Untitled
Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
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fujitsu hemt
Abstract: FHX35X rm 702 627
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
Power4888
fujitsu hemt
rm 702 627
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FHX35LG
Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.
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FHX35X/002
FHX35LG/002
FHX35X/002
FHX35LG/002
FCSI0598M200
FHX35LG
FHX35
fujitsu hemt
fujitsu gaas fet
hemt low noise die
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GaAs FET HEMT Chips
Abstract: FHX35X high power FET transistor s-parameters transistor hemt fujitsu gaas fet fhx35x GaAs FETs FHX35
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
FCSI0598M200
GaAs FET HEMT Chips
high power FET transistor s-parameters
transistor hemt
fujitsu gaas fet fhx35x
GaAs FETs
FHX35
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GaAs FET HEMT Chips
Abstract: FHX35 FHX35X eudyna GaAs FET RF Transistor
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
Pow4888
GaAs FET HEMT Chips
FHX35
eudyna GaAs FET RF Transistor
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high frequency transistor ga as fet
Abstract: GaAs FET HEMT Chips fujitsu hemt
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
FCSI0598M200
high frequency transistor ga as fet
GaAs FET HEMT Chips
fujitsu hemt
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FHX35
Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.
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FHX35X/002
FHX35LG/002
FHX35X/002
FHX35LG/002
Co4888
FHX35
eudyna
FHX35LG
hemt low noise die
fujitsu gaas fet
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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AuSn solder
Abstract: fsx51x die-attach FSX51 AuSn
Text: GaAs FET FHX35X/002 FSX51X/011 BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to prevent static build up by proper grounding of all equipment and per sonnel. All operations must be performed in a clean, dust-free and dry environment. 1. Storage Condition: Store in a clean, dry nitrogen environment.
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FHX35X/002
FSX51X/011
FHX35X/002,
FSX51X/011.
AuSn solder
fsx51x
die-attach
FSX51
AuSn
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fujitsu gaas fet
Abstract: S3V 03 S3V 05 FSX51 FHX35 fsx51x
Text: LIGHTWAVE COM PON EN TS & M OD ULES GaAs FETs and HEMTs FOR RECEIVER FRONT ENDS 9m mS •g s o Cgs CGD (nA) (PF) (PF) Part Number Notes V d S=3V VDS=3V lDS=10mA V d S=3V lDS=20mA V q S=-2V FHX35 LG/002 60 (V d S=2V) 10 0.47 0.035 Packaged HEMT FHX35X/002
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FHX35
LG/002
FHX35X/002
FSX51
LG/001
FSX51X/011
fujitsu gaas fet
S3V 03
S3V 05
fsx51x
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FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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fujitsu hemt
Abstract: FHX35LG low noise hemt transistor LOW HEMT
Text: FHX35X/002 FHX35LG/002 Low Noise H EM T FEATURES • • • • • High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability APPLICATIONS The front end of an optical receiver in high speed application. DESCRIPTION
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FHX35X/002
FHX35LG/002
FHX35LG/002
35LG/002
35X/0
HX35LGI002
fujitsu hemt
FHX35LG
low noise hemt transistor
LOW HEMT
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Untitled
Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips ELECTRICAL C H A R A C T E R ISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions Min. Limit Typ. Max. Unit VDS =2V, V q s = OV 15 40 85 mA Transconductance 9m VDS = 2V, Id s = 10mA 40
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FHX35X
-10fiA
12GHz
10pcs.
FHX35X
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Untitled
Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @ f=12G Hz High Associated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX35X is a High Electron M obility Transistor(H EM T) intended
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FHX35X
FHX35X
2-18G
FCSI0598M200
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FHX34X
Abstract: FHX13x
Text: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics Ta = 25 C NF TYP. (dB) Gas TYP. (dB) f (GHz) Vd s m (mA) FHX04X 0.75 10.5 12 2 10 FHXQ5X 0.9 10.5 12 2 10 FHX06X 1.1 10.5 12 2 10 FHX13X 0.45 13.0 12 2 10 FHX14X 0.55 13.0 12 2 10
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FHX04X
FHX06X
FHX13X
FHX14X
FHX34X
FHX35X
FHX45X
FHR02X
FHR20X
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FLC081XP
Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A
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FHX05X
FHX06FA/LG
FHX06X
FHX15FAAG
FHX35LG
27dBin
FLC253MH-8
FLC301MG-8
FLC311MG-4
FLK012WF
FLC081XP
FLC253MH-6
FLC091WF
FLC053WG
FLC103WG
FLK022WG
FLK012WF
FLK052WG
FHX15FA
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fld3c2pj
Abstract: FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG
Text: LIGHTWAVE COMPONENTS & M ODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ) If = Pf Pth (mW) (mW) CW (min.) CW dF=lth) CW at Pf VDR=5V - 0.2 9* en •> 3.0 (lp=600 mA) o o o o
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14-pin
4001EH
4002EH
4004EK
622Mb/s
4005EK
fld3c2pj
FSX51
FLD5F6CX
FMM362HE
Fujitsu FLD5F6CX
FLD148G3NL
FRM5W231DR
382CG
single frequency laser 1550 butterfly
FMM381CG
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