSX017X/001

    Abstract: bonder Fsx017LG fujitsu gaas fet
    Text: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high


    Original     		PDF FSX017LG/001 FSX017X/001 FSX017X/001 FSX017LG/001 FCSI0598M200 bonder Fsx017LG fujitsu gaas fet

    FSX017WF

    Abstract: FSX017
    Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


    Original     		PDF FSX017WF FSX017WF 12GHz. FSX017

    Untitled

    Abstract: No abstract text available
    Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX017X FSX017X 12GHz.

    Untitled

    Abstract: No abstract text available
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. FCSI0598M200

    NF 817

    Abstract: Eudyna Devices FSX017WF Eudyna Devices power amplifiers
    Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


    Original     		PDF FSX017WF FSX017WF 12GHz. NF 817 Eudyna Devices Eudyna Devices power amplifiers

    Eudyna Devices X BAND power amplifiers

    Abstract: FSX017LG Eudyna Devices
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. U4888 Eudyna Devices X BAND power amplifiers Eudyna Devices

    FSX017X

    Abstract: No abstract text available
    Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    Original     		PDF FSX017X FSX017X 12GHz.

    FSX017LG

    Abstract: FSX017
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. Uni73 FSX017

    fujitsu hemt

    Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips
    Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm Typ. @8.0GHz • High Power Gain: G-|dB=11dB(Typ.)@8.0GHz • Proven Reliability DESCRIPTION The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic


    OCR Scan     		PDF FSX017X FSX017X 12GHz. FCSI0598M200 fujitsu hemt fujitsu gaas fet GaAs FET HEMT Chips

    FLC301XP

    Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
    Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5


    OCR Scan     		PDF FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151

    FSXO17WF

    Abstract: FSX017WF 12QHz fujitsu gaas fet
    Text: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P-|<jB=21-5dB Typ. @8.0GHz High Power Gain: G-|dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


    OCR Scan     		PDF FSXO17WF FSX017WF 12GHz. FCSI0598M200 FSXO17WF 12QHz fujitsu gaas fet

    fujitsu x band amplifiers

    Abstract: FSX017LG Q1150 fujitsu gaas fet
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P-|dE3 = 16.0dBm Typ. @12.0GHz • High Power Gain: G ^ g = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    OCR Scan     		PDF FSX017L FSX017LG 12GHz. FCSI0598M200 fujitsu x band amplifiers Q1150 fujitsu gaas fet

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


    OCR Scan     		PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FSX017LG/001-E1

    Abstract: FSX017LG
    Text: FSXOl 7LG G en eral Purpose Ga As F E i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 220 mW Storage Temperature Tstg -65 to +175


    OCR Scan     		PDF 2000Q. FSX017LG/001-E1 FSX017LG