FDR835N Search Results

FDR835N

Abstract: 831N
Contextual Info: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

F852 transistor

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

Contextual Info: 1 9 9 9 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2 .5 V specified M O SFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

CBVK741B019

Abstract: F63TNR F852 FDR835N NDH8321C
Contextual Info: January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

CBVK741B019

Abstract: F63TNR F852 FDR8305N FDR835N
Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

CBVK741B019

Abstract: F63TNR F852 NDH8520C 28A-600 diode tnr
Contextual Info: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

CBVK741B019

Abstract: F63TNR F852 FDR835N NDH831N
Contextual Info: July 1996 NDH831N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Single P-Channel, Logic Level, PowerTrench MOSFET

Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
Contextual Info: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

FDS6680S

Abstract: CBVK741B019 F011 F63TNR F852 FDS6690A FDS6690S FDS6984S L86Z
Contextual Info: FDS6984S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages

F63TNR

Abstract: F852 D84Z CBVK741B019 FDR835N 831N
Contextual Info: SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate

CBVK741B019

Abstract: F63TNR F852 FDR835N
Contextual Info: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate

CBVK741B019

Abstract: F63TNR F852 FDR6678A FDR835N
Contextual Info: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

F63TNR

Abstract: F852 FDR856P SOIC-16
Contextual Info: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

CBVK741B019

Abstract: F63TNR F852 FDR835N NDH8301N
Contextual Info: December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

858P

Abstract: F63TNR FDR858P SOIC-16
Contextual Info: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little

FDR835N

Abstract: CBVK741B019 F63TNR F852 FDR6580 831N
Contextual Info: FDR6580 N-Chennal 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior

CBVK741B019

Abstract: F63TNR F852 FDR6678A FDR835N
Contextual Info: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

F852

Abstract: F63TNR FDR840P fd840 00416
Contextual Info: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

F63TNR

Abstract: F852 FDR840P FDR840P840P
Contextual Info: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

Contextual Info: FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited

8521L

Contextual Info: FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to

F852 transistor

Abstract: F852 espec CBVK741B019 F63TNR FDR835N
Contextual Info: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SSOT-8 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

Contextual Info: August 1998 PRELIMINARY FDR8321L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS ON = 0.070 Ω VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 Ω. This device is designed for configuration as a load