FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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FLC301XP
Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X
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FLC081XP
FLC151XP
FLC301XP
FSX017X
FSX51X
FSX52X
FLX252XV
FLK012XP
FLK022XV*
FLK052XV
FLC301XP
fsx52
FUJITSU MICROWAVE
XP 215
FLK202
FSX51
FLC151
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fujitsu gaas fet
Abstract: FLC151xp FLC151 FUJITSU MICROWAVE
Text: FLC151XP fujÏtsu GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-i ^ b = 31.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Reliability - ^ — & Drain- Drain
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FLC151XP
FLC151XP
fujitsu gaas fet
FLC151
FUJITSU MICROWAVE
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Untitled
Abstract: No abstract text available
Text: FLC151XP Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 31.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Reliability DESCRIPTION The FLC151XP chip is a power GaAs FET that is designed for
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FLC151XP
FLC151XP
25\xm
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749 305 5v
Abstract: FLC151XP FLC151
Text: FLC151XP GaAs EE1 and HEMT Chips ELECTRICAL C H A R A C T ER ISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions VDS =5V, V g s = 0V Min. Limit Typ. Max. Unit - 600 900 mA Transconductance 9m V d s = 5V, IQS = 400mA
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FLC151XP
400mA
10pcs.
749 305 5v
FLC151XP
FLC151
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FLC081XP
Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A
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FHX05X
FHX06FA/LG
FHX06X
FHX15FAAG
FHX35LG
27dBin
FLC253MH-8
FLC301MG-8
FLC311MG-4
FLK012WF
FLC081XP
FLC253MH-6
FLC091WF
FLC053WG
FLC103WG
FLK022WG
FLK012WF
FLK052WG
FHX15FA
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