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    FLR106XV Search Results

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    cs 2648

    Abstract: FLR106XV
    Text: FLR 106X V fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • High Output Power: P-|dB = 29.0dBm Typ. • High Gain: G ^ b = 7.0dB(Typ.) • High PAE: riadd = 28%(Typ.) • Proven Reliability DESCRIPTION The FLR106XV chip is a power GaAs FET that is designed


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    PDF FLR106XV Condi50 cs 2648

    FLR106-XV

    Abstract: No abstract text available
    Text: FLR106XV G a À s F E T a n d H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Saturated Drain Current Symbol IDSS Test Conditions 480 720 mA - 200 - mS -1.0 -2.0 -3.5 V -4 - - V 28 29 - dBm 6.0 7.0 dB - 28 % - - Vos - 3V, IQS = 250mA


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    PDF FLR106XV 250mA 18GHz 10pcs. FLR106-XV

    FLR106XV

    Abstract: FLR106-XV fujitsu gaas fet k-band
    Text: FLR106XV Füjrrsu GaAs FET and HEMT Chips FEATURES • High Output Power: P-|<jB = 29.0dBm Typ. • High Gain: G ^ b = 7.0dB(Typ.) • High PAE: riadd = 28%(Typ.) • Proven Reliability DESCRIPTION The FLR106XV chip is a power GaAs FET that is designed for general purpose applications in the K-Band frequency


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    PDF FLR106XV Tempera150 FLR106XV FLR106-XV fujitsu gaas fet k-band

    FLC301XP

    Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
    Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5


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    PDF FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


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    FLC301XP

    Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
    Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X


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    PDF FLC081XP FLC151XP FLC301XP FSX017X FSX51X FSX52X FLX252XV FLK012XP FLK022XV* FLK052XV FLC301XP fsx52 FUJITSU MICROWAVE XP 215 FLK202 FSX51 FLC151