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    SI4420DY Price and Stock

    Infineon Technologies AG SI4420DY

    MOSFET N-CH 30V 12.5A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4420DY Tube 95
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    onsemi SI4420DY

    MOSFET N-CH 30V 12.5A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4420DY Reel 2,500
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    Infineon Technologies AG SI4420DYTR

    MOSFET N-CH 30V 12.5A 8SO
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    DigiKey SI4420DYTR Reel 4,000
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    Win Source Electronics SI4420DYTR 3,470
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    Infineon Technologies AG SI4420DYPBF

    MOSFET N-CH 30V 12.5A 8SO
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    DigiKey SI4420DYPBF Tube
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    Win Source Electronics SI4420DYPBF 3,720
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    • 100 $2.174
    • 1000 $1.884
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    NXP Semiconductors SI4420DY,518

    MOSFET N-CH 30V SOT96-1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4420DY,518 Reel
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    Find more SI4420DY price and stock on Findchips.com

    SI4420DY Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4420DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    Si4420DY Fairchild Semiconductor Single N-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4420DY International Rectifier HEXFET Power MOSFET Original PDF
    Si4420DY Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
    SI4420DY Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    Si4420DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4420DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si4420DY Vishay Telefunken Si4420BDY vs. Si4420DY Comparison Original PDF
    SI4420DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Single, Pkg Style SO-8 Scan PDF
    SI4420DY,518 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12.5A SOT96-1 Original PDF
    SI4420DY_NL Fairchild Semiconductor 30V N-Channel PowerTrench MOSFET Original PDF
    SI4420DYPBF International Rectifier Original PDF
    Si4420DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI4420DYTR International Rectifier 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    SI4420DYTRPBF International Rectifier Original PDF

    SI4420DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4420DY

    fairchild NDS

    Abstract: marking w66
    Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4420DY fairchild NDS marking w66

    Si4420DY

    Abstract: No abstract text available
    Text: Si4420DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4420DY S-49457--Rev. 17-Dec-96

    Si4420DY-T1

    Abstract: Si4420DY-T1-E3 SI4420BDY-T1-E3 Si4420DY Si4420BDY V5042
    Text: Specification Comparison Vishay Siliconix Si4420BDY vs. Si4420DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3 Si4420BDY-T1-E3 Replaces Si4420DY-T1 Summary of Performance:


    Original     		PDF Si4420BDY Si4420DY Si4420BDY-T1-E3 Si4420DY-T1-E3 Si4420DY-T1 V5042

    Si4420DY-T1-E3

    Abstract: Si4420BDY Si4420BDY-T1-E3 Si4420DY Si4420DY-T1
    Text: Specification Comparison Vishay Siliconix Si4420BDY vs. Si4420DY Description: N-Channel, 30 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3 Si4420BDY-T1-E3 Replaces Si4420DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4420BDY Si4420DY Si4420BDY-T1-E3 Si4420DY-T1-E3 Si4420DY-T1 08-Nov-06

    Si4420DY

    Abstract: power mosfet so8 FL
    Text: PD - 93835 Si4420DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.009Ω T o p V ie w Description This N-channel HEXFET® power MOSFET is produced


    Original     		PDF Si4420DY 800mW power mosfet so8 FL

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4420DY S-56945--Rev. 23-Nov-98

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4420DY 08-Apr-05

    Si4420DY

    Abstract: No abstract text available
    Text: Si4420DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 13.5 0.013 @ VGS = 4.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4420DY S-20215--Rev. 01-Apr-02

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4420DY

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4420DY

    Si4420DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4420DY 09-May-02

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 13.5 0.013 @ VGS = 4.5 V 11 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4420DY


    Original     		PDF Si4420DY Si4420DY-T1 S-31990--Rev. 13-Oct-03

    Untitled

    Abstract: No abstract text available
    Text: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 13.5 0.013 @ VGS = 4.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4420DY Si4420DY-T1 (with Tape and Reel)


    Original     		PDF Si4420DY Si4420DY-T1 S-31062--Rev. 26-May-03

    transistor BP 109

    Abstract: Si4420DY
    Text: Si4420DY N-channel enhancement mode field-effect transistor Rev. 01 — 28 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4420DY in SOT96-1 SO8 .


    Original     		PDF Si4420DY M3D315 OT96-1 OT96-1, transistor BP 109

    ta2aa

    Abstract: Si4420DY DSA009900
    Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4420DY ta2aa DSA009900

    Si4420DY

    Abstract: No abstract text available
    Text: Si4420DY N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4420DY S-49457--Rev. 17-Dec-96

    Si4420DY

    Abstract: w8 mosfet
    Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4420DY w8 mosfet

    Si4420DY

    Abstract: No abstract text available
    Text: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(ON) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4420DY S-56945--Rev. 23-Nov-98

    Si4420DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4420DY 18-Jul-08

    Si4420DY

    Abstract: No abstract text available
    Text: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "12.5 0.013 @ VGS = 4.5 V "10.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4420DY 18-Jul-08

    51519

    Abstract: 14468 AN609 Si4420DY
    Text: Si4420DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4420DY AN609 31-Aug-05 51519 14468

    Si4420DY-T1

    Abstract: Si4420DY SI4420DY-T
    Text: Si4420DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 13.5 0.013 @ VGS = 4.5 V 11 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4420DY


    Original     		PDF Si4420DY Si4420DY-T1 18-Jul-08 SI4420DY-T

    Untitled

    Abstract: No abstract text available
    Text: PD - 95729 Si4420DYPbF HEXFET Power MOSFET l l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G A A D VDSS = 30V D D RDS on = 0.009Ω D Top View Description This N-channel HEXFET® power MOSFET is produced


    Original     		PDF Si4420DYPbF 800mW EIA-481 EIA-541.