Si4450DY
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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Si4450DY
Abstract: No abstract text available
Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4450DY
S-49534--Rev.
06-Oct-97
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Si4450DY-T1
Abstract: Si4450DY
Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 7.5 0.03 @ VGS = 6.0 V 6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4450DY Si4450DY-T1 (with Tape and Reel)
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Si4450DY
Si4450DY-T1
08-Apr-05
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Si4450DY
Abstract: No abstract text available
Text: Si4450DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
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Si4450DY
Abstract: No abstract text available
Text: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
S-47958--Rev.
15-Apr-96
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Si4450DY
Abstract: No abstract text available
Text: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
S-47958--Rev.
15-Apr-96
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PDF
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Si4450DY
Abstract: No abstract text available
Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
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Si4450DY
Abstract: No abstract text available
Text: SPICE Device Model Si4450DY Vishay Siliconix N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4450DY
17-Apr-01
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Si4450DY
Abstract: S-49534 vishaysiliconix
Text: Si4450DY Siliconix N-Channel 60-V D-S Rated MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(ON) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4450DY
S-49534--Rev.
06-Oct-97
S-49534
vishaysiliconix
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Si4450DY
Abstract: Si4450DY-T1
Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 7.5 0.03 @ VGS = 6.0 V 6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4450DY Si4450DY-T1 (with Tape and Reel)
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Si4450DY
Si4450DY-T1
S-03951--Rev.
26-May-03
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Si4450DY
Abstract: Si4450DY-T1-E3
Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D
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Si4450DY
Si4450DY-T1-E3
Si4450DY-T1-GE3
11-Mar-11
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SI4450DYT1E3
Abstract: No abstract text available
Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D
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Si4450DY
Si4450DY-T1-E3
Si4450DY-T1-GE3
11-Mar-11
SI4450DYT1E3
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SI4450DY-T1
Abstract: SI4450DY
Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 7.5 0.03 @ VGS = 6.0 V 6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4450DY Si4450DY-T1 (with Tape and Reel)
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Si4450DY
Si4450DY-T1
18-Jul-08
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PDF
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Si4450DY
Abstract: No abstract text available
Text: SPICE Device Model Si4450DY Vishay Siliconix N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4450DY
18-Jul-08
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Si4450DY
Abstract: No abstract text available
Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D
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Si4450DY
Si4450DY-T1-E3
Si4450DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Si4450DY
Abstract: No abstract text available
Text: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
S-47958--Rev.
15-Apr-96
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Untitled
Abstract: No abstract text available
Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D
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Si4450DY
Si4450DY-T1-E3
Si4450DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si4450DY
Abstract: sv31
Text: SPICE Device Model Si4450DY N-Channel Enhancement-Mode MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
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Si4450DY
sv31
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Untitled
Abstract: No abstract text available
Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4450DY
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S-49534
Abstract: Si4450DY
Text: Si4450DY N-Channel 60-V D-S Rated MOSFET Product Summary VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
S-49534--Rev.
06-Oct-97
S-49534
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SI4450DY-T1-E3
Abstract: Si4450DY SI4450DYT1E3 SI4450DY-T1-GE3
Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D
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Si4450DY
Si4450DY-T1-E3
Si4450DY-T1-GE3
18-Jul-08
SI4450DYT1E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SI4450DY Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)7.5 I(DM) Max. (A) Pulsed I(D)5.5 @Temp (øC)70’ IDM Max (@25øC Amb)50 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-55
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SI4450DY
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S-49534
Abstract: Si4450DY
Text: Si4450DY N-Channel 60-V D-S Rated MOSFET Product Summary VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4450DY
S-49534--Rev.
06-Oct-97
S-49534
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Untitled
Abstract: No abstract text available
Text: LT1738 Slew Rate Controlled Ultralow Noise DC/DC Controller U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1738 is a switching regulator controller designed to lower conducted and radiated electromagnetic interference EMI . Ultralow noise and EMI are achieved by
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LT1738
LT1738
LT176X
150mA
OT-23
O-220
LT1777
LTC1922-1
LT3439
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