MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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MPSA65
Abstract: MMBTA65 MPSA64 PZTA65
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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Original
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PDF
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
MPSA65
MMBTA65
PZTA65
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MPSA65
Abstract: MPS-A65 MMBTA65 MPSA64 PZTA65
Text: MPSA65 MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
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Original
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PDF
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MPSA65
MMBTA65
PZTA65
OT-23
OT-223
MPSA64
MPSA65
MMBTA65
MPS-A65
PZTA65
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Untitled
Abstract: No abstract text available
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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Original
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PDF
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MPSA65
MMBTA65
PZTA65
MPSA65
MMBTA65
OT-23
OT-223
MPSA64
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Untitled
Abstract: No abstract text available
Text: C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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Original
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PDF
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OT-23
OT-223
MPSA64
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BTA65
Abstract: PSA65
Text: E E M C O N O U C TO R m MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS
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MPSA65
MMBTA65
PZTA65
MPSA65
MMBTA65
PSA64
BTA65
PSA65
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FAIRCHILD SOT-223 MARK
Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
Text: fv* '€2 CZ> T O R MMBTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / MMBTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.
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OCR Scan
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PDF
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MPSA65
MMBTA65
OT-23
PZTA65
OT-223
MPSA64
FAIRCHILD SOT-223 MARK
MMBTA65
MPSA65
PZTA65
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Untitled
Abstract: No abstract text available
Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings
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OCR Scan
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PDF
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MPSA65
MMBTA65
PZTA65
MPSA64
MPSA65
MMBTA65
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