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    M53241 Search Results

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    M53241 Price and Stock

    Samsung Semiconductor KMM5324104BK-6U

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KMM5324104BK-6U 4
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    Amphenol Corporation IM532415421

    COAX CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus IM532415421 143 Weeks 1
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    M53241 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SA MS UN G E L E C T R O N I C S b7E D INC T T b M l H S D D 1 5 2 4 4 b31 • SMÛK ■ KM M53241OOV/VG/VP DRAM MODULES 4 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5324100V is a 4M bit x 32 Dynamic


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    M53241OOV/VG/VP KMM5324100V 24-pin 72-pin 22/jF 110ns KMM5324100V-7 130ns KMM5324100V-8 PDF

    M53241

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte X M53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung M5324100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The


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    KMM53241OOAK/AKG 4Mx32 KMM5324100AK 24-pin 72-pin 5324100AK M5324100AK KM44C4100AK M53241 PDF

    FZK101

    Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
    Text: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974


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    Grou19 CN127-128-638 ZN220-320. CN131-132-642. ZN221-321. CN133-134-644. ZN248-348. CN135-136-646 ZN222-322. CN121-122-682. FZK101 FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001 PDF

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 PDF

    KMM5324100V

    Abstract: No abstract text available
    Text: M53241OOV/VG/VP DRAM MODULES 4M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5324100V is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung M5324100V consist of eight C M O S 4M x 4 bit


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    KMM53241OOV/VG/VP 110ns 130ns 150ns KMM5324100V 24-pin 72-pin 22/iF PDF