MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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Si4450DY
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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On semiconductor date Code sot-223
Abstract: BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions
Text: BCP56 BCP56 C B C E SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCP56
OT-223
On semiconductor date Code sot-223
BCP56
CBVK741B019
F63TNR
F852
PN2222A
pcb thermal sot-223 4 layer
sot-223 package dimensions
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CBVK741B019
Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
Text: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide
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FDS6814
CBVK741B019
F63TNR
F852
FDS6814
FDS9953A
L86Z
AA MARKING CODE SO8
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SI9955DY
Abstract: fairchild NDS 1182
Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9955DY
fairchild NDS
1182
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Untitled
Abstract: No abstract text available
Text: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.
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FDS3690
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Untitled
Abstract: No abstract text available
Text: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V
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FDS2670
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Untitled
Abstract: No abstract text available
Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4420DY
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Untitled
Abstract: No abstract text available
Text: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9945DY
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FDR835N
Abstract: 831N
Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDR6678A
FDR835N
831N
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Untitled
Abstract: No abstract text available
Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4412DY
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2539a
Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
Text: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate
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FDS5670
FDS5670
2539a
IC TRACE CODE ON BOX LABEL INFORMATION
AA MARKING CODE SO8
marking code ng Fairchild
TRACE CODE ON BOX PACKING LABEL
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Untitled
Abstract: No abstract text available
Text: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4936DY
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Untitled
Abstract: No abstract text available
Text: FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDT434P
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F852 transistor
Abstract: No abstract text available
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
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FDT439N
F852 transistor
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Untitled
Abstract: No abstract text available
Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
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FD8305N
FDR8305N
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Untitled
Abstract: No abstract text available
Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si4953DY
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AA MARKING CODE SO8
Abstract: No abstract text available
Text: FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6680S
FDS6680S
FDS6680
AA MARKING CODE SO8
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CBVK741B019
Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z
Text: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.
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FDS2570
CBVK741B019
F011
F63TNR
F852
FDS2570
FDS9953A
L86Z
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c3 SOT-223
Abstract: CBVK741B019 F63TNR F852 NDT452P PN2222A
Text: September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features -3A, -30V. RDS ON = 0.18Ω @ VGS = -10V. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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NDT452P
c3 SOT-223
CBVK741B019
F63TNR
F852
NDT452P
PN2222A
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FDS9953A
Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
Text: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS9953A
FDS9953A
9953A
CBVK741B019
F011
F63TNR
F852
L86Z
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F63TNR
Abstract: FDFS2P102A soic-8 33a
Text: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P102A
F63TNR
FDFS2P102A
soic-8 33a
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FDS6688
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56
Text: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6688
FDS6688
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
rca tube 56
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FDS9945
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDS9945
FDS9945
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
86 diode
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