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    FLK202 Search Results

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    FLK202 Price and Stock

    Phoenix Contact FLK 20/2FLK14/EZ-DR/ 50/KO

    Round cable set; connection 1: IDC/FLK socket strip (1x 20-position); connection 2: IDC/FLK socket strip (2x 14-position); cable length: 0.5 m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com FLK 20/2FLK14/EZ-DR/ 50/KO
    • 1 $94.02
    • 10 $79.42
    • 100 $74.02
    • 1000 $72.91
    • 10000 $72.91
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    Master Electronics FLK 20/2FLK14/EZ-DR/ 50/KO
    • 1 $94.02
    • 10 $79.42
    • 100 $74.02
    • 1000 $72.91
    • 10000 $72.91
    		Buy Now

    Phoenix Contact FLK 20/2FLK14/EZ-DR/500/KO

    Round cable set; connection 1: IDC/FLK socket strip (1x 20-position); connection 2: IDC/FLK socket strip (2x 14-position); cable length: 5 m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com FLK 20/2FLK14/EZ-DR/500/KO
    • 1 $157.86
    • 10 $146.97
    • 100 $143.01
    • 1000 $143.01
    • 10000 $143.01
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    Master Electronics FLK 20/2FLK14/EZ-DR/500/KO
    • 1 $157.86
    • 10 $146.97
    • 100 $143.01
    • 1000 $143.01
    • 10000 $143.01
    		Buy Now

    Phoenix Contact FLK 20/2FLK14/EZ-DR/200/KO

    Cable Assembly 2m 26AWG 20 POS Socket to 2(14 POS Socket) SKT-SKT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com FLK 20/2FLK14/EZ-DR/200/KO
    • 1 $129.32
    • 10 $107.71
    • 100 $101.81
    • 1000 $100.28
    • 10000 $100.28
    		Buy Now
    Master Electronics FLK 20/2FLK14/EZ-DR/200/KO
    • 1 $129.32
    • 10 $107.71
    • 100 $101.81
    • 1000 $100.28
    • 10000 $100.28
    		Buy Now

    Phoenix Contact FLK 20/2FLK14/EZ-DR/100/KO

    Round cable set; connection 1: IDC/FLK socket strip (1x 20-position); connection 2: IDC/FLK socket strip (2x 14-position); cable length: 1 m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com FLK 20/2FLK14/EZ-DR/100/KO
    • 1 $112.9
    • 10 $95.37
    • 100 $88.89
    • 1000 $87.55
    • 10000 $87.55
    		Buy Now
    Master Electronics FLK 20/2FLK14/EZ-DR/100/KO
    • 1 $112.9
    • 10 $95.37
    • 100 $88.89
    • 1000 $87.55
    • 10000 $87.55
    		Buy Now

    Phoenix Contact FLK 20/2FLK14/EZ-DR/400/KO

    Round cable set; connection 1: IDC/FLK socket strip (1x 20-position); connection 2: IDC/FLK socket strip (2x 14-position); cable length: 4 m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com FLK 20/2FLK14/EZ-DR/400/KO
    • 1 $153.37
    • 10 $127.74
    • 100 $118.93
    • 1000 $118.93
    • 10000 $118.93
    		Buy Now
    Master Electronics FLK 20/2FLK14/EZ-DR/400/KO
    • 1 $153.37
    • 10 $127.74
    • 100 $118.93
    • 1000 $118.93
    • 10000 $118.93
    		Buy Now
    Find more FLK202 price and stock on Findchips.com

    FLK202 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLK202MH-14 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLK202MH-14 Unknown FET Data Book Scan PDF
    FLK202XV Unknown FET Data Book Scan PDF

    FLK202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FLK202MH14 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)15 V(BR)GSS (V) I(D) Max. (A)800m P(D) Max. (W)10 Maximum Operating Temp (øC) I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.


    Original     		PDF FLK202MH14

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		PDF 99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet

    FLK202

    Abstract: No abstract text available
    Text: FLK202XV GaAs F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions 800 1200 mA - 400 - mS -1.0 -2.0 -3.5 V -5 - - V 31.5 32.5 - dBm 5 6 - dB - 27 - % V d s = 5V, Id s = 500mA


    OCR Scan     		PDF FLK202XV 500mA 10pcs. FLK202

    FLL101ME

    Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
    Text: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)


    OCR Scan     		PDF FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C

    FLC301XP

    Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
    Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5


    OCR Scan     		PDF FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FLC301XP Flr016xp fsx51x FLC151XP FLC151

    FLK202XV

    Abstract: No abstract text available
    Text: FLK202XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G -j^B = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability DESCRIPTION The FLK202XV chip is a pow er GaAs FET that is designed


    OCR Scan     		PDF FLK202XV FLK202XV

    Untitled

    Abstract: No abstract text available
    Text: FLK202MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLK202M H-14 is a pow er GaAs FET that is designed for general


    OCR Scan     		PDF FLK202MH-14 FLK202M

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


    OCR Scan     		PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202

    CD 8227

    Abstract: FLK202 FLK202MH-14 FLK202MH14 ta 8227 k AM 128.2 PT 1132
    Text: FLK 202 M H -I4 X - k u B a n d P o w e r iciA s I L i s ABSOLUTE MAXIMUM RATING (Am bient Temperature Ta=25°C . • 11 1 111 1 1 -M Mil. Ill . . . III, II III i mill I. 1,11, III.I im i.y Gate-Source Voltage 1. . . i j . . 1 m u


    OCR Scan     		PDF

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLC301XP

    Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
    Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X


    OCR Scan     		PDF FLC081XP FLC151XP FLC301XP FSX017X FSX51X FSX52X FLX252XV FLK012XP FLK022XV* FLK052XV FLC301XP fsx52 FUJITSU MICROWAVE XP 215 FLK202 FSX51 FLC151

    IC 4468

    Abstract: No abstract text available
    Text: F LK 202M H -14 f u j Tt s u X-Ku Band Power GaAs FETs FEATURES • High Output Power: P-|dB = 32.5dB m Typ. • High Gain: G ^ b = 6.0dB (Typ.) • High PAE: riadd = 27% (Typ.) • Proven Reliability • Herm etic M etal/C eram ic Package DESCRIPTION Th e F L K 2 0 2 M H -1 4 is a power G aAs F E T that is designed for general


    OCR Scan     		PDF FLK202M IC 4468

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK