Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FSX51X Search Results

    FSX51X Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSX51X Unknown FET Data Book Scan PDF

    FSX51X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AuSn solder

    Abstract: fsx51x die-attach FSX51 AuSn
    Text: GaAs FET FHX35X/002 FSX51X/011 BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to prevent static build up by proper grounding of all equipment and per­ sonnel. All operations must be performed in a clean, dust-free and dry environment. 1. Storage Condition: Store in a clean, dry nitrogen environment.


    OCR Scan     		PDF FHX35X/002 FSX51X/011 FHX35X/002, FSX51X/011. AuSn solder fsx51x die-attach FSX51 AuSn

    FSX51

    Abstract: FSX51X
    Text: FSX51X/011 FSX51LG/001 DESCRIPTION The FSX51X/011 Chip and FSX51 LG/001 packaged devices are GaAs MESFETs suitable fo r use as the FET fro n t end o f an optical receiver in high speed lightwave com m unication systems. This N-channel 1.0 micron speed Schottky-Barrier gate FET combines high transconductance, low gate


    OCR Scan     		PDF FSX51X/01! FSX51LG/001 FSX51X/011 FSX51LG/001 FSX51X/011 FSX51 LG/001 FSX51X

    fsx51x

    Abstract: No abstract text available
    Text: FSX51X GaAs FET and HEMT Chips ELECTRICAL CHARACTERIST CS Am bient Temperature Ta=25°C Item Symbol Saturated Drain Current IDSS Condition Min. Limit Typ. Max. Unit Vos =3V, VGS =0V 30 60 120 mA Transconductance gm V d S = 3V, Id s =30mA 18 25 - mS Pinch-off Voltage


    OCR Scan     		PDF FSX51X fsx51x

    FLC301XP

    Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
    Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5


    OCR Scan     		PDF FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151

    FSX51

    Abstract: fujitsu gaas fet fsx51x S3V 05 S3V 03
    Text: FSX51X/011 FSX51LG/001 G aAs FET FEATURES • • • • • High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability APPLICATIONS The front end of an optical receiver in high speed application. DESCRIPTION The FSX51X/011 Chip and FSX51 LG/001 packaged devices are GaAs


    OCR Scan     		PDF FSX51X/011 FSX51LG/001 FSX51 LG/001 FSX51LG/00J 51X/01 fujitsu gaas fet fsx51x S3V 05 S3V 03

    FSC11LF

    Abstract: FSX52WF FSC10LF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021
    Text: - 140 - :1 f m g FSCIOLF it S ± ii FSCIOX FSC11FA/LG Ä ±ü§ ffl € fr & m ¡s 4 % 1 V* K V * fg "Æ Vg s * X * * (V) 1* (A) % m [ P d /P c h (max) * * m (A) Vg s (V) tt n (Ta=25'C) V g s (c ff) (min) (max) Vd s (V) (V) (V) I ds s (min) (max) V d s


    OCR Scan     		PDF FSC10LF 250ii FSC10X FSC11FA/LG FSC11LF 95nstyp FT6021 FT6021D 160nstyp FSX52WF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021

    fujitsu gaas fet

    Abstract: S3V 03 S3V 05 FSX51 FHX35 fsx51x
    Text: LIGHTWAVE COM PON EN TS & M OD ULES GaAs FETs and HEMTs FOR RECEIVER FRONT ENDS 9m mS •g s o Cgs CGD (nA) (PF) (PF) Part Number Notes V d S=3V VDS=3V lDS=10mA V d S=3V lDS=20mA V q S=-2V FHX35 LG/002 60 (V d S=2V) 10 0.47 0.035 Packaged HEMT FHX35X/002


    OCR Scan     		PDF FHX35 LG/002 FHX35X/002 FSX51 LG/001 FSX51X/011 fujitsu gaas fet S3V 03 S3V 05 fsx51x

    KS D 9502

    Abstract: FMM381CG FMM360 fmm362 fsx51x
    Text: LIGHTWAVE CO M PO N E N TS & MODULES “CG” PACKAGE PIN DESCRIPTION FMM311CG # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SYMBOL VSS DIN GND GND GND VSS T GND GND GND Mm k Mm k vss GND GND OUT GND V|B vss vss V|p vss vss VREF FUNCTION


    OCR Scan     		PDF FMM311CG 068nF FMM381CG KS D 9502 FMM381CG FMM360 fmm362 fsx51x

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLC301XP

    Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
    Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X


    OCR Scan     		PDF FLC081XP FLC151XP FLC301XP FSX017X FSX51X FSX52X FLX252XV FLK012XP FLK022XV* FLK052XV FLC301XP fsx52 FUJITSU MICROWAVE XP 215 FLK202 FSX51 FLC151