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    FLL120MK Price and Stock

    SUMITOMO ELECTRIC Interconnect Products FLL120MK

    TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FLL120MK 1
    • 1 $76.05
    • 10 $76.05
    • 100 $76.05
    • 1000 $76.05
    • 10000 $76.05
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    Sumitomo Electric Device Innovations Usa FLL120MK

    Transistors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian FLL120MK 199
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    FUJITSU Semiconductor Limited FLL120MK

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLL120MK 270
    • 1 $116.0714
    • 10 $100.5952
    • 100 $100.5952
    • 1000 $100.5952
    • 10000 $100.5952
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    FLL120MK Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL120MK Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLL120MK-E1 Fujitsu FET: P Channel: ID 6 A Original PDF

    FLL120MK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FLL120

    Abstract: No abstract text available
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK FCSI0598M200 FLL120 PDF

    L-Band

    Abstract: No abstract text available
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK L-Band PDF

    FLL120mk

    Abstract: No abstract text available
    Text: FLL120MK L-Bcuid Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING A m bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 37.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature


    OCR Scan     		FLL120MK Volt939 FLL120mk PDF

    FLL120MK

    Abstract: 100OB FLL120 fujitsu gaas fet
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 40.0dBm Typ. High Gain: = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120M K is a Power G aAs FET that is specifically designed to


    OCR Scan     		FLL120MK FLL120MK FCSI0598M200 100OB FLL120 fujitsu gaas fet PDF

    fll120mk

    Abstract: FLL120
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK FLL120 PDF

    Untitled

    Abstract: No abstract text available
    Text: F L L120M K fU ÎIT S U L-Band Medium & High Power GaAs FETs * FEATURES • • • • • High Output Power: P-idg = 40.0dBm Typ. High Gain: G-j^B = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    OCR Scan     		L120M FLL120MK 2200mA LL120M PDF

    fll120mk

    Abstract: No abstract text available
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK FCSI0598M200 PDF

    FLL120MK

    Abstract: Eudyna Devices
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK Eudyna Devices PDF

    FLL120MK

    Abstract: FLL120 fujitsu gaas fet
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		FLL120MK FLL120MK FCSI0598M200 FLL120 fujitsu gaas fet PDF

    Avago 9886

    Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
    Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8


    Original     		com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes PDF

    FLL55

    Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
    Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.


    OCR Scan     		FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK PDF