eudyna GaAs FET RF Transistor
Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
eudyna GaAs FET RF Transistor
high frequency transistor ga as fet
transistor on 4959
eudyna fet
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Untitled
Abstract: No abstract text available
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
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FHX45X
Abstract: high power FET transistor s-parameters high frequency transistor ga as fet S2101 fujitsu hemt
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
high power FET transistor s-parameters
high frequency transistor ga as fet
S2101
fujitsu hemt
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FHX45X
Abstract: GaAs FET HEMT Chips GaAs FET chip
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
GaAs FET HEMT Chips
GaAs FET chip
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Untitled
Abstract: No abstract text available
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
FCSI0598M200
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fujitsu hemt
Abstract: TM 1628 FHX45X high power FET transistor s-parameters GaAs FET HEMT Chips
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor
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FHX45X
12GHz
FHX45X
2-18GHz
FCSI0598M200
fujitsu hemt
TM 1628
high power FET transistor s-parameters
GaAs FET HEMT Chips
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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Untitled
Abstract: No abstract text available
Text: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability
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FHX45X
12GHz
FHX45X
2-18GHz
FCSI0598M200
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CQ 828
Abstract: No abstract text available
Text: FHX45X GaAs F E I and H E M T Chips ELECTRICAL CHARACTERISTICS Ambien Temperature Ta=25° C Item Symbol Saturated Drain Current Condition ID SS Min. Limit Typ. Max. Unit VDS = 2V, V q s =0V 10 40 85 mA = 2v , id s =io v 45 65 - mS Transconductance gm vds
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FHX45X
12GHz
10pcs.
CQ 828
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FHX34X
Abstract: FHX13x
Text: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics Ta = 25 C NF TYP. (dB) Gas TYP. (dB) f (GHz) Vd s m (mA) FHX04X 0.75 10.5 12 2 10 FHXQ5X 0.9 10.5 12 2 10 FHX06X 1.1 10.5 12 2 10 FHX13X 0.45 13.0 12 2 10 FHX14X 0.55 13.0 12 2 10
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FHX04X
FHX06X
FHX13X
FHX14X
FHX34X
FHX35X
FHX45X
FHR02X
FHR20X
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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