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    831N Search Results

    831N Result Highlights (5)

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    RJE5818831N1 Amphenol Communications Solutions Modular Jack - 8P8C, RA, Cat5e, THT, Standard Profile, Single Port, Shield With Top EMI Tabs Only, With LEDs Visit Amphenol Communications Solutions
    51939-831NSPLF Amphenol Communications Solutions PwrBlade®, Power Connectors, 20S Right Angle Header, Press Fit Visit Amphenol Communications Solutions
    10136656-0831NLF Amphenol Communications Solutions Minitek® Pwr 3.0, Single Row, Vertical Through Hole Header, 15u\\ Gold (Tin on Tails) plating, 8 Positions, Natural Color, GW Compatible LCP, Tray packing. Visit Amphenol Communications Solutions
    RJE4818831N1 Amphenol Communications Solutions Modular Jack - 8P8C, Right Angle, Cat5e, THT, Low Profile, Single Port, Shield With Top EMI Tabs Only, With LEDs Visit Amphenol Communications Solutions
    RJE5918831N1 Amphenol Communications Solutions Modular Jack - 8P8C, RA, Cat6, THT, Standard Profile, Single Port, Shield With Top EMI Tabs Only, With LEDs Visit Amphenol Communications Solutions
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    831N Price and Stock

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    Pulse Electronics Corporation PE-53831NL

    FIXED IND 53UH 1.87A 130 MOHM TH
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    DigiKey PE-53831NL Tube 556 1
    • 1 $3.48
    • 10 $2.865
    • 100 $2.46033
    • 1000 $2.05237
    • 10000 $1.87687
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    Mouser Electronics PE-53831NL 747
    • 1 $3.48
    • 10 $2.47
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    • 1000 $1.95
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    Newark PE-53831NL Bulk 810 65
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    • 1000 $2.24
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    Bristol Electronics PE-53831NL 152
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    Avnet Abacus PE-53831NL 19 Weeks 840
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    Chip-Germany GmbH PE-53831NL 780
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    IBS Electronics PE-53831NL 810 30
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    Master Electronics PE-53831NL
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    • 1000 $1.9
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    Sager PE-53831NL 30
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    • 100 $2.18
    • 1000 $1.9
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    RAF Electronic Hardware 1248-31-N

    5/8 RD X 1/4 X .315 ID
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    DigiKey 1248-31-N Bulk 275 1
    • 1 $2.01
    • 10 $1.592
    • 100 $1.306
    • 1000 $1.10888
    • 10000 $1.10888
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    RS 1248-31-N Bulk 9 Weeks 116
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    Bisco Industries 1248-31-N 141
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    Master Electronics 1248-31-N
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    Air Electro Inc M83723-72R1831N

    M83723/72R1831N
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    DigiKey M83723-72R1831N Bag 149 2
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    • 10 $98.319
    • 100 $83.2176
    • 1000 $76.5602
    • 10000 $76.5602
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    Amphenol Aerospace M8372376R1831N

    BAYONET, STANDARD STRAIGHT PLUG
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    DigiKey M8372376R1831N Box 98 1
    • 1 $84.3
    • 10 $77.088
    • 100 $77.088
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    Amphenol Aerospace M8372372W1831N

    M83723/72W1831N3ALUMINUM
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    DigiKey M8372372W1831N Box 72 1
    • 1 $57.96
    • 10 $49.267
    • 100 $45.9734
    • 1000 $45.9734
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    831N Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    CBVK741B019

    Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
    Text: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide


    Original     		FDS6814 CBVK741B019 F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.


    Original     		FDS3690 PDF

    FDR835N

    Abstract: 831N
    Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDR6678A FDR835N 831N PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si4936DY PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9435A PDF

    F852 transistor

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N F852 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original     		FD8305N FDR8305N PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		Si4953DY PDF

    CBVK741B019

    Abstract: F63TNR F852 FDR835N NDH8321C
    Text: January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDH8321C CBVK741B019 F63TNR F852 FDR835N NDH8321C PDF

    CBVK741B019

    Abstract: F63TNR F852 FDR8305N FDR835N
    Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original     		FDR8305N CBVK741B019 F63TNR F852 FDR8305N FDR835N PDF

    7w66

    Abstract: Si4435DY D665
    Text: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si4435DY 7w66 D665 PDF

    d7566

    Abstract: No abstract text available
    Text: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		FDS6675 OT-23 d7566 PDF

    CBVK741B019

    Abstract: F63TNR F852 NDH8520C 28A-600 diode tnr
    Text: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDH8520C CBVK741B019 F63TNR F852 NDH8520C 28A-600 diode tnr PDF

    CBVK741B019

    Abstract: F63TNR F852 FDR835N NDH831N
    Text: July 1996 831N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDH831N CBVK741B019 F63TNR F852 FDR835N NDH831N PDF

    FDS6680S

    Abstract: CBVK741B019 F011 F63TNR F852 FDS6690A FDS6690S FDS6984S L86Z
    Text: FDS6984S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages


    Original     		FDS6984S FDS6984S FDS6680S CBVK741B019 F011 F63TNR F852 FDS6690A FDS6690S L86Z PDF

    F63TNR

    Abstract: F852 D84Z CBVK741B019 FDR835N 831N
    Text: SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate


    Original     		F63TNR 330cm 177cm F852 D84Z CBVK741B019 FDR835N 831N PDF

    CBVK741B019

    Abstract: F63TNR F852 FDR835N
    Text: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate


    Original     		F63TNR 330cm 177cm CBVK741B019 F852 FDR835N PDF

    CBVK741B019

    Abstract: F63TNR F852 FDR6678A FDR835N
    Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		FDR6678A CBVK741B019 F63TNR F852 FDR6678A FDR835N PDF

    F63TNR

    Abstract: F852 FDR856P SOIC-16
    Text: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		FDR856P OT-23 F63TNR F852 FDR856P SOIC-16 PDF

    CBVK741B019

    Abstract: F63TNR F852 FDR8521L FDR835N FDR8521
    Text: FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to


    Original     		FDR8521L CBVK741B019 F63TNR F852 FDR8521L FDR835N FDR8521 PDF

    CBVK741B019

    Abstract: F63TNR F852 FDR835N NDH8301N
    Text: December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDH8301N CBVK741B019 F63TNR F852 FDR835N NDH8301N PDF

    Untitled

    Abstract: No abstract text available
    Text: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		FDS6675 OT-23 PDF

    FAIRCHILD soic MARKING

    Abstract: No abstract text available
    Text: FDS3590 80V N-Channel PowerTrenchTM MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 6.5 A, 80 V. RDS ON = 0.037 Ω


    Original     		FDS3590 FAIRCHILD soic MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS6375 Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		FDS6375 PDF