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    831N Search Results

    831N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJE5818831N1 Amphenol Communications Solutions Modular Jack - 8P8C, RA, Cat5e, THT, Standard Profile, Single Port, Shield With Top EMI Tabs Only, With LEDs Visit Amphenol Communications Solutions
    51939-831NSPLF Amphenol Communications Solutions PwrBlade®, Power Connectors, 20S Right Angle Header, Press Fit Visit Amphenol Communications Solutions
    10136656-0831NLF Amphenol Communications Solutions Minitek® Pwr 3.0, Single Row, Vertical Through Hole Header, 15u\\ Gold (Tin on Tails) plating, 8 Positions, Natural Color, GW Compatible LCP, Tray packing. Visit Amphenol Communications Solutions
    RJE4818831N1 Amphenol Communications Solutions Modular Jack - 8P8C, Right Angle, Cat5e, THT, Low Profile, Single Port, Shield With Top EMI Tabs Only, With LEDs Visit Amphenol Communications Solutions
    RJE5918831N1 Amphenol Communications Solutions Modular Jack - 8P8C, RA, Cat6, THT, Standard Profile, Single Port, Shield With Top EMI Tabs Only, With LEDs Visit Amphenol Communications Solutions
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    831N Price and Stock

    Pulse Electronics Corporation PE-53831NL

    FIXED IND 53UH 1.87A 130 MOHM TH
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    DigiKey PE-53831NL Tube 854 1
    • 1 $4.17
    • 10 $3.488
    • 100 $2.72967
    • 1000 $2.35061
    • 10000 $2.12312
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    Bristol Electronics PE-53831NL 152
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    Avnet Abacus PE-53831NL 21 Weeks 840
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    Chip1Stop PE-53831NL 213
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    • 100 $1.897
    • 1000 $1.817
    • 10000 $1.817
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    IBS Electronics PE-53831NL 810 273
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    • 1000 $3.185
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    Master Electronics PE-53831NL
    • 1 -
    • 10 $2.76
    • 100 $2.42
    • 1000 $2.1
    • 10000 $2.1
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    Sager PE-53831NL 840
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    • 1000 $1.98
    • 10000 $1.98
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    RAF Electronic Hardware 1248-31-N

    5/8 RD X 1/4 X .315 ID
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    DigiKey 1248-31-N Bulk 275 1
    • 1 $1.57
    • 10 $1.57
    • 100 $0.9238
    • 1000 $0.9238
    • 10000 $0.9238
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    RS 1248-31-N Bulk 9 Weeks 116
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    Bisco Industries 1248-31-N 141
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    DB Roberts 1248-31-N
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    Master Electronics 1248-31-N
    • 1 $1.672
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    • 100 $1.672
    • 1000 $1.39
    • 10000 $1.27
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    PEI Genesis M83723-75W1831N-LC

    AE8 31C 31#20 SKT PLUG
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    DigiKey M83723-75W1831N-LC Box 131 1
    • 1 $77.76
    • 10 $67.4
    • 100 $46.66
    • 1000 $46.66
    • 10000 $46.66
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    Amphenol Aerospace M8372376R1831N

    BAYONET, STANDARD STRAIGHT PLUG
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    DigiKey M8372376R1831N Box 98 1
    • 1 $122.17
    • 10 $95.206
    • 100 $75.7419
    • 1000 $75.7419
    • 10000 $75.7419
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    Amphenol Aerospace M8372372W1831N

    M83723/72W1831N3ALUMINUM
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    DigiKey M8372372W1831N Box 73 1
    • 1 $83.79
    • 10 $65.114
    • 100 $51.6077
    • 1000 $51.6077
    • 10000 $51.6077
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    Find more 831N price and stock on Findchips.com

    831N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CBVK741B019

    Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
    Text: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide


    Original     		PDF FDS6814 CBVK741B019 F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8

    Untitled

    Abstract: No abstract text available
    Text: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.


    Original     		PDF FDS3690

    FDR835N

    Abstract: 831N
    Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDR6678A FDR835N 831N

    Untitled

    Abstract: No abstract text available
    Text: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4936DY

    Untitled

    Abstract: No abstract text available
    Text: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9435A

    F852 transistor

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF FDT439N F852 transistor

    Untitled

    Abstract: No abstract text available
    Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original     		PDF FD8305N FDR8305N

    Untitled

    Abstract: No abstract text available
    Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		PDF Si4953DY

    CBVK741B019

    Abstract: F63TNR F852 FDR835N NDH8321C
    Text: January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDH8321C CBVK741B019 F63TNR F852 FDR835N NDH8321C

    CBVK741B019

    Abstract: F63TNR F852 FDR8305N FDR835N
    Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original     		PDF FDR8305N CBVK741B019 F63TNR F852 FDR8305N FDR835N

    7w66

    Abstract: Si4435DY D665
    Text: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4435DY 7w66 D665

    d7566

    Abstract: No abstract text available
    Text: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		PDF FDS6675 OT-23 d7566

    CBVK741B019

    Abstract: F63TNR F852 NDH8520C 28A-600 diode tnr
    Text: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDH8520C CBVK741B019 F63TNR F852 NDH8520C 28A-600 diode tnr

    CBVK741B019

    Abstract: F63TNR F852 FDR835N NDH831N
    Text: July 1996 831N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDH831N CBVK741B019 F63TNR F852 FDR835N NDH831N

    FDS6680S

    Abstract: CBVK741B019 F011 F63TNR F852 FDS6690A FDS6690S FDS6984S L86Z
    Text: FDS6984S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages


    Original     		PDF FDS6984S FDS6984S FDS6680S CBVK741B019 F011 F63TNR F852 FDS6690A FDS6690S L86Z

    F63TNR

    Abstract: F852 D84Z CBVK741B019 FDR835N 831N
    Text: SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate


    Original     		PDF F63TNR 330cm 177cm F852 D84Z CBVK741B019 FDR835N 831N

    CBVK741B019

    Abstract: F63TNR F852 FDR835N
    Text: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate


    Original     		PDF F63TNR 330cm 177cm CBVK741B019 F852 FDR835N

    CBVK741B019

    Abstract: F63TNR F852 FDR6678A FDR835N
    Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDR6678A CBVK741B019 F63TNR F852 FDR6678A FDR835N

    F63TNR

    Abstract: F852 FDR856P SOIC-16
    Text: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDR856P OT-23 F63TNR F852 FDR856P SOIC-16

    CBVK741B019

    Abstract: F63TNR F852 FDR8521L FDR835N FDR8521
    Text: FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to


    Original     		PDF FDR8521L CBVK741B019 F63TNR F852 FDR8521L FDR835N FDR8521

    CBVK741B019

    Abstract: F63TNR F852 FDR835N NDH8301N
    Text: December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDH8301N CBVK741B019 F63TNR F852 FDR835N NDH8301N

    Untitled

    Abstract: No abstract text available
    Text: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		PDF FDS6675 OT-23

    FAIRCHILD soic MARKING

    Abstract: No abstract text available
    Text: FDS3590 80V N-Channel PowerTrenchTM MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 6.5 A, 80 V. RDS ON = 0.037 Ω


    Original     		PDF FDS3590 FAIRCHILD soic MARKING

    Untitled

    Abstract: No abstract text available
    Text: FDS6375 Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF FDS6375