MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
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MPSA65
Abstract: MMBTA65 MPSA64 PZTA65
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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MMBTA65
PZTA65
OT-23
OT-223
MPSA64
MPSA65
MMBTA65
PZTA65
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MPSA65
Abstract: MPS-A65 MMBTA65 MPSA64 PZTA65
Text: MPSA65 MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
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MPSA65
MMBTA65
PZTA65
OT-23
OT-223
MPSA64
MPSA65
MMBTA65
MPS-A65
PZTA65
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Untitled
Abstract: No abstract text available
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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Original
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MPSA65
MMBTA65
PZTA65
MPSA65
MMBTA65
OT-23
OT-223
MPSA64
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PDF
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Untitled
Abstract: No abstract text available
Text: C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
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Original
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OT-23
OT-223
MPSA64
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PDF
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BTA65
Abstract: PSA65
Text: E E M C O N O U C TO R m MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS
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MPSA65
MMBTA65
PZTA65
MPSA65
MMBTA65
PSA64
BTA65
PSA65
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FAIRCHILD SOT-223 MARK
Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
Text: fv* '€2 CZ> T O R MMBTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / MMBTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.
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OCR Scan
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MPSA65
MMBTA65
OT-23
PZTA65
OT-223
MPSA64
FAIRCHILD SOT-223 MARK
MMBTA65
MPSA65
PZTA65
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Untitled
Abstract: No abstract text available
Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings
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OCR Scan
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MPSA65
MMBTA65
PZTA65
MPSA64
MPSA65
MMBTA65
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Untitled
Abstract: No abstract text available
Text: M AXIM U M RATINGS Symbol MMBTA65 MMBTA56 VCEO -6 0 -8 0 Vdc Collector-Base Voltage v CBO -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -4 .0 Vdc 'c - 500 m Adc Rating Collector-Emitter Voltage Collector Current — Continuous Unit MMBTA55LT1 MMBTA56LT1* CASE 318-07, STYLE 6
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OCR Scan
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MMBTA65
MMBTA56
MMBTA55LT1
MMBTA56LT1*
OT-23
O-236AB)
OT-23
BTA55
BTA56
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MMBTA5551
Abstract: EM401 MMBTA6520 MMBFJ174 MMBTA5401 j y w sot23 MMBTH918 smd diode 01C sot-23/BC327 SOT yo
Text: edi ELECTRONIC DEVICES, INC. 21 GRAY O AK S AVENUE • Y O NK ERS, N E W YORK 10710 3 1 4 - 9 6 5 - 4 - 4 0 0 • 1- 5 0 0 - 6"7B - O B 2 B . FA X 9 1 4 - 9 6 5 - 5 5 3 1 E -M A IL : E D I - S A L E S @ I N T E R N E T M C I .C O M SURFACE MOUNT DEVICES TRANSISTORS
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OT-23
MMBT2222A
MMBT3904
MMBT4401
MMBT2369
MMBT5089
MMBTA06
MMBTA42
MMBTA5551
MMBTA6517
EM401
MMBTA6520
MMBFJ174
MMBTA5401
j y w sot23
MMBTH918
smd diode 01C
sot-23/BC327 SOT yo
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ssot-6
Abstract: MMBT pnp FJ sot23 sot 223 fairchild
Text: Discrete Power and Signal Technologies Fairchild S em iconductor Selection Guides Surface Mount Bipolar Transistors G eneral Purpose A m p lifie rs and S w itches Part lc mA BV Min Number - Min M ax P ackage mA NPN I MMBT100 45 500 100 MMBT3904 40 200 ܧ
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MMBT100
MMBT3904
MMBT2222A
MMBT4401
MMBTA05
PZT2222A
PZT3904
NMT2222A
OT-23
ssot-6
MMBT pnp
FJ sot23
sot 223 fairchild
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